JP2010186989A5 - - Google Patents

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Publication number
JP2010186989A5
JP2010186989A5 JP2010001153A JP2010001153A JP2010186989A5 JP 2010186989 A5 JP2010186989 A5 JP 2010186989A5 JP 2010001153 A JP2010001153 A JP 2010001153A JP 2010001153 A JP2010001153 A JP 2010001153A JP 2010186989 A5 JP2010186989 A5 JP 2010186989A5
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JP
Japan
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region
semiconductor
conductivity type
forming
impurity concentration
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JP2010001153A
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English (en)
Japanese (ja)
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JP2010186989A (ja
JP4703769B2 (ja
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Priority to JP2010001153A priority Critical patent/JP4703769B2/ja
Priority claimed from JP2010001153A external-priority patent/JP4703769B2/ja
Priority to US12/688,459 priority patent/US20100176449A1/en
Publication of JP2010186989A publication Critical patent/JP2010186989A/ja
Publication of JP2010186989A5 publication Critical patent/JP2010186989A5/ja
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Publication of JP4703769B2 publication Critical patent/JP4703769B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2010001153A 2009-01-15 2010-01-06 半導体装置及びその製造方法 Expired - Fee Related JP4703769B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2010001153A JP4703769B2 (ja) 2009-01-15 2010-01-06 半導体装置及びその製造方法
US12/688,459 US20100176449A1 (en) 2009-01-15 2010-01-15 Semiconductor device and method for manufacturing same

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009006880 2009-01-15
JP2009006880 2009-01-15
JP2010001153A JP4703769B2 (ja) 2009-01-15 2010-01-06 半導体装置及びその製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010292463A Division JP2011097080A (ja) 2009-01-15 2010-12-28 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2010186989A JP2010186989A (ja) 2010-08-26
JP2010186989A5 true JP2010186989A5 (enExample) 2010-12-02
JP4703769B2 JP4703769B2 (ja) 2011-06-15

Family

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Family Applications (1)

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JP2010001153A Expired - Fee Related JP4703769B2 (ja) 2009-01-15 2010-01-06 半導体装置及びその製造方法

Country Status (2)

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US (1) US20100176449A1 (enExample)
JP (1) JP4703769B2 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5434501B2 (ja) * 2009-11-13 2014-03-05 富士通セミコンダクター株式会社 Ｍｏｓトランジスタおよび半導体集積回路装置、半導体装置
CN103187279B (zh) * 2011-12-29 2016-07-06 无锡华润上华半导体有限公司 半导体器件的制作方法
WO2013164210A1 (de) 2012-05-02 2013-11-07 Elmos Semiconductor Ag Pmos-transistor mit niedriger schwellspannung sowie verfahren zu seiner herstellung
JP5936513B2 (ja) * 2012-10-12 2016-06-22 三菱電機株式会社 横型高耐圧トランジスタの製造方法
CN103035731B (zh) * 2012-12-11 2016-04-13 上海华虹宏力半导体制造有限公司 射频横向双扩散场效应晶体管及其制造方法
CN103872123B (zh) * 2012-12-12 2017-06-06 上海华虹宏力半导体制造有限公司 N沟道射频ldmos器件及制造方法
CN104701368B (zh) * 2013-12-06 2018-04-17 上海华虹宏力半导体制造有限公司 射频ldmos器件及其制造方法
CN104701369A (zh) * 2013-12-06 2015-06-10 上海华虹宏力半导体制造有限公司 射频ldmos器件及工艺方法
US20150200295A1 (en) * 2014-01-10 2015-07-16 Cypress Semiconductor Corporation Drain Extended MOS Transistors With Split Channel
US9159819B2 (en) * 2014-02-20 2015-10-13 Infineon Technologies Ag Semiconductor device and RC-IGBT with zones directly adjoining a rear side electrode
US9443927B2 (en) * 2014-07-30 2016-09-13 United Microelectronics Corp. Semiconductor device
CN104465407A (zh) * 2014-12-31 2015-03-25 中航（重庆）微电子有限公司 一种半导体器件及制备方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5386136A (en) * 1991-05-06 1995-01-31 Siliconix Incorporated Lightly-doped drain MOSFET with improved breakdown characteristics
DE19526183C1 (de) * 1995-07-18 1996-09-12 Siemens Ag Verfahren zur Herstellung von mindestens zwei Transistoren in einem Halbleiterkörper
ATE429708T1 (de) * 2001-08-17 2009-05-15 Ihp Gmbh Ldmos-transistor und dessen herstellungsverfahren
JP4761691B2 (ja) * 2002-06-24 2011-08-31 富士電機株式会社 半導体装置
US7238986B2 (en) * 2004-05-03 2007-07-03 Texas Instruments Incorporated Robust DEMOS transistors and method for making the same
US7125777B2 (en) * 2004-07-15 2006-10-24 Fairchild Semiconductor Corporation Asymmetric hetero-doped high-voltage MOSFET (AH2MOS)
US20060097292A1 (en) * 2004-10-29 2006-05-11 Kabushiki Kaisha Toshiba Semiconductor device
JP2006245482A (ja) * 2005-03-07 2006-09-14 Ricoh Co Ltd 半導体装置及びその製造方法、並びにその応用装置
JP2007049039A (ja) * 2005-08-11 2007-02-22 Toshiba Corp 半導体装置
JP2007103721A (ja) * 2005-10-05 2007-04-19 Toshiba Corp Ｄｃ−ｄｃコンバータ
US7375408B2 (en) * 2005-10-11 2008-05-20 United Microelectronics Corp. Fabricating method of a high voltage metal oxide semiconductor device
JP2008172112A (ja) * 2007-01-15 2008-07-24 Toshiba Corp 半導体装置

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