KR101546537B1 - 반도체 소자 및 그 제조 방법 - Google Patents

반도체 소자 및 그 제조 방법 Download PDF

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Publication number
KR101546537B1
KR101546537B1 KR1020080072872A KR20080072872A KR101546537B1 KR 101546537 B1 KR101546537 B1 KR 101546537B1 KR 1020080072872 A KR1020080072872 A KR 1020080072872A KR 20080072872 A KR20080072872 A KR 20080072872A KR 101546537 B1 KR101546537 B1 KR 101546537B1
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KR
South Korea
Prior art keywords
drain region
source region
trench
gate
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1020080072872A
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English (en)
Korean (ko)
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KR20090012160A (ko
Inventor
마사유키 하시타니
Original Assignee
세이코 인스트루 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 세이코 인스트루 가부시키가이샤 filed Critical 세이코 인스트루 가부시키가이샤
Publication of KR20090012160A publication Critical patent/KR20090012160A/ko
Application granted granted Critical
Publication of KR101546537B1 publication Critical patent/KR101546537B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/292—Non-planar channels of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/025—Manufacture or treatment forming recessed gates, e.g. by using local oxidation
    • H10D64/027—Manufacture or treatment forming recessed gates, e.g. by using local oxidation by etching at gate locations

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020080072872A 2007-07-27 2008-07-25 반도체 소자 및 그 제조 방법 Expired - Fee Related KR101546537B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007195493 2007-07-27
JPJP-P-2007-00195493 2007-07-27
JPJP-P-2008-00174498 2008-07-03
JP2008174498A JP5314949B2 (ja) 2007-07-27 2008-07-03 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
KR20090012160A KR20090012160A (ko) 2009-02-02
KR101546537B1 true KR101546537B1 (ko) 2015-08-21

Family

ID=40307796

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020080072872A Expired - Fee Related KR101546537B1 (ko) 2007-07-27 2008-07-25 반도체 소자 및 그 제조 방법

Country Status (4)

Country Link
JP (2) JP5314949B2 (enExample)
KR (1) KR101546537B1 (enExample)
CN (1) CN101355104B (enExample)
TW (1) TWI445094B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5498107B2 (ja) 2009-09-24 2014-05-21 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP5378925B2 (ja) 2009-09-24 2013-12-25 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US8558320B2 (en) * 2009-12-15 2013-10-15 Qualcomm Incorporated Systems and methods employing a physically asymmetric semiconductor device having symmetrical electrical behavior
JP2012204799A (ja) * 2011-03-28 2012-10-22 Toshiba Corp 半導体記憶装置及びその製造方法
CN103280455B (zh) * 2013-04-28 2016-05-18 苏州市职业大学 横向扩散型低导通电阻mos器件
CN104465726B (zh) * 2013-09-17 2017-08-11 世界先进积体电路股份有限公司 半导体装置及其制造方法
US9773902B2 (en) 2013-11-25 2017-09-26 Vanguard International Semiconductor Corporation Trench-gate semiconductor device and method for forming the same
JP2019016668A (ja) * 2017-07-05 2019-01-31 三菱電機株式会社 炭化珪素半導体装置並びにその製造方法及び電力変換装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0770713B2 (ja) * 1987-02-12 1995-07-31 松下電器産業株式会社 Ｍｏｓ型半導体装置及びその製造方法
JPH0223670A (ja) * 1988-07-12 1990-01-25 Seiko Epson Corp 半導体装置
JPH02134871A (ja) * 1988-11-15 1990-05-23 Mitsubishi Electric Corp 半導体装置
JPH02166771A (ja) * 1988-12-20 1990-06-27 Ricoh Co Ltd 半導体集積回路装置
JPH033272A (ja) * 1989-05-30 1991-01-09 Mitsubishi Electric Corp 半導体装置
JPH0575121A (ja) * 1991-09-18 1993-03-26 Fujitsu Ltd 半導体装置
JPH05160401A (ja) * 1991-12-05 1993-06-25 Sharp Corp Ｍｏｓトランジスタ
JPH08264764A (ja) * 1995-03-22 1996-10-11 Toshiba Corp 半導体装置
US6100146A (en) * 1996-10-30 2000-08-08 Advanced Micro Devices, Inc. Method of forming trench transistor with insulative spacers
US6956263B1 (en) * 1999-12-28 2005-10-18 Intel Corporation Field effect transistor structure with self-aligned raised source/drain extensions
JP4031677B2 (ja) * 2002-07-05 2008-01-09 シャープ株式会社 半導体装置の製造方法
JP5110776B2 (ja) * 2004-07-01 2012-12-26 セイコーインスツル株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
JP2009054999A (ja) 2009-03-12
JP5567711B2 (ja) 2014-08-06
TWI445094B (zh) 2014-07-11
CN101355104A (zh) 2009-01-28
CN101355104B (zh) 2015-05-20
JP5314949B2 (ja) 2013-10-16
KR20090012160A (ko) 2009-02-02
JP2013179333A (ja) 2013-09-09
TW200924072A (en) 2009-06-01

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