JP4711636B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP4711636B2 JP4711636B2 JP2004070784A JP2004070784A JP4711636B2 JP 4711636 B2 JP4711636 B2 JP 4711636B2 JP 2004070784 A JP2004070784 A JP 2004070784A JP 2004070784 A JP2004070784 A JP 2004070784A JP 4711636 B2 JP4711636 B2 JP 4711636B2
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- 239000004065 semiconductor Substances 0.000 title claims description 77
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 239000012535 impurity Substances 0.000 claims description 199
- 238000009792 diffusion process Methods 0.000 claims description 77
- 239000000758 substrate Substances 0.000 claims description 47
- 230000015556 catabolic process Effects 0.000 claims description 17
- 238000002955 isolation Methods 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 5
- 238000009751 slip forming Methods 0.000 claims 1
- 238000000034 method Methods 0.000 description 24
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 230000003071 parasitic effect Effects 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
- H01L29/0878—Impurity concentration or distribution
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1041—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface
- H01L29/1045—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface the doping structure being parallel to the channel length, e.g. DMOS like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/105—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with vertical doping variation
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- H01L29/66007—Multistep manufacturing processes
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- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66659—Lateral single gate silicon transistors with asymmetry in the channel direction, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Element Separation (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
Silicon:シリコン局所酸化法)や、STI法(Shallow Trench
Isolation)といったトレンチ構造などによる素子分離が行われている。
図1は、本発明の第1の実施形態に係る、LOCOS法による素子分離が行われた、オフセット構造を有するMOS型トランジスタを備えた半導体装置の断面図である。図1に示す半導体装置は、表面にウェル拡散層2が設けられた半導体基板1の上に形成されている。半導体基板1は、高耐圧トランジスタ20aを形成するためのベースとなる基板であり、この基板の上には、第1導電型のウェル拡散層2が形成されている。ウェル拡散層2の表面には、素子分離用の絶縁層として、LOCOS酸化膜6aおよび6bが形成されている。
本実施形態では、低濃度不純物領域5aと不純物層7との間に、境界不純物層を設けた半導体装置について説明する。なお、本実施形態に係る半導体装置は、第1の実施形態に係る半導体装置とほぼ同じ構成を有するので、以下では両者の違いについてのみ説明する。
2 ウェル拡散層
3 SiO2膜
4 SiN膜
5a 低濃度不純物領域
5b 高濃度不純物領域
6a,6b LOCOS酸化膜
7 不純物層
8 ゲート絶縁膜
9 ゲート電極
10 境界不純物層
11a ソース拡散層
11b ドレイン拡散層
12 レジストパターン
13 レジストパターン
15 不純物層
20a,20b,20c,20d,20e 高耐圧トランジスタ
30 重なり部
40 高濃度不純物層
50 開口部
Claims (1)
- 高耐圧トランジスタを有する半導体装置を製造する方法であって、
表面が第1導電型の半導体基板に第2導電型の不純物を導入することにより、前記半導体基板の内部に低濃度不純物領域を形成する工程と、
一方が前記低濃度不純物領域の上に位置し、他方が前記低濃度不純物領域が形成されていない領域において素子分離用の絶縁層となる、一対の絶縁膜を前記半導体基板の内部に形成する工程と、
前記低濃度不純物領域の上に形成された前記絶縁膜の上からチャンネルとなるべき領域上の一部にかけての領域を覆うレジストパターンを形成する工程と、
前記レジストパターンおよび前記絶縁膜をマスクとして、前記半導体基板に第1導電型の不純物を導入することにより、前記半導体基板の内部であって、前記低濃度不純物領域と離間した位置に、前記高耐圧トランジスタの閾値電圧を調整するための不純物層を形成する工程と、
前記レジストパターンを除去する工程と、
前記不純物層の上に、ゲート絶縁膜を形成する工程と、
前記ゲート絶縁膜上から、前記一対の絶縁膜のうち前記低濃度不純物領域の上に位置する絶縁膜の上にかけて、ゲート電極を形成する工程と、
前記一対の絶縁膜および前記ゲート電極をマスクとして、前記半導体基板に第2導電型の不純物を導入することにより、前記半導体基板の内部にソース拡散層を構成する不純物領域、および前記低濃度不純物領域とでドレイン拡散層を構成する不純物領域を形成する工程と、
前記ゲート電極を形成する工程の後、熱処理により、前記不純物層および前記低濃度不純物領域に含まれる不純物を、両者が接触するまで前記半導体基板の主面に沿った方向に拡散させる工程とを含み、
前記不純物層は、前記チャンネルとなるべき領域から前記ソース拡散層に重なるように連続的に形成され、
前記不純物層の深さは、前記ソース拡散層および前記低濃度不純物領域より浅く形成されることを特徴とする、半導体装置の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004070784A JP4711636B2 (ja) | 2004-03-12 | 2004-03-12 | 半導体装置の製造方法 |
