JP2011066158A5 - - Google Patents
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- Publication number
- JP2011066158A5 JP2011066158A5 JP2009214865A JP2009214865A JP2011066158A5 JP 2011066158 A5 JP2011066158 A5 JP 2011066158A5 JP 2009214865 A JP2009214865 A JP 2009214865A JP 2009214865 A JP2009214865 A JP 2009214865A JP 2011066158 A5 JP2011066158 A5 JP 2011066158A5
- Authority
- JP
- Japan
- Prior art keywords
- region
- gate electrode
- semiconductor substrate
- drain region
- conductivity type
- Prior art date
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- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims 25
- 239000000758 substrate Substances 0.000 claims 14
- 230000015572 biosynthetic process Effects 0.000 claims 6
- 239000012535 impurity Substances 0.000 claims 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 3
- 229910021332 silicide Inorganic materials 0.000 claims 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 3
- 229910052710 silicon Inorganic materials 0.000 claims 3
- 239000010703 silicon Substances 0.000 claims 3
- 238000002955 isolation Methods 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- 238000005530 etching Methods 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 238000000059 patterning Methods 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009214865A JP2011066158A (ja) | 2009-09-16 | 2009-09-16 | 半導体装置およびその製造方法 |
| US12/874,172 US20110062517A1 (en) | 2009-09-16 | 2010-09-01 | Semiconductor device and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009214865A JP2011066158A (ja) | 2009-09-16 | 2009-09-16 | 半導体装置およびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2011066158A JP2011066158A (ja) | 2011-03-31 |
| JP2011066158A5 true JP2011066158A5 (enExample) | 2011-10-27 |
Family
ID=43729649
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009214865A Pending JP2011066158A (ja) | 2009-09-16 | 2009-09-16 | 半導体装置およびその製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US20110062517A1 (enExample) |
| JP (1) | JP2011066158A (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8377756B1 (en) * | 2011-07-26 | 2013-02-19 | General Electric Company | Silicon-carbide MOSFET cell structure and method for forming same |
| JP6269588B2 (ja) * | 2015-06-15 | 2018-01-31 | 株式会社豊田中央研究所 | 半導体装置 |
| US9887288B2 (en) * | 2015-12-02 | 2018-02-06 | Texas Instruments Incorporated | LDMOS device with body diffusion self-aligned to gate |
| US9941171B1 (en) * | 2016-11-18 | 2018-04-10 | Monolithic Power Systems, Inc. | Method for fabricating LDMOS with reduced source region |
| US11705490B2 (en) * | 2021-02-08 | 2023-07-18 | Applied Materials, Inc. | Graded doping in power devices |
| US20240047460A1 (en) * | 2022-08-03 | 2024-02-08 | Vanguard International Semiconductor Corporation | Semiconductor device and fabrication method thereof |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2582779B2 (ja) * | 1987-05-25 | 1997-02-19 | 株式会社東芝 | 半導体装置の製造方法 |
| JPH09306866A (ja) * | 1996-05-16 | 1997-11-28 | Sony Corp | 半導体装置の製造方法 |
| KR100223927B1 (ko) * | 1996-07-31 | 1999-10-15 | 구본준 | 전계 효과 트랜지스터 및 그 제조방법 |
| US6548874B1 (en) * | 1999-10-27 | 2003-04-15 | Texas Instruments Incorporated | Higher voltage transistors for sub micron CMOS processes |
| JP2002270825A (ja) * | 2001-03-08 | 2002-09-20 | Hitachi Ltd | 電界効果トランジスタ及び半導体装置の製造方法 |
| JP2003209121A (ja) * | 2002-01-16 | 2003-07-25 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| JP2004014574A (ja) * | 2002-06-03 | 2004-01-15 | Semiconductor Leading Edge Technologies Inc | 半導体装置の製造方法 |
| KR100510541B1 (ko) * | 2003-08-11 | 2005-08-26 | 삼성전자주식회사 | 고전압 트랜지스터 및 그 제조 방법 |
| JP2005327827A (ja) * | 2004-05-13 | 2005-11-24 | Renesas Technology Corp | 半導体装置およびその製造方法 |
| US7125777B2 (en) * | 2004-07-15 | 2006-10-24 | Fairchild Semiconductor Corporation | Asymmetric hetero-doped high-voltage MOSFET (AH2MOS) |
| JP4703196B2 (ja) * | 2005-01-18 | 2011-06-15 | 株式会社東芝 | 半導体装置 |
| JP2009124085A (ja) * | 2007-11-19 | 2009-06-04 | Toshiba Corp | 半導体装置 |
| JP2009164460A (ja) * | 2008-01-09 | 2009-07-23 | Renesas Technology Corp | 半導体装置 |
-
2009
- 2009-09-16 JP JP2009214865A patent/JP2011066158A/ja active Pending
-
2010
- 2010-09-01 US US12/874,172 patent/US20110062517A1/en not_active Abandoned