CN101355104B - 半导体装置及其制造方法 - Google Patents

半导体装置及其制造方法 Download PDF

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Publication number
CN101355104B
CN101355104B CN200810144725.2A CN200810144725A CN101355104B CN 101355104 B CN101355104 B CN 101355104B CN 200810144725 A CN200810144725 A CN 200810144725A CN 101355104 B CN101355104 B CN 101355104B
Authority
CN
China
Prior art keywords
groove portion
gate
source region
drain region
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN200810144725.2A
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English (en)
Chinese (zh)
Other versions
CN101355104A (zh
Inventor
桥本雅幸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ablic Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Publication of CN101355104A publication Critical patent/CN101355104A/zh
Application granted granted Critical
Publication of CN101355104B publication Critical patent/CN101355104B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/292—Non-planar channels of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/025—Manufacture or treatment forming recessed gates, e.g. by using local oxidation
    • H10D64/027—Manufacture or treatment forming recessed gates, e.g. by using local oxidation by etching at gate locations

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN200810144725.2A 2007-07-27 2008-07-25 半导体装置及其制造方法 Expired - Fee Related CN101355104B (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2007-195493 2007-07-27
JP2007195493 2007-07-27
JP2007195493 2007-07-27
JP2008174498A JP5314949B2 (ja) 2007-07-27 2008-07-03 半導体装置の製造方法
JP2008-174498 2008-07-03
JP2008174498 2008-07-03

Publications (2)

Publication Number Publication Date
CN101355104A CN101355104A (zh) 2009-01-28
CN101355104B true CN101355104B (zh) 2015-05-20

Family

ID=40307796

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200810144725.2A Expired - Fee Related CN101355104B (zh) 2007-07-27 2008-07-25 半导体装置及其制造方法

Country Status (4)

Country Link
JP (2) JP5314949B2 (enExample)
KR (1) KR101546537B1 (enExample)
CN (1) CN101355104B (enExample)
TW (1) TWI445094B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5498107B2 (ja) 2009-09-24 2014-05-21 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP5378925B2 (ja) 2009-09-24 2013-12-25 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US8558320B2 (en) * 2009-12-15 2013-10-15 Qualcomm Incorporated Systems and methods employing a physically asymmetric semiconductor device having symmetrical electrical behavior
JP2012204799A (ja) * 2011-03-28 2012-10-22 Toshiba Corp 半導体記憶装置及びその製造方法
CN103280455B (zh) * 2013-04-28 2016-05-18 苏州市职业大学 横向扩散型低导通电阻mos器件
CN104465726B (zh) * 2013-09-17 2017-08-11 世界先进积体电路股份有限公司 半导体装置及其制造方法
US9773902B2 (en) 2013-11-25 2017-09-26 Vanguard International Semiconductor Corporation Trench-gate semiconductor device and method for forming the same
JP2019016668A (ja) * 2017-07-05 2019-01-31 三菱電機株式会社 炭化珪素半導体装置並びにその製造方法及び電力変換装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6201278B1 (en) * 1996-10-30 2001-03-13 Advanced Micro Devices, Inc. Trench transistor with insulative spacers
US6956263B1 (en) * 1999-12-28 2005-10-18 Intel Corporation Field effect transistor structure with self-aligned raised source/drain extensions

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0770713B2 (ja) * 1987-02-12 1995-07-31 松下電器産業株式会社 Ｍｏｓ型半導体装置及びその製造方法
JPH0223670A (ja) * 1988-07-12 1990-01-25 Seiko Epson Corp 半導体装置
JPH02134871A (ja) * 1988-11-15 1990-05-23 Mitsubishi Electric Corp 半導体装置
JPH02166771A (ja) * 1988-12-20 1990-06-27 Ricoh Co Ltd 半導体集積回路装置
JPH033272A (ja) * 1989-05-30 1991-01-09 Mitsubishi Electric Corp 半導体装置
JPH0575121A (ja) * 1991-09-18 1993-03-26 Fujitsu Ltd 半導体装置
JPH05160401A (ja) * 1991-12-05 1993-06-25 Sharp Corp Ｍｏｓトランジスタ
JPH08264764A (ja) * 1995-03-22 1996-10-11 Toshiba Corp 半導体装置
JP4031677B2 (ja) * 2002-07-05 2008-01-09 シャープ株式会社 半導体装置の製造方法
JP5110776B2 (ja) * 2004-07-01 2012-12-26 セイコーインスツル株式会社 半導体装置の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6201278B1 (en) * 1996-10-30 2001-03-13 Advanced Micro Devices, Inc. Trench transistor with insulative spacers
US6956263B1 (en) * 1999-12-28 2005-10-18 Intel Corporation Field effect transistor structure with self-aligned raised source/drain extensions

Also Published As

Publication number Publication date
JP2009054999A (ja) 2009-03-12
KR101546537B1 (ko) 2015-08-21
JP5567711B2 (ja) 2014-08-06
TWI445094B (zh) 2014-07-11
CN101355104A (zh) 2009-01-28
JP5314949B2 (ja) 2013-10-16
KR20090012160A (ko) 2009-02-02
JP2013179333A (ja) 2013-09-09
TW200924072A (en) 2009-06-01

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TR01 Transfer of patent right

Effective date of registration: 20160323

Address after: Chiba County, Japan

Patentee after: DynaFine Semiconductor Co.,Ltd.

Address before: Chiba, Chiba, Japan

Patentee before: Seiko Instruments Inc.

CP01 Change in the name or title of a patent holder
CP01 Change in the name or title of a patent holder

Address after: Chiba County, Japan

Patentee after: ABLIC Inc.

Address before: Chiba County, Japan

Patentee before: DynaFine Semiconductor Co.,Ltd.

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20150520

Termination date: 20210725