JP2019054070A5 - - Google Patents

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Publication number
JP2019054070A5
JP2019054070A5 JP2017176263A JP2017176263A JP2019054070A5 JP 2019054070 A5 JP2019054070 A5 JP 2019054070A5 JP 2017176263 A JP2017176263 A JP 2017176263A JP 2017176263 A JP2017176263 A JP 2017176263A JP 2019054070 A5 JP2019054070 A5 JP 2019054070A5
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JP
Japan
Prior art keywords
region
trench
conductivity type
semiconductor device
insulating film
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Application number
JP2017176263A
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English (en)
Japanese (ja)
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JP2019054070A (ja
JP6736531B2 (ja
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Priority to JP2017176263A priority Critical patent/JP6736531B2/ja
Priority claimed from JP2017176263A external-priority patent/JP6736531B2/ja
Priority to US15/912,600 priority patent/US10418470B2/en
Priority to CN201810181594.9A priority patent/CN109509789B/zh
Publication of JP2019054070A publication Critical patent/JP2019054070A/ja
Publication of JP2019054070A5 publication Critical patent/JP2019054070A5/ja
Application granted granted Critical
Publication of JP6736531B2 publication Critical patent/JP6736531B2/ja
Active legal-status Critical Current
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JP2017176263A 2017-09-14 2017-09-14 半導体装置 Active JP6736531B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2017176263A JP6736531B2 (ja) 2017-09-14 2017-09-14 半導体装置
US15/912,600 US10418470B2 (en) 2017-09-14 2018-03-06 Semiconductor device having IGBT portion and diode portion
CN201810181594.9A CN109509789B (zh) 2017-09-14 2018-03-06 半导体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017176263A JP6736531B2 (ja) 2017-09-14 2017-09-14 半導体装置

Publications (3)

Publication Number Publication Date
JP2019054070A JP2019054070A (ja) 2019-04-04
JP2019054070A5 true JP2019054070A5 (enExample) 2019-09-19
JP6736531B2 JP6736531B2 (ja) 2020-08-05

Family

ID=65631494

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017176263A Active JP6736531B2 (ja) 2017-09-14 2017-09-14 半導体装置

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US (1) US10418470B2 (enExample)
JP (1) JP6736531B2 (enExample)
CN (1) CN109509789B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7061983B2 (ja) * 2019-04-26 2022-05-02 三菱電機株式会社 半導体装置
EP3748851B1 (en) * 2019-06-07 2023-03-15 Infineon Technologies AG Semiconductor device and semiconductor arrangement comprising semiconductor devices
DE102019133030B4 (de) * 2019-12-04 2023-05-04 Infineon Technologies Austria Ag Bipolartransistor mit isoliertem gate enthaltende halbleitervorrichtung und herstellungsverfahren
DE102019135545A1 (de) * 2019-12-20 2021-06-24 Infineon Technologies Ag Leistungshalbleitervorrichtung
CN111211167B (zh) * 2020-01-09 2022-04-01 杭州电子科技大学 一种消除负阻效应的rc-igbt器件结构
JP7198236B2 (ja) * 2020-03-13 2022-12-28 株式会社東芝 半導体装置
JP7488778B2 (ja) 2021-01-29 2024-05-22 株式会社東芝 半導体装置
JP7770122B2 (ja) * 2021-07-05 2025-11-14 三菱電機株式会社 半導体装置
JP2024024822A (ja) * 2022-08-10 2024-02-26 株式会社東芝 半導体パッケージ

