JP2011521446A5 - - Google Patents

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Publication number
JP2011521446A5
JP2011521446A5 JP2011508627A JP2011508627A JP2011521446A5 JP 2011521446 A5 JP2011521446 A5 JP 2011521446A5 JP 2011508627 A JP2011508627 A JP 2011508627A JP 2011508627 A JP2011508627 A JP 2011508627A JP 2011521446 A5 JP2011521446 A5 JP 2011521446A5
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JP
Japan
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layer
dopant concentration
semiconductor material
rising region
conductivity type
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JP2011508627A
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English (en)
Japanese (ja)
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JP5593308B2 (ja
JP2011521446A (ja
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Priority claimed from US12/117,121 external-priority patent/US7977713B2/en
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Publication of JP2011521446A publication Critical patent/JP2011521446A/ja
Publication of JP2011521446A5 publication Critical patent/JP2011521446A5/ja
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Publication of JP5593308B2 publication Critical patent/JP5593308B2/ja
Expired - Fee Related legal-status Critical Current
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JP2011508627A 2008-05-08 2009-05-06 促進された導電性を有する非パンチスルー半導体チャネルを備えた半導体素子及び製法 Expired - Fee Related JP5593308B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/117,121 2008-05-08
US12/117,121 US7977713B2 (en) 2008-05-08 2008-05-08 Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making
PCT/US2009/042983 WO2009137578A2 (en) 2008-05-08 2009-05-06 Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making

Publications (3)

Publication Number Publication Date
JP2011521446A JP2011521446A (ja) 2011-07-21
JP2011521446A5 true JP2011521446A5 (enExample) 2012-06-21
JP5593308B2 JP5593308B2 (ja) 2014-09-17

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ID=41265372

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011508627A Expired - Fee Related JP5593308B2 (ja) 2008-05-08 2009-05-06 促進された導電性を有する非パンチスルー半導体チャネルを備えた半導体素子及び製法

Country Status (9)

Country Link
US (2) US7977713B2 (enExample)
EP (1) EP2289103A4 (enExample)
JP (1) JP5593308B2 (enExample)
KR (1) KR20110018891A (enExample)
CN (1) CN102084484B (enExample)
AU (1) AU2009244273A1 (enExample)
CA (1) CA2722942A1 (enExample)
TW (1) TWI415258B (enExample)
WO (1) WO2009137578A2 (enExample)

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US9429366B2 (en) 2010-09-29 2016-08-30 Kraton Polymers U.S. Llc Energy recovery ventilation sulfonated block copolymer laminate membrane
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US9224845B1 (en) * 2014-11-12 2015-12-29 Stmicroelectronics, Inc. Silicon carbide static induction transistor and process for making a silicon carbide static induction transistor
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CN106158943A (zh) * 2016-06-28 2016-11-23 长安大学 N沟碳化硅静电感应晶闸管及其制造方法
CN109791951B (zh) * 2016-09-09 2023-08-01 美国联合碳化硅公司 具有改进的阈值电压控制的沟槽垂直jfet
JP6787367B2 (ja) 2017-07-26 2020-11-18 株式会社デンソー 半導体装置
US10276667B1 (en) 2018-05-31 2019-04-30 Silanna Asia Pte Ltd High voltage breakdown tapered vertical conduction junction transistor
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