JP2009027002A5 - - Google Patents
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- Publication number
- JP2009027002A5 JP2009027002A5 JP2007189391A JP2007189391A JP2009027002A5 JP 2009027002 A5 JP2009027002 A5 JP 2009027002A5 JP 2007189391 A JP2007189391 A JP 2007189391A JP 2007189391 A JP2007189391 A JP 2007189391A JP 2009027002 A5 JP2009027002 A5 JP 2009027002A5
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- gate electrode
- forming
- dummy gate
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 11
- 238000004519 manufacturing process Methods 0.000 claims 7
- 125000006850 spacer group Chemical group 0.000 claims 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims 4
- 238000000034 method Methods 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims 3
- 239000004020 conductor Substances 0.000 claims 3
- 239000011810 insulating material Substances 0.000 claims 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 230000005669 field effect Effects 0.000 claims 1
- 230000000873 masking effect Effects 0.000 claims 1
- 238000005498 polishing Methods 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007189391A JP5070969B2 (ja) | 2007-07-20 | 2007-07-20 | 半導体装置の製造方法 |
| US12/144,752 US7592232B2 (en) | 2007-07-20 | 2008-06-24 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007189391A JP5070969B2 (ja) | 2007-07-20 | 2007-07-20 | 半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009027002A JP2009027002A (ja) | 2009-02-05 |
| JP2009027002A5 true JP2009027002A5 (enExample) | 2010-04-15 |
| JP5070969B2 JP5070969B2 (ja) | 2012-11-14 |
Family
ID=40265168
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007189391A Expired - Fee Related JP5070969B2 (ja) | 2007-07-20 | 2007-07-20 | 半導体装置の製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US7592232B2 (enExample) |
| JP (1) | JP5070969B2 (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7932563B2 (en) * | 2009-01-30 | 2011-04-26 | Xilinx, Inc. | Techniques for improving transistor-to-transistor stress uniformity |
| DE102009055435B4 (de) * | 2009-12-31 | 2017-11-09 | Globalfoundries Dresden Module One Limited Liability Company & Co. Kg | Verstärkter Einschluss von Metallgateelektrodenstrukturen mit großem ε durch Verringern der Materialerosion einer dielektrischen Deckschicht beim Erzeugen einer verformungsinduzierenden Halbleiterlegierung |
| US8981495B2 (en) * | 2010-02-08 | 2015-03-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Laterally diffused metal oxide semiconductor transistor with partially unsilicided source/drain |
| DE102010028460B4 (de) * | 2010-04-30 | 2014-01-23 | Globalfoundries Dresden Module One Limited Liability Company & Co. Kg | Verfahren zum Herstellen eines Halbleiterbauelements mit einer reduzierten Defektrate in Kontakten, das Austauschgateelektrodenstrukturen unter Anwendung einer Zwischendeckschicht aufweist |
| US8497210B2 (en) * | 2010-10-04 | 2013-07-30 | International Business Machines Corporation | Shallow trench isolation chemical mechanical planarization |
| CN102487015A (zh) | 2010-12-03 | 2012-06-06 | 中国科学院微电子研究所 | 一种半导体结构及其制造方法 |
| CN102487014B (zh) | 2010-12-03 | 2014-03-05 | 中国科学院微电子研究所 | 一种半导体结构及其制造方法 |
| CN102938416A (zh) * | 2011-08-16 | 2013-02-20 | 中国科学院微电子研究所 | 半导体器件及其制造方法 |
| CN103311294B (zh) * | 2012-03-14 | 2016-09-21 | 中国科学院微电子研究所 | 鳍式场效应晶体管及其制造方法 |
| WO2014132537A1 (ja) * | 2013-03-01 | 2014-09-04 | 日本電気株式会社 | 情報処理装置、そのデータ処理方法、およびプログラム |
| KR102065496B1 (ko) * | 2013-06-18 | 2020-01-13 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
| US9449827B2 (en) | 2014-02-04 | 2016-09-20 | International Business Machines Corporation | Metal semiconductor alloy contact resistance improvement |
| US9865466B2 (en) * | 2015-09-25 | 2018-01-09 | Applied Materials, Inc. | Silicide phase control by confinement |
| US10483167B2 (en) | 2017-08-15 | 2019-11-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for manufacturing dual FinFET device |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07111962B2 (ja) * | 1992-11-27 | 1995-11-29 | 日本電気株式会社 | 選択平坦化ポリッシング方法 |
| JPH1168100A (ja) * | 1997-08-19 | 1999-03-09 | Rohm Co Ltd | 半導体装置の製造方法 |
| WO2001071807A1 (en) * | 2000-03-24 | 2001-09-27 | Fujitsu Limited | Semiconductor device and method of manufacture thereof |
| JP2001308318A (ja) | 2000-04-19 | 2001-11-02 | Mitsubishi Electric Corp | 半導体装置の製造方法及び半導体装置 |
| JP2002151685A (ja) * | 2000-11-14 | 2002-05-24 | Fujitsu Ltd | 絶縁ゲート型半導体装置の製造方法 |
| JP3966102B2 (ja) * | 2002-07-05 | 2007-08-29 | 松下電器産業株式会社 | 半導体装置の製造方法 |
| JP4107021B2 (ja) | 2002-09-10 | 2008-06-25 | ダイソー株式会社 | 固体塩基触媒、その製造法及びそれを用いるエポキシ化合物の製造法 |
| JP4546201B2 (ja) | 2004-03-17 | 2010-09-15 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP2006073704A (ja) * | 2004-09-01 | 2006-03-16 | Seiko Epson Corp | 半導体装置の製造方法 |
| US7091118B1 (en) * | 2004-11-16 | 2006-08-15 | Advanced Micro Devices, Inc. | Replacement metal gate transistor with metal-rich silicon layer and method for making the same |
| JP2007095872A (ja) * | 2005-09-28 | 2007-04-12 | Toshiba Corp | 半導体装置の製造方法 |
| JP4997752B2 (ja) * | 2005-12-13 | 2012-08-08 | ソニー株式会社 | 半導体装置の製造方法 |
-
2007
- 2007-07-20 JP JP2007189391A patent/JP5070969B2/ja not_active Expired - Fee Related
-
2008
- 2008-06-24 US US12/144,752 patent/US7592232B2/en not_active Expired - Fee Related
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