DE102011085331B4 - Halbleitervorrichtung und Verfahren zum Herstellen derselben - Google Patents

Halbleitervorrichtung und Verfahren zum Herstellen derselben Download PDF

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Publication number
DE102011085331B4
DE102011085331B4 DE102011085331.6A DE102011085331A DE102011085331B4 DE 102011085331 B4 DE102011085331 B4 DE 102011085331B4 DE 102011085331 A DE102011085331 A DE 102011085331A DE 102011085331 B4 DE102011085331 B4 DE 102011085331B4
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epitaxial layer
gate insulating
projection
conductivity type
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DE102011085331A1 (de
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Yoichiro Tarui
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0295—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the source electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/662—Vertical DMOS [VDMOS] FETs having a drift region having a doping concentration that is higher between adjacent body regions relative to other parts of the drift region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices
    • H10D64/2527—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices for vertical devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54426—Marks applied to semiconductor devices or parts for alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
DE102011085331.6A 2010-11-10 2011-10-27 Halbleitervorrichtung und Verfahren zum Herstellen derselben Active DE102011085331B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010-251725 2010-11-10
JP2010251725A JP5574923B2 (ja) 2010-11-10 2010-11-10 半導体装置およびその製造方法

Publications (2)

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DE102011085331A1 DE102011085331A1 (de) 2012-05-10
DE102011085331B4 true DE102011085331B4 (de) 2023-03-09

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US (1) US8987817B2 (enExample)
JP (1) JP5574923B2 (enExample)
KR (1) KR101341574B1 (enExample)
CN (1) CN102468327B (enExample)
DE (1) DE102011085331B4 (enExample)

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JP5895750B2 (ja) * 2012-07-09 2016-03-30 三菱電機株式会社 炭化珪素半導体装置およびその製造方法
US9425261B2 (en) * 2012-12-28 2016-08-23 Mitsubishi Electric Corporation Silicon-carbide semiconductor device and method for manufacturing the same
US10115815B2 (en) 2012-12-28 2018-10-30 Cree, Inc. Transistor structures having a deep recessed P+ junction and methods for making same
CN104347632B (zh) * 2013-07-30 2017-09-01 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制作方法
US9748393B2 (en) * 2013-10-17 2017-08-29 Mitsubishi Electric Corporation Silicon carbide semiconductor device with a trench
JP6610653B2 (ja) * 2015-02-20 2019-11-27 住友電気工業株式会社 炭化珪素半導体装置
WO2018012241A1 (ja) * 2016-07-14 2018-01-18 三菱電機株式会社 半導体装置およびその製造方法
GB2569497B (en) * 2016-09-23 2021-09-29 Dynex Semiconductor Ltd A power MOSFET with an integrated Schottky diode
JP6593294B2 (ja) * 2016-09-28 2019-10-23 トヨタ自動車株式会社 半導体装置
CN107785438A (zh) * 2017-11-27 2018-03-09 北京品捷电子科技有限公司 一种SiC基UMOSFET的制备方法及SiC基UMOSFET
CN111261720A (zh) * 2018-12-03 2020-06-09 珠海格力电器股份有限公司 半导体器件及其制备方法
CN111933685B (zh) * 2020-06-24 2022-09-09 株洲中车时代半导体有限公司 碳化硅mosfet器件的元胞结构、其制备方法及碳化硅mosfet器件
CN119547578A (zh) * 2022-07-11 2025-02-28 日立能源有限公司 功率半导体器件和用于制造功率半导体器件的方法
KR20240127691A (ko) * 2023-02-16 2024-08-23 현대모비스 주식회사 전력 반도체 소자
CN117637854B (zh) * 2024-01-24 2024-04-19 苏州华太电子技术股份有限公司 垂直型电容耦合栅控结型场效应晶体管及其制备方法

