JP5492747B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5492747B2 JP5492747B2 JP2010259874A JP2010259874A JP5492747B2 JP 5492747 B2 JP5492747 B2 JP 5492747B2 JP 2010259874 A JP2010259874 A JP 2010259874A JP 2010259874 A JP2010259874 A JP 2010259874A JP 5492747 B2 JP5492747 B2 JP 5492747B2
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- semiconductor device
- insulating film
- type impurity
- gate
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- 239000004065 semiconductor Substances 0.000 title claims description 233
- 239000012535 impurity Substances 0.000 claims description 192
- 238000002955 isolation Methods 0.000 claims description 89
- 239000000758 substrate Substances 0.000 claims description 68
- 229910052751 metal Inorganic materials 0.000 claims description 45
- 239000002184 metal Substances 0.000 claims description 45
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 19
- 229910052710 silicon Inorganic materials 0.000 claims description 19
- 239000010703 silicon Substances 0.000 claims description 19
- 229910052785 arsenic Inorganic materials 0.000 claims description 14
- 229910052787 antimony Inorganic materials 0.000 claims description 12
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 10
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 8
- 229910052746 lanthanum Inorganic materials 0.000 claims description 7
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 6
- 229910052735 hafnium Inorganic materials 0.000 claims description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 2
- 230000004048 modification Effects 0.000 description 58
- 238000012986 modification Methods 0.000 description 58
- 238000004519 manufacturing process Methods 0.000 description 57
- 238000000034 method Methods 0.000 description 45
- 238000002513 implantation Methods 0.000 description 34
- 229910052581 Si3N4 Inorganic materials 0.000 description 24
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 24
- 125000006850 spacer group Chemical group 0.000 description 23
- 230000000694 effects Effects 0.000 description 19
- 238000009792 diffusion process Methods 0.000 description 13
- 238000010438 heat treatment Methods 0.000 description 13
- 239000000463 material Substances 0.000 description 9
- 229910052760 oxygen Inorganic materials 0.000 description 9
- 229910021332 silicide Inorganic materials 0.000 description 9
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 229920001709 polysilazane Polymers 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 238000006386 neutralization reaction Methods 0.000 description 2
- 229910004143 HfON Inorganic materials 0.000 description 1
- 229910004129 HfSiO Inorganic materials 0.000 description 1
- -1 HfSiON Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
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Description
前述のように、従来のn型MISトランジスタを有する半導体装置において、ゲート幅が狭くなるに伴って、閾値電圧が高くなるという問題が発生する原因について、本願発明者が鋭意検討を重ねた結果、次のような知見を得た。
以下、本発明の第1の実施形態に係る半導体装置について、図面を参照しながら説明する。
以下、本発明の第1の実施形態の第1変形例に係る半導体装置について、図面を参照しながら説明する。
以下、本発明の第1の実施形態の第2変形例に係る半導体装置について、図面を参照しながら説明する。
以下、本発明の第1の実施形態の第3変形例に係る半導体装置について、図面を参照しながら説明する。
1a 活性領域
2 犠牲酸化膜
3 シリコン窒化膜
4 トレンチ
6、7 埋め込み絶縁膜
8 p型ウェル領域
9 高誘電率絶縁膜
10 調整用金属膜
11、11a 下地膜
12、12a 高誘電率絶縁膜
13 ゲート絶縁膜用膜
13a ゲート絶縁膜
14、14a 金属含有膜
15、15a シリコン膜
16 ゲート電極用膜
16a ゲート電極
17 n型エクステンション注入領域
18 内側サイドウォールスペーサ
19 外側サイドウォールスペーサ
20 絶縁性サイドウォールスペーサ
21 n型ソース/ドレイン注入領域
22 n型エクステンション領域
23 n型ソース/ドレイン領域
24a 第1のシリサイド膜
24b 第2のシリサイド膜
25、28、28A、28B、28C、34 n型不純物領域
27 第1の埋め込み絶縁膜
29、30、31 第2の埋め込み絶縁膜
32、32A 素子分離領域
33 第1のトレンチ
35 第2のトレンチ
40 レジストパターン
41 レジストマスク
50 半導体基板
50a 活性領域
51 素子分離領域
52 p型ウェル領域
53 高誘電率絶縁膜
54 ゲート絶縁膜
55 金属含有膜
56 シリコン膜
57 ゲート電極
58 n型不純物領域
100 半導体基板
100a 活性領域
101 素子分離領域
102 p型ウェル
103 ゲート絶縁膜
103a 下地膜
103b 高誘電率絶縁膜
104 ゲート電極
104a 金属含有膜
104b シリコン膜
106 n型エクステンション領域
107 絶縁性サイドウォールスペーサ
107a 内側サイドウォールスペーサ
107b 外側サイドウォールスペーサ
109 n型ソース/ドレイン領域
nTr、TrA、TrB n型MISトランジスタ
Claims (15)
- n型MISトランジスタを備えた半導体装置であって、
前記n型MISトランジスタは、
半導体基板における素子分離領域に囲まれた活性領域と、
前記活性領域上及び前記素子分離領域上に形成され、且つ、ハフニウムを含む高誘電率絶縁膜を有するゲート絶縁膜と、
前記ゲート絶縁膜上に形成されたゲート電極と、
前記活性領域における前記ゲート電極の両側に形成されたn型ソース/ドレイン領域と、
前記活性領域における前記素子分離領域に接する部分のうち少なくとも前記ゲート絶縁膜の下側に位置する部分に形成されたn型不純物領域とを備え、
前記高誘電率