JP2012104648A5 - - Google Patents

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Publication number
JP2012104648A5
JP2012104648A5 JP2010251725A JP2010251725A JP2012104648A5 JP 2012104648 A5 JP2012104648 A5 JP 2012104648A5 JP 2010251725 A JP2010251725 A JP 2010251725A JP 2010251725 A JP2010251725 A JP 2010251725A JP 2012104648 A5 JP2012104648 A5 JP 2012104648A5
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JP
Japan
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region
ion implantation
layer
impurity concentration
conductivity type
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JP2010251725A
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English (en)
Japanese (ja)
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JP5574923B2 (ja
JP2012104648A (ja
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Priority claimed from JP2010251725A external-priority patent/JP5574923B2/ja
Priority to JP2010251725A priority Critical patent/JP5574923B2/ja
Priority to US13/197,237 priority patent/US8987817B2/en
Priority to CN201110252431.3A priority patent/CN102468327B/zh
Priority to DE102011085331.6A priority patent/DE102011085331B4/de
Priority to KR1020110115591A priority patent/KR101341574B1/ko
Publication of JP2012104648A publication Critical patent/JP2012104648A/ja
Publication of JP2012104648A5 publication Critical patent/JP2012104648A5/ja
Publication of JP5574923B2 publication Critical patent/JP5574923B2/ja
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JP2010251725A 2010-11-10 2010-11-10 半導体装置およびその製造方法 Active JP5574923B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2010251725A JP5574923B2 (ja) 2010-11-10 2010-11-10 半導体装置およびその製造方法
US13/197,237 US8987817B2 (en) 2010-11-10 2011-08-03 Semiconductor device having a gate insulating film with a thicker portion covering a surface of an epitaxial protrusion and manufacturing method thereof
CN201110252431.3A CN102468327B (zh) 2010-11-10 2011-08-30 半导体装置及其制造方法
DE102011085331.6A DE102011085331B4 (de) 2010-11-10 2011-10-27 Halbleitervorrichtung und Verfahren zum Herstellen derselben
KR1020110115591A KR101341574B1 (ko) 2010-11-10 2011-11-08 반도체장치 및 그 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010251725A JP5574923B2 (ja) 2010-11-10 2010-11-10 半導体装置およびその製造方法

Publications (3)

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JP2012104648A JP2012104648A (ja) 2012-05-31
JP2012104648A5 true JP2012104648A5 (enExample) 2013-02-28
JP5574923B2 JP5574923B2 (ja) 2014-08-20

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Family Applications (1)

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JP2010251725A Active JP5574923B2 (ja) 2010-11-10 2010-11-10 半導体装置およびその製造方法

Country Status (5)

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US (1) US8987817B2 (enExample)
JP (1) JP5574923B2 (enExample)
KR (1) KR101341574B1 (enExample)
CN (1) CN102468327B (enExample)
DE (1) DE102011085331B4 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5895750B2 (ja) * 2012-07-09 2016-03-30 三菱電機株式会社 炭化珪素半導体装置およびその製造方法
US9425261B2 (en) * 2012-12-28 2016-08-23 Mitsubishi Electric Corporation Silicon-carbide semiconductor device and method for manufacturing the same
US10115815B2 (en) 2012-12-28 2018-10-30 Cree, Inc. Transistor structures having a deep recessed P+ junction and methods for making same
CN104347632B (zh) * 2013-07-30 2017-09-01 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制作方法
US9748393B2 (en) * 2013-10-17 2017-08-29 Mitsubishi Electric Corporation Silicon carbide semiconductor device with a trench
JP6610653B2 (ja) * 2015-02-20 2019-11-27 住友電気工業株式会社 炭化珪素半導体装置
WO2018012241A1 (ja) * 2016-07-14 2018-01-18 三菱電機株式会社 半導体装置およびその製造方法
GB2569497B (en) * 2016-09-23 2021-09-29 Dynex Semiconductor Ltd A power MOSFET with an integrated Schottky diode
JP6593294B2 (ja) * 2016-09-28 2019-10-23 トヨタ自動車株式会社 半導体装置
CN107785438A (zh) * 2017-11-27 2018-03-09 北京品捷电子科技有限公司 一种SiC基UMOSFET的制备方法及SiC基UMOSFET
CN111261720A (zh) * 2018-12-03 2020-06-09 珠海格力电器股份有限公司 半导体器件及其制备方法
CN111933685B (zh) * 2020-06-24 2022-09-09 株洲中车时代半导体有限公司 碳化硅mosfet器件的元胞结构、其制备方法及碳化硅mosfet器件
CN119547578A (zh) * 2022-07-11 2025-02-28 日立能源有限公司 功率半导体器件和用于制造功率半导体器件的方法
KR20240127691A (ko) * 2023-02-16 2024-08-23 현대모비스 주식회사 전력 반도체 소자
CN117637854B (zh) * 2024-01-24 2024-04-19 苏州华太电子技术股份有限公司 垂直型电容耦合栅控结型场效应晶体管及其制备方法

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JPH0449095A (ja) 1990-06-18 1992-02-18 Nec Corp 改頁装置
JP2003124463A (ja) 1994-09-14 2003-04-25 Toshiba Corp 半導体装置
US5510281A (en) * 1995-03-20 1996-04-23 General Electric Company Method of fabricating a self-aligned DMOS transistor device using SiC and spacers
US5907169A (en) * 1997-04-18 1999-05-25 Megamos Corporation Self-aligned and process-adjusted high density power transistor with gate sidewalls provided with punch through prevention and reduced JFET resistance
JP3180895B2 (ja) * 1997-08-18 2001-06-25 富士電機株式会社 炭化けい素半導体装置の製造方法
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JP5012286B2 (ja) * 2007-07-27 2012-08-29 住友電気工業株式会社 酸化膜電界効果トランジスタ
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