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS539176B2 (enExample) 1973-08-28 1978-04-04
JP3973832B2 (ja) * 2000-11-10 2007-09-12 株式会社東芝 圧接型半導体装置
DE10122364B4 (de) * 2001-05-09 2006-10-19 Infineon Technologies Ag Kompensationsbauelement, Schaltungsanordnung und Verfahren
GB0122120D0 (en) * 2001-09-13 2001-10-31 Koninkl Philips Electronics Nv Edge termination in MOS transistors
JP5103830B2 (ja) * 2006-08-28 2012-12-19 三菱電機株式会社 絶縁ゲート型半導体装置
JP5206541B2 (ja) * 2008-04-01 2013-06-12 株式会社デンソー 半導体装置およびその製造方法
US20100117117A1 (en) * 2008-11-10 2010-05-13 Infineon Technologies Ag Vertical IGBT Device
JP2010135646A (ja) * 2008-12-05 2010-06-17 Toyota Central R&D Labs Inc 半導体装置
US8304829B2 (en) * 2008-12-08 2012-11-06 Fairchild Semiconductor Corporation Trench-based power semiconductor devices with increased breakdown voltage characteristics
JP5045733B2 (ja) 2008-12-24 2012-10-10 株式会社デンソー 半導体装置
JP5432750B2 (ja) * 2010-02-01 2014-03-05 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
JP5900546B2 (ja) * 2010-07-01 2016-04-06 株式会社デンソー 半導体装置
JP2013074181A (ja) * 2011-09-28 2013-04-22 Toyota Motor Corp 半導体装置とその製造方法
JP6022774B2 (ja) * 2012-01-24 2016-11-09 トヨタ自動車株式会社 半導体装置
US8866222B2 (en) * 2012-03-07 2014-10-21 Infineon Technologies Austria Ag Charge compensation semiconductor device
JP2014075582A (ja) * 2012-09-12 2014-04-24 Fuji Electric Co Ltd 半導体装置および半導体装置の製造方法
KR101876579B1 (ko) * 2012-09-13 2018-07-10 매그나칩 반도체 유한회사 전력용 반도체 소자 및 그 소자의 제조 방법
EP2942816B1 (en) * 2013-08-15 2020-10-28 Fuji Electric Co., Ltd. Semiconductor device
US9960165B2 (en) * 2013-11-05 2018-05-01 Toyota Jidosha Kabushiki Kaisha Semiconductor device having adjacent IGBT and diode regions with a shifted boundary plane between a collector region and a cathode region
JP2016167539A (ja) * 2015-03-10 2016-09-15 株式会社東芝 半導体装置
DE102015104723B4 (de) * 2015-03-27 2017-09-21 Infineon Technologies Ag Verfahren zum Herstellen von ersten und zweiten dotierten Gebieten und von Rekombinationsgebieten in einem Halbleiterkörper
KR101745776B1 (ko) * 2015-05-12 2017-06-28 매그나칩 반도체 유한회사 전력용 반도체 소자
DE102015111371B4 (de) * 2015-07-14 2017-07-20 Infineon Technologies Ag Halbleiterbauelement mit einem schaltbaren und einem nicht schaltbaren Diodengebiet
CN105226090B (zh) * 2015-11-10 2018-07-13 株洲中车时代电气股份有限公司 一种绝缘栅双极晶体管及其制作方法
DE102016115801B4 (de) * 2016-08-25 2020-10-29 Infineon Technologies Ag Transistorbauelement mit hoher stromfestigkeit
DE102016125879B3 (de) * 2016-12-29 2018-06-21 Infineon Technologies Ag Halbleitervorrichtung mit einer IGBT-Region und einer nicht schaltbaren Diodenregion
JP6652515B2 (ja) * 2017-02-09 2020-02-26 株式会社東芝 半導体装置
US10439038B2 (en) * 2017-02-09 2019-10-08 Kabushiki Kaisha Toshiba Semiconductor device and electrical apparatus
JP6891560B2 (ja) * 2017-03-15 2021-06-18 富士電機株式会社 半導体装置
JP2018160594A (ja) * 2017-03-23 2018-10-11 株式会社東芝 半導体装置
JP2018182254A (ja) * 2017-04-21 2018-11-15 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US10026728B1 (en) * 2017-04-26 2018-07-17 Semiconductor Components Industries, Llc Semiconductor device having biasing structure for self-isolating buried layer and method therefor
JP7143575B2 (ja) * 2017-07-18 2022-09-29 富士電機株式会社 半導体装置

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