JP2009054999A5 - - Google Patents

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Publication number
JP2009054999A5
JP2009054999A5 JP2008174498A JP2008174498A JP2009054999A5 JP 2009054999 A5 JP2009054999 A5 JP 2009054999A5 JP 2008174498 A JP2008174498 A JP 2008174498A JP 2008174498 A JP2008174498 A JP 2008174498A JP 2009054999 A5 JP2009054999 A5 JP 2009054999A5
Authority
JP
Japan
Prior art keywords
region
trench
drain region
source region
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2008174498A
Other languages
English (en)
Japanese (ja)
Other versions
JP5314949B2 (ja
JP2009054999A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2008174498A external-priority patent/JP5314949B2/ja
Priority to JP2008174498A priority Critical patent/JP5314949B2/ja
Priority to US12/178,328 priority patent/US8236648B2/en
Priority to TW097128181A priority patent/TWI445094B/zh
Priority to CN200810144725.2A priority patent/CN101355104B/zh
Priority to KR1020080072872A priority patent/KR101546537B1/ko
Publication of JP2009054999A publication Critical patent/JP2009054999A/ja
Publication of JP2009054999A5 publication Critical patent/JP2009054999A5/ja
Publication of JP5314949B2 publication Critical patent/JP5314949B2/ja
Application granted granted Critical
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2008174498A 2007-07-27 2008-07-03 半導体装置の製造方法 Expired - Fee Related JP5314949B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2008174498A JP5314949B2 (ja) 2007-07-27 2008-07-03 半導体装置の製造方法
US12/178,328 US8236648B2 (en) 2007-07-27 2008-07-23 Trench MOS transistor and method of manufacturing the same
TW097128181A TWI445094B (zh) 2007-07-27 2008-07-24 半導體裝置及其製造方法
KR1020080072872A KR101546537B1 (ko) 2007-07-27 2008-07-25 반도체 소자 및 그 제조 방법
CN200810144725.2A CN101355104B (zh) 2007-07-27 2008-07-25 半导体装置及其制造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007195493 2007-07-27
JP2007195493 2007-07-27
JP2008174498A JP5314949B2 (ja) 2007-07-27 2008-07-03 半導体装置の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013096846A Division JP5567711B2 (ja) 2007-07-27 2013-05-02 半導体装置

Publications (3)

Publication Number Publication Date
JP2009054999A JP2009054999A (ja) 2009-03-12
JP2009054999A5 true JP2009054999A5 (enExample) 2011-06-30
JP5314949B2 JP5314949B2 (ja) 2013-10-16

Family

ID=40307796

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2008174498A Expired - Fee Related JP5314949B2 (ja) 2007-07-27 2008-07-03 半導体装置の製造方法
JP2013096846A Expired - Fee Related JP5567711B2 (ja) 2007-07-27 2013-05-02 半導体装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2013096846A Expired - Fee Related JP5567711B2 (ja) 2007-07-27 2013-05-02 半導体装置

Country Status (4)

Country Link
JP (2) JP5314949B2 (enExample)
KR (1) KR101546537B1 (enExample)
CN (1) CN101355104B (enExample)
TW (1) TWI445094B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5498107B2 (ja) 2009-09-24 2014-05-21 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP5378925B2 (ja) 2009-09-24 2013-12-25 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US8558320B2 (en) * 2009-12-15 2013-10-15 Qualcomm Incorporated Systems and methods employing a physically asymmetric semiconductor device having symmetrical electrical behavior
JP2012204799A (ja) * 2011-03-28 2012-10-22 Toshiba Corp 半導体記憶装置及びその製造方法
CN103280455B (zh) * 2013-04-28 2016-05-18 苏州市职业大学 横向扩散型低导通电阻mos器件
CN104465726B (zh) * 2013-09-17 2017-08-11 世界先进积体电路股份有限公司 半导体装置及其制造方法
US9773902B2 (en) 2013-11-25 2017-09-26 Vanguard International Semiconductor Corporation Trench-gate semiconductor device and method for forming the same
JP2019016668A (ja) * 2017-07-05 2019-01-31 三菱電機株式会社 炭化珪素半導体装置並びにその製造方法及び電力変換装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0770713B2 (ja) * 1987-02-12 1995-07-31 松下電器産業株式会社 Ｍｏｓ型半導体装置及びその製造方法
JPH0223670A (ja) * 1988-07-12 1990-01-25 Seiko Epson Corp 半導体装置
JPH02134871A (ja) * 1988-11-15 1990-05-23 Mitsubishi Electric Corp 半導体装置
JPH02166771A (ja) * 1988-12-20 1990-06-27 Ricoh Co Ltd 半導体集積回路装置
JPH033272A (ja) * 1989-05-30 1991-01-09 Mitsubishi Electric Corp 半導体装置
JPH0575121A (ja) * 1991-09-18 1993-03-26 Fujitsu Ltd 半導体装置
JPH05160401A (ja) * 1991-12-05 1993-06-25 Sharp Corp Ｍｏｓトランジスタ
JPH08264764A (ja) * 1995-03-22 1996-10-11 Toshiba Corp 半導体装置
US6100146A (en) * 1996-10-30 2000-08-08 Advanced Micro Devices, Inc. Method of forming trench transistor with insulative spacers
US6956263B1 (en) * 1999-12-28 2005-10-18 Intel Corporation Field effect transistor structure with self-aligned raised source/drain extensions
JP4031677B2 (ja) * 2002-07-05 2008-01-09 シャープ株式会社 半導体装置の製造方法
JP5110776B2 (ja) * 2004-07-01 2012-12-26 セイコーインスツル株式会社 半導体装置の製造方法

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