TWI456759B - 具有被動閘極之電晶體及製造其之方法 - Google Patents

具有被動閘極之電晶體及製造其之方法 Download PDF

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Publication number
TWI456759B
TWI456759B TW098129558A TW98129558A TWI456759B TW I456759 B TWI456759 B TW I456759B TW 098129558 A TW098129558 A TW 098129558A TW 98129558 A TW98129558 A TW 98129558A TW I456759 B TWI456759 B TW I456759B
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Taiwan
Prior art keywords
gate
forming
transistor
drain
passive
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TW098129558A
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TW201021210A (en
Inventor
Werner Juengling
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Micron Technology Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H01L29/7851—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET with the body tied to the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
    • H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET

Claims (24)

  1. 一種電子裝置，其包含：一電晶體，其包含：一源極；一汲極；一通道區，其在該源極與該汲極之間延伸，其中該源極與該汲極垂直地安置於該通道區上面；一閘極，其在該電晶體之一第一垂直側壁上接近該通道區安置；及一導電構件，其在該電晶體之一第二垂直側壁上在該通道區對面與該閘極相對地安置，其中該導電構件不與該源極、該汲極或該源極與該汲極兩者重疊，其中該導電構件之頂部於該源極與該汲極之下。
  2. 如請求項1之裝置，其中該導電構件不與該源極或該汲極重疊。
  3. 如請求項1之裝置，其中該導電構件係藉由一電介質而與該通道隔離。
  4. 如請求項1之裝置，其中該電晶體包含：自一基板大體垂直升起之一第一支腿；及自該基板大體垂直升起之一第二支腿。
  5. 如請求項4之裝置，其中該源極接近該第一支腿之一遠端部分安置且該汲極接近該第二支腿之一遠端部分安置。
  6. 如請求項1之裝置，其中該導電構件及該閘極由一電晶 體列共享。
  7. 如請求項6之裝置，其中該導電構件係耦合至由其他電晶體列共享之其他導電構件。
  8. 如請求項6之裝置，其中該閘極不耦合至由其他電晶體列共享之閘極。
  9. 一種製造一電子裝置之方法，其包含：在一半導電材料中形成一上摻雜區；由該半導電材料形成一構件，其中該構件自一基板大體垂直升起；接近該構件形成一主動閘極；及接近該構件形成一被動閘極，其中該被動閘極係安置於該上摻雜區上面。
  10. 如請求項9之方法，其中形成該構件包含形成一鰭。
  11. 如請求項10之方法，其中形成該鰭包含形成一對支腿。
  12. 如請求項9之方法，其中由在此相同步驟或若干相同步驟期間沈積之相同材料或若干相同材料形成該主動閘極及該被動閘極。
  13. 如請求項9之方法，其中形成該構件包含：在該構件之一個側上形成一第一溝槽；在該第一溝槽上方形成一第一遮罩；及在該構件之一相對側上形成一第二溝槽，其中該第二溝槽比該第一溝槽深。
  14. 如請求項13之方法，其中形成該被動閘電極包含：在該主動閘極及該第一溝槽上方形成一第二遮罩；及 使該被動閘極凹入於該上摻雜區下面。
  15. 如請求項14之方法，其中在使該被動閘極凹入時接近該第二溝槽之底部安置該第二遮罩之一部分。
  16. 如請求項9之方法，其中形成該被動閘極包含：形成覆蓋該主動閘極之一遮罩；及蝕刻該被動閘極。
  17. 如請求項9之方法，其中在該構件之一第二側之前形成該構件之一第一側。
  18. 如請求項17之方法，其中在形成該構件之該第二側之前接近該構件之該第一側形成該被動閘極。
  19. 如請求項17之方法，其中在該主動閘極之前形成該被動閘極。
  20. 一種電子裝置，其包含：一電晶體陣列，該陣列包含：複數個電晶體列，每一列包含：複數個鰭，其具有一摻雜遠端部分，其中該複數個鰭中之每一鰭包含兩個支腿；一第一閘極，其沿該複數個鰭之一第一側延伸；及一第二閘極，其沿該複數個鰭之一第二側延伸，其中該第二閘極不與該摻雜遠端部分重疊。
  21. 如請求項20之裝置，其中該第一閘極不與該摻雜遠端部分重疊。
  22. 如請求項20之裝置，其中該複數個電晶體列中之該等電晶體列係與毗鄰電晶體列反射對稱。
  23. 如請求項20之裝置，其中複數個電晶體列中之該等電晶體列係與毗鄰電晶體列旋轉對稱。
  24. 如請求項20之裝置，其中該第二閘極在該複數個電晶體列中之毗鄰電晶體列之間延伸。
TW098129558A 2008-09-15 2009-09-02 具有被動閘極之電晶體及製造其之方法 TWI456759B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/210,305 US8148776B2 (en) 2008-09-15 2008-09-15 Transistor with a passive gate

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TWI456759B true TWI456759B (zh) 2014-10-11

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US (1) US8148776B2 (zh)
KR (1) KR101626178B1 (zh)
CN (1) CN102160158B (zh)
TW (1) TWI456759B (zh)
WO (1) WO2010030493A2 (zh)

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WO2010030493A2 (en) 2010-03-18
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