JP2019054070A5 - - Google Patents

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Publication number
JP2019054070A5
JP2019054070A5 JP2017176263A JP2017176263A JP2019054070A5 JP 2019054070 A5 JP2019054070 A5 JP 2019054070A5 JP 2017176263 A JP2017176263 A JP 2017176263A JP 2017176263 A JP2017176263 A JP 2017176263A JP 2019054070 A5 JP2019054070 A5 JP 2019054070A5
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JP
Japan
Prior art keywords
region
trench
conductivity type
semiconductor device
insulating film
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Application number
JP2017176263A
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English (en)
Japanese (ja)
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JP2019054070A (ja
JP6736531B2 (ja
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Priority to JP2017176263A priority Critical patent/JP6736531B2/ja
Priority claimed from JP2017176263A external-priority patent/JP6736531B2/ja
Priority to CN201810181594.9A priority patent/CN109509789B/zh
Priority to US15/912,600 priority patent/US10418470B2/en
Publication of JP2019054070A publication Critical patent/JP2019054070A/ja
Publication of JP2019054070A5 publication Critical patent/JP2019054070A5/ja
Application granted granted Critical
Publication of JP6736531B2 publication Critical patent/JP6736531B2/ja
Active legal-status Critical Current
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JP2017176263A 2017-09-14 2017-09-14 半導体装置 Active JP6736531B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2017176263A JP6736531B2 (ja) 2017-09-14 2017-09-14 半導体装置
CN201810181594.9A CN109509789B (zh) 2017-09-14 2018-03-06 半导体装置
US15/912,600 US10418470B2 (en) 2017-09-14 2018-03-06 Semiconductor device having IGBT portion and diode portion

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017176263A JP6736531B2 (ja) 2017-09-14 2017-09-14 半導体装置

Publications (3)

Publication Number Publication Date
JP2019054070A JP2019054070A (ja) 2019-04-04
JP2019054070A5 true JP2019054070A5 (enExample) 2019-09-19
JP6736531B2 JP6736531B2 (ja) 2020-08-05

Family

ID=65631494

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017176263A Active JP6736531B2 (ja) 2017-09-14 2017-09-14 半導体装置

Country Status (3)

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US (1) US10418470B2 (enExample)
JP (1) JP6736531B2 (enExample)
CN (1) CN109509789B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7061983B2 (ja) * 2019-04-26 2022-05-02 三菱電機株式会社 半導体装置
EP3748851B1 (en) * 2019-06-07 2023-03-15 Infineon Technologies AG Semiconductor device and semiconductor arrangement comprising semiconductor devices
DE102019133030B4 (de) * 2019-12-04 2023-05-04 Infineon Technologies Austria Ag Bipolartransistor mit isoliertem gate enthaltende halbleitervorrichtung und herstellungsverfahren
DE102019135545A1 (de) * 2019-12-20 2021-06-24 Infineon Technologies Ag Leistungshalbleitervorrichtung
CN111211167B (zh) * 2020-01-09 2022-04-01 杭州电子科技大学 一种消除负阻效应的rc-igbt器件结构
JP7198236B2 (ja) * 2020-03-13 2022-12-28 株式会社東芝 半導体装置
JP7488778B2 (ja) 2021-01-29 2024-05-22 株式会社東芝 半導体装置
JP7614959B2 (ja) 2021-07-01 2025-01-16 株式会社東芝 半導体装置及び半導体モジュール
JP7770122B2 (ja) * 2021-07-05 2025-11-14 三菱電機株式会社 半導体装置
US12469815B2 (en) * 2022-08-10 2025-11-11 Kabushiki Kaisha Toshiba Semiconductor package

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JP5206541B2 (ja) * 2008-04-01 2013-06-12 株式会社デンソー 半導体装置およびその製造方法
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DE102016115801B4 (de) * 2016-08-25 2020-10-29 Infineon Technologies Ag Transistorbauelement mit hoher stromfestigkeit
DE102016125879B3 (de) * 2016-12-29 2018-06-21 Infineon Technologies Ag Halbleitervorrichtung mit einer IGBT-Region und einer nicht schaltbaren Diodenregion
JP6652515B2 (ja) * 2017-02-09 2020-02-26 株式会社東芝 半導体装置
US10439038B2 (en) * 2017-02-09 2019-10-08 Kabushiki Kaisha Toshiba Semiconductor device and electrical apparatus
JP6891560B2 (ja) * 2017-03-15 2021-06-18 富士電機株式会社 半導体装置
JP2018160594A (ja) * 2017-03-23 2018-10-11 株式会社東芝 半導体装置
JP2018182254A (ja) * 2017-04-21 2018-11-15 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US10026728B1 (en) * 2017-04-26 2018-07-17 Semiconductor Components Industries, Llc Semiconductor device having biasing structure for self-isolating buried layer and method therefor
JP7143575B2 (ja) * 2017-07-18 2022-09-29 富士電機株式会社 半導体装置

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