TWI445094B - 半導體裝置及其製造方法 - Google Patents

半導體裝置及其製造方法 Download PDF

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Publication number
TWI445094B
TWI445094B TW097128181A TW97128181A TWI445094B TW I445094 B TWI445094 B TW I445094B TW 097128181 A TW097128181 A TW 097128181A TW 97128181 A TW97128181 A TW 97128181A TW I445094 B TWI445094 B TW I445094B
Authority
TW
Taiwan
Prior art keywords
trench
gate
source region
region
planar
Prior art date
Application number
TW097128181A
Other languages
English (en)
Chinese (zh)
Other versions
TW200924072A (en
Inventor
Masayuki Hashitani
Original Assignee
Seiko Instr Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instr Inc filed Critical Seiko Instr Inc
Publication of TW200924072A publication Critical patent/TW200924072A/zh
Application granted granted Critical
Publication of TWI445094B publication Critical patent/TWI445094B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/292—Non-planar channels of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/025—Manufacture or treatment forming recessed gates, e.g. by using local oxidation
    • H10D64/027—Manufacture or treatment forming recessed gates, e.g. by using local oxidation by etching at gate locations

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW097128181A 2007-07-27 2008-07-24 半導體裝置及其製造方法 TWI445094B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007195493 2007-07-27
JP2008174498A JP5314949B2 (ja) 2007-07-27 2008-07-03 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
TW200924072A TW200924072A (en) 2009-06-01
TWI445094B true TWI445094B (zh) 2014-07-11

Family

ID=40307796

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097128181A TWI445094B (zh) 2007-07-27 2008-07-24 半導體裝置及其製造方法

Country Status (4)

Country Link
JP (2) JP5314949B2 (enExample)
KR (1) KR101546537B1 (enExample)
CN (1) CN101355104B (enExample)
TW (1) TWI445094B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5378925B2 (ja) 2009-09-24 2013-12-25 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP5498107B2 (ja) 2009-09-24 2014-05-21 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US8558320B2 (en) * 2009-12-15 2013-10-15 Qualcomm Incorporated Systems and methods employing a physically asymmetric semiconductor device having symmetrical electrical behavior
JP2012204799A (ja) * 2011-03-28 2012-10-22 Toshiba Corp 半導体記憶装置及びその製造方法
CN103280455B (zh) * 2013-04-28 2016-05-18 苏州市职业大学 横向扩散型低导通电阻mos器件
CN104465726B (zh) * 2013-09-17 2017-08-11 世界先进积体电路股份有限公司 半导体装置及其制造方法
US9773902B2 (en) 2013-11-25 2017-09-26 Vanguard International Semiconductor Corporation Trench-gate semiconductor device and method for forming the same
JP2019016668A (ja) * 2017-07-05 2019-01-31 三菱電機株式会社 炭化珪素半導体装置並びにその製造方法及び電力変換装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0770713B2 (ja) * 1987-02-12 1995-07-31 松下電器産業株式会社 Ｍｏｓ型半導体装置及びその製造方法
JPH0223670A (ja) * 1988-07-12 1990-01-25 Seiko Epson Corp 半導体装置
JPH02134871A (ja) * 1988-11-15 1990-05-23 Mitsubishi Electric Corp 半導体装置
JPH02166771A (ja) * 1988-12-20 1990-06-27 Ricoh Co Ltd 半導体集積回路装置
JPH033272A (ja) * 1989-05-30 1991-01-09 Mitsubishi Electric Corp 半導体装置
JPH0575121A (ja) * 1991-09-18 1993-03-26 Fujitsu Ltd 半導体装置
JPH05160401A (ja) * 1991-12-05 1993-06-25 Sharp Corp Ｍｏｓトランジスタ
JPH08264764A (ja) * 1995-03-22 1996-10-11 Toshiba Corp 半導体装置
US6100146A (en) * 1996-10-30 2000-08-08 Advanced Micro Devices, Inc. Method of forming trench transistor with insulative spacers
US6956263B1 (en) * 1999-12-28 2005-10-18 Intel Corporation Field effect transistor structure with self-aligned raised source/drain extensions
JP4031677B2 (ja) * 2002-07-05 2008-01-09 シャープ株式会社 半導体装置の製造方法
JP5110776B2 (ja) * 2004-07-01 2012-12-26 セイコーインスツル株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
KR20090012160A (ko) 2009-02-02
JP2009054999A (ja) 2009-03-12
JP5314949B2 (ja) 2013-10-16
KR101546537B1 (ko) 2015-08-21
CN101355104A (zh) 2009-01-28
JP2013179333A (ja) 2013-09-09
JP5567711B2 (ja) 2014-08-06
TW200924072A (en) 2009-06-01
CN101355104B (zh) 2015-05-20

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