JP2017208413A5 - - Google Patents

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Publication number
JP2017208413A5
JP2017208413A5 JP2016098875A JP2016098875A JP2017208413A5 JP 2017208413 A5 JP2017208413 A5 JP 2017208413A5 JP 2016098875 A JP2016098875 A JP 2016098875A JP 2016098875 A JP2016098875 A JP 2016098875A JP 2017208413 A5 JP2017208413 A5 JP 2017208413A5
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JP
Japan
Prior art keywords
layer
conductivity type
drift
field stop
carrier injection
Prior art date
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Pending
Application number
JP2016098875A
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English (en)
Japanese (ja)
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JP2017208413A (ja
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Publication date
Application filed filed Critical
Priority to JP2016098875A priority Critical patent/JP2017208413A/ja
Priority claimed from JP2016098875A external-priority patent/JP2017208413A/ja
Priority to PCT/JP2017/015874 priority patent/WO2017199679A1/ja
Priority to CN201780029794.6A priority patent/CN109155334B/zh
Publication of JP2017208413A publication Critical patent/JP2017208413A/ja
Publication of JP2017208413A5 publication Critical patent/JP2017208413A5/ja
Priority to US16/188,533 priority patent/US11217580B2/en
Pending legal-status Critical Current

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JP2016098875A 2016-05-17 2016-05-17 半導体装置 Pending JP2017208413A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2016098875A JP2017208413A (ja) 2016-05-17 2016-05-17 半導体装置
PCT/JP2017/015874 WO2017199679A1 (ja) 2016-05-17 2017-04-20 半導体装置
CN201780029794.6A CN109155334B (zh) 2016-05-17 2017-04-20 半导体装置
US16/188,533 US11217580B2 (en) 2016-05-17 2018-11-13 Semiconductor device including insulated gate bipolar transistor element and freewheeling diode element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016098875A JP2017208413A (ja) 2016-05-17 2016-05-17 半導体装置

Publications (2)

Publication Number Publication Date
JP2017208413A JP2017208413A (ja) 2017-11-24
JP2017208413A5 true JP2017208413A5 (enExample) 2018-08-30

Family

ID=60325161

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016098875A Pending JP2017208413A (ja) 2016-05-17 2016-05-17 半導体装置

Country Status (4)

Country Link
US (1) US11217580B2 (enExample)
JP (1) JP2017208413A (enExample)
CN (1) CN109155334B (enExample)
WO (1) WO2017199679A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6935731B2 (ja) 2017-11-16 2021-09-15 株式会社デンソー 半導体装置
CN110137249A (zh) 2018-02-09 2019-08-16 苏州东微半导体有限公司 Igbt功率器件及其制造方法
JP7010184B2 (ja) * 2018-09-13 2022-01-26 株式会社デンソー 半導体装置
WO2020174799A1 (ja) 2019-02-27 2020-09-03 富士電機株式会社 半導体装置
WO2020208995A1 (ja) * 2019-04-08 2020-10-15 住友電気工業株式会社 半導体装置
GB2584698B (en) * 2019-06-12 2022-09-14 Mqsemi Ag Non-punch-through reverse-conducting power semiconductor device and method for producing same
CN110797403B (zh) * 2019-10-18 2023-08-01 上海睿驱微电子科技有限公司 一种rc-igbt半导体装置
CN110797404B (zh) * 2019-10-18 2023-11-28 上海睿驱微电子科技有限公司 一种rc-igbt半导体器件
DE102020123847B4 (de) * 2020-09-14 2025-11-20 Infineon Technologies Ag Feldstoppgebiet enthaltende leistungs-halbleiterdiode und verfahren
JP7456902B2 (ja) 2020-09-17 2024-03-27 株式会社東芝 半導体装置
DE102021115971A1 (de) * 2021-06-21 2022-12-22 Infineon Technologies Ag Feldstoppgebiet enthaltende halbleitervorrichtung
CN117650165B (zh) * 2023-10-31 2024-05-31 海信家电集团股份有限公司 半导体装置
CN116632053B (zh) * 2023-07-25 2024-01-30 深圳市美浦森半导体有限公司 一种rc-igbt器件的控制方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5157201B2 (ja) 2006-03-22 2013-03-06 株式会社デンソー 半導体装置
JP5678469B2 (ja) 2010-05-07 2015-03-04 株式会社デンソー 半導体装置
JP5582102B2 (ja) * 2010-07-01 2014-09-03 株式会社デンソー 半導体装置
JP5321669B2 (ja) 2010-11-25 2013-10-23 株式会社デンソー 半導体装置
JP5737021B2 (ja) * 2011-07-12 2015-06-17 トヨタ自動車株式会社 半導体装置
JP2013080796A (ja) * 2011-10-03 2013-05-02 Toyota Central R&D Labs Inc 半導体装置
JP2013235891A (ja) 2012-05-07 2013-11-21 Denso Corp 半導体装置
JP2014103376A (ja) * 2012-09-24 2014-06-05 Toshiba Corp 半導体装置
JP5981859B2 (ja) 2013-02-15 2016-08-31 株式会社豊田中央研究所 ダイオード及びダイオードを内蔵する半導体装置
JP6158123B2 (ja) * 2014-03-14 2017-07-05 株式会社東芝 半導体装置
JP6269860B2 (ja) * 2014-12-17 2018-01-31 三菱電機株式会社 半導体装置

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