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US5907169A (en) 1997-04-18 1999-05-25 Megamos Corporation Self-aligned and process-adjusted high density power transistor with gate sidewalls provided with punch through prevention and reduced JFET resistance
US6048759A (en) 1998-02-11 2000-04-11 Magepower Semiconductor Corporation Gate/drain capacitance reduction for double gate-oxide DMOS without degrading avalanche breakdown
US20040119076A1 (en) 2002-12-20 2004-06-24 Sei-Hyung Ryu Vertical JFET limited silicon carbide power metal-oxide semiconductor field effect transistors and methods of fabricating vertical JFET limited silicon carbide metal- oxide semiconductor field effect transistors
JP2005191241A (ja) 2003-12-25 2005-07-14 Nissan Motor Co Ltd 半導体装置及びその製造方法
JP2009032919A (ja) 2007-07-27 2009-02-12 Sumitomo Electric Ind Ltd 酸化膜電界効果トランジスタおよびその製造方法

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JP2003124463A (ja) 1994-09-14 2003-04-25 Toshiba Corp 半導体装置
US5510281A (en) * 1995-03-20 1996-04-23 General Electric Company Method of fabricating a self-aligned DMOS transistor device using SiC and spacers
JP3180895B2 (ja) * 1997-08-18 2001-06-25 富士電機株式会社 炭化けい素半導体装置の製造方法
JP2002280554A (ja) * 2001-03-21 2002-09-27 Sanyo Electric Co Ltd 縦型電界効果トランジスタの製造方法
KR100854078B1 (ko) * 2001-09-12 2008-08-25 페어차일드코리아반도체 주식회사 모스 게이트형 전력용 반도체소자 및 그 제조방법
CN100544026C (zh) 2002-12-20 2009-09-23 克里公司 碳化硅功率mos场效应晶体管及制造方法
US7452763B1 (en) * 2003-03-04 2008-11-18 Qspeed Semiconductor Inc. Method for a junction field effect transistor with reduced gate capacitance
JP4945055B2 (ja) * 2003-08-04 2012-06-06 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US7407837B2 (en) * 2004-01-27 2008-08-05 Fuji Electric Holdings Co., Ltd. Method of manufacturing silicon carbide semiconductor device
US7846822B2 (en) * 2004-07-30 2010-12-07 The Board Of Trustees Of The University Of Illinois Methods for controlling dopant concentration and activation in semiconductor structures
JP2006120852A (ja) * 2004-10-21 2006-05-11 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
US7883949B2 (en) * 2006-06-29 2011-02-08 Cree, Inc Methods of forming silicon carbide switching devices including P-type channels
JP4286877B2 (ja) 2007-03-13 2009-07-01 Ｏｋｉセミコンダクタ株式会社 炭化珪素半導体装置およびその製造方法
US7982224B2 (en) * 2007-10-15 2011-07-19 Panasonic Corporation Semiconductor device with silicon carbide epitaxial layer including dopant profiles for reducing current overconcentration
JP5177151B2 (ja) * 2008-02-12 2013-04-03 三菱電機株式会社 炭化珪素半導体装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5907169A (en) 1997-04-18 1999-05-25 Megamos Corporation Self-aligned and process-adjusted high density power transistor with gate sidewalls provided with punch through prevention and reduced JFET resistance
US6048759A (en) 1998-02-11 2000-04-11 Magepower Semiconductor Corporation Gate/drain capacitance reduction for double gate-oxide DMOS without degrading avalanche breakdown
US20040119076A1 (en) 2002-12-20 2004-06-24 Sei-Hyung Ryu Vertical JFET limited silicon carbide power metal-oxide semiconductor field effect transistors and methods of fabricating vertical JFET limited silicon carbide metal- oxide semiconductor field effect transistors
JP2005191241A (ja) 2003-12-25 2005-07-14 Nissan Motor Co Ltd 半導体装置及びその製造方法
JP4049095B2 (ja) 2003-12-25 2008-02-20 日産自動車株式会社 半導体装置及びその製造方法
JP2009032919A (ja) 2007-07-27 2009-02-12 Sumitomo Electric Ind Ltd 酸化膜電界効果トランジスタおよびその製造方法

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US8987817B2 (en) 2015-03-24
CN102468327B (zh) 2016-12-07
CN102468327A (zh) 2012-05-23
KR101341574B1 (ko) 2013-12-16
DE102011085331A1 (de) 2012-05-10
JP5574923B2 (ja) 2014-08-20
US20120112266A1 (en) 2012-05-10
KR20120050382A (ko) 2012-05-18
JP2012104648A (ja) 2012-05-31

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