JP2015529006A5 - - Google Patents
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- Publication number
- JP2015529006A5 JP2015529006A5 JP2015519381A JP2015519381A JP2015529006A5 JP 2015529006 A5 JP2015529006 A5 JP 2015529006A5 JP 2015519381 A JP2015519381 A JP 2015519381A JP 2015519381 A JP2015519381 A JP 2015519381A JP 2015529006 A5 JP2015529006 A5 JP 2015529006A5
- Authority
- JP
- Japan
- Prior art keywords
- core
- shell
- semiconductor
- nanowire
- junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011162 core material Substances 0.000 claims 23
- 239000011257 shell material Substances 0.000 claims 21
- 239000004065 semiconductor Substances 0.000 claims 17
- 239000002070 nanowire Substances 0.000 claims 15
- 230000005684 electric field Effects 0.000 claims 6
- 230000005641 tunneling Effects 0.000 claims 5
- 230000004888 barrier function Effects 0.000 claims 4
- 239000000463 material Substances 0.000 claims 4
- 239000012777 electrically insulating material Substances 0.000 claims 3
- 239000000758 substrate Substances 0.000 claims 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 239000000969 carrier Substances 0.000 claims 1
- 239000002800 charge carrier Substances 0.000 claims 1
- 239000011258 core-shell material Substances 0.000 claims 1
- 230000005669 field effect Effects 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261668777P | 2012-07-06 | 2012-07-06 | |
| US61/668,777 | 2012-07-06 | ||
| PCT/IB2013/001856 WO2014006503A2 (en) | 2012-07-06 | 2013-07-05 | Radial nanowire esaki diode devices and methods |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015529006A JP2015529006A (ja) | 2015-10-01 |
| JP2015529006A5 true JP2015529006A5 (enExample) | 2016-06-30 |
| JP6290199B2 JP6290199B2 (ja) | 2018-03-07 |
Family
ID=49882532
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015519381A Expired - Fee Related JP6290199B2 (ja) | 2012-07-06 | 2013-07-05 | 径方向ナノワイヤエサキダイオードデバイスおよび方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US10090292B2 (enExample) |
| EP (1) | EP2870632B1 (enExample) |
| JP (1) | JP6290199B2 (enExample) |
| KR (1) | KR20150036229A (enExample) |
| CN (1) | CN104603952B (enExample) |
| WO (1) | WO2014006503A2 (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8916927B2 (en) * | 2012-07-19 | 2014-12-23 | Taiwan Semiconductor Manufacturing | Vertical tunnel field effect transistor (FET) |
| SE1530097A1 (en) * | 2015-06-22 | 2016-12-23 | Method for Vertical Gate-Last Process | |
| US9748379B2 (en) * | 2015-06-25 | 2017-08-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Double exponential mechanism controlled transistor |
| JP6600918B2 (ja) * | 2015-09-30 | 2019-11-06 | 国立大学法人北海道大学 | トンネル電界効果トランジスタ |
| JP6730598B2 (ja) * | 2016-07-19 | 2020-07-29 | 富士通株式会社 | 半導体装置 |
| JP6741943B2 (ja) * | 2016-08-31 | 2020-08-19 | 富士通株式会社 | 半導体装置及びその製造方法 |
| US10475673B2 (en) * | 2016-09-28 | 2019-11-12 | Stmicroelectronics S.R.L. | Apparatus for manufacturing a silicon carbide wafer |
| JP6631458B2 (ja) * | 2016-09-29 | 2020-01-15 | 富士通株式会社 | 電子デバイス及びその製造方法 |
| US10325993B2 (en) * | 2017-09-28 | 2019-06-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Gate all around device and fabrication thereof |
| US10868157B2 (en) * | 2018-09-26 | 2020-12-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Gated metal-insulator-semiconductor (MIS) tunnel diode having negative transconductance |
| US11309177B2 (en) | 2018-11-06 | 2022-04-19 | Stmicroelectronics S.R.L. | Apparatus and method for manufacturing a wafer |
| JP7371366B2 (ja) * | 2019-06-27 | 2023-10-31 | 富士通株式会社 | 半導体デバイス、及びこれを用いた無線受信器 |
| IT201900015416A1 (it) | 2019-09-03 | 2021-03-03 | St Microelectronics Srl | Apparecchio per la crescita di una fetta di materiale semiconduttore, in particolare di carburo di silicio, e procedimento di fabbricazione associato |
| WO2021210095A1 (ja) | 2020-04-15 | 2021-10-21 | 富士通株式会社 | 半導体装置、リザバーコンピューティングシステム及び半導体装置の製造方法 |
| JP7176700B2 (ja) * | 2020-07-31 | 2022-11-22 | セイコーエプソン株式会社 | 発光装置およびプロジェクター |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7335908B2 (en) | 2002-07-08 | 2008-02-26 | Qunano Ab | Nanostructures and methods for manufacturing the same |
| WO2006135336A1 (en) * | 2005-06-16 | 2006-12-21 | Qunano Ab | Semiconductor nanowire transistor |
| US20070052012A1 (en) | 2005-08-24 | 2007-03-08 | Micron Technology, Inc. | Vertical tunneling nano-wire transistor |
| EP1892769A2 (en) | 2006-08-25 | 2008-02-27 | General Electric Company | Single conformal junction nanowire photovoltaic devices |
| US7893476B2 (en) * | 2006-09-15 | 2011-02-22 | Imec | Tunnel effect transistors based on silicon nanowires |
| EP2095426A4 (en) | 2006-12-22 | 2012-10-10 | Qunano Ab | NANOELECTRIC STRUCTURE AND MANUFACTURING METHOD THEREFOR |
| US8049203B2 (en) | 2006-12-22 | 2011-11-01 | Qunano Ab | Nanoelectronic structure and method of producing such |
| US7977568B2 (en) | 2007-01-11 | 2011-07-12 | General Electric Company | Multilayered film-nanowire composite, bifacial, and tandem solar cells |
| EP2102899B1 (en) | 2007-01-12 | 2020-11-11 | QuNano AB | Nitride nanowires and method of producing such |
| EP2168167B1 (en) | 2007-06-19 | 2019-04-10 | QuNano AB | Nanowire-based solar cell structure |
| US20110089400A1 (en) | 2008-04-15 | 2011-04-21 | Qunano Ab | Nanowire wrap gate devices |
| KR101633953B1 (ko) * | 2009-04-15 | 2016-06-27 | 솔 발테익스 에이비 | 나노와이어를 가지는 다중-접합 광전지 |
| CN102576726B (zh) * | 2009-09-30 | 2015-01-07 | 国立大学法人北海道大学 | 隧道场效应晶体管及其制造方法 |
| KR20120099441A (ko) * | 2009-10-22 | 2012-09-10 | 솔 발테익스 에이비 | 나노와이어 터널 다이오드 및 이의 제조 방법 |
-
2013
- 2013-07-05 JP JP2015519381A patent/JP6290199B2/ja not_active Expired - Fee Related
- 2013-07-05 WO PCT/IB2013/001856 patent/WO2014006503A2/en not_active Ceased
- 2013-07-05 CN CN201380036099.4A patent/CN104603952B/zh not_active Expired - Fee Related
- 2013-07-05 EP EP13813238.6A patent/EP2870632B1/en not_active Not-in-force
- 2013-07-05 US US14/407,007 patent/US10090292B2/en not_active Expired - Fee Related
- 2013-07-05 KR KR20157002218A patent/KR20150036229A/ko not_active Withdrawn
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