TW094106390A TW200535950A (en) | 2004-03-12 | 2005-03-03 | Semiconductor device and method for fabricating the same |
US11/072,310 US7196393B2 (en) | 2004-03-12 | 2005-03-07 | Semiconductor device including a high voltage transistor |
KR1020050020596A KR101084490B1 (ko) | 2004-03-12 | 2005-03-11 | 반도체 장치 및 이를 제조하기 위한 방법 |
CNA2005100527699A CN1667837A (zh) | 2004-03-12 | 2005-03-14 | 半导体器件及其制造方法 |
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JP2004070784A JP4711636B2 (ja) | 2004-03-12 | 2004-03-12 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2005260055A JP2005260055A (ja) | 2005-09-22 |
JP4711636B2 true JP4711636B2 (ja) | 2011-06-29 |
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JP2004070784A Expired - Fee Related JP4711636B2 (ja) | 2004-03-12 | 2004-03-12 | 半導体装置の製造方法 |
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Country | Link |
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US (1) | US7196393B2 (ja) |
JP (1) | JP4711636B2 (ja) |
KR (1) | KR101084490B1 (ja) |
CN (1) | CN1667837A (ja) |
TW (1) | TW200535950A (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
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US8174071B2 (en) * | 2008-05-02 | 2012-05-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | High voltage LDMOS transistor |
US8163621B2 (en) | 2008-06-06 | 2012-04-24 | Globalfoundries Singapore Pte. Ltd. | High performance LDMOS device having enhanced dielectric strain layer |
JP4587003B2 (ja) * | 2008-07-03 | 2010-11-24 | セイコーエプソン株式会社 | 半導体装置 |
JP5437602B2 (ja) * | 2008-07-29 | 2014-03-12 | セイコーインスツル株式会社 | 半導体装置およびその製造方法 |
JP2010067955A (ja) * | 2008-08-13 | 2010-03-25 | Seiko Instruments Inc | 半導体装置およびその製造方法 |
JP5452146B2 (ja) * | 2009-09-17 | 2014-03-26 | セイコーインスツル株式会社 | 半導体装置 |
WO2011161748A1 (ja) | 2010-06-21 | 2011-12-29 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
US11888062B2 (en) * | 2021-10-01 | 2024-01-30 | Globalfoundries U.S. Inc. | Extended-drain metal-oxide-semiconductor devices with a silicon-germanium layer beneath a portion of the gate |
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-
2004
- 2004-03-12 JP JP2004070784A patent/JP4711636B2/ja not_active Expired - Fee Related
-
2005
- 2005-03-03 TW TW094106390A patent/TW200535950A/zh unknown
- 2005-03-07 US US11/072,310 patent/US7196393B2/en active Active
- 2005-03-11 KR KR1020050020596A patent/KR101084490B1/ko not_active IP Right Cessation
- 2005-03-14 CN CNA2005100527699A patent/CN1667837A/zh active Pending
Patent Citations (12)
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JPH01123416A (ja) * | 1987-11-06 | 1989-05-16 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
JPH01264262A (ja) * | 1988-04-15 | 1989-10-20 | Toshiba Corp | Mos型電界効果トランジスタ |
JPH06338616A (ja) * | 1993-05-28 | 1994-12-06 | Sanyo Electric Co Ltd | 縦型mos半導体装置及びその製造方法 |
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JPH09223793A (ja) * | 1996-02-16 | 1997-08-26 | Sony Corp | 半導体装置及びその製造方法 |
JP2001068560A (ja) * | 1999-08-30 | 2001-03-16 | Sanyo Electric Co Ltd | 半導体装置の製造方法及び半導体装置 |
JP2001358334A (ja) * | 2000-05-01 | 2001-12-26 | Hynix Semiconductor Inc | 半導体素子及びその製造方法 |
JP2003060199A (ja) * | 2001-08-10 | 2003-02-28 | Sanyo Electric Co Ltd | 半導体装置とその製造方法 |
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KR20060044310A (ko) | 2006-05-16 |
KR101084490B1 (ko) | 2011-11-21 |
TW200535950A (en) | 2005-11-01 |
CN1667837A (zh) | 2005-09-14 |
US7196393B2 (en) | 2007-03-27 |
US20050199962A1 (en) | 2005-09-15 |
JP2005260055A (ja) | 2005-09-22 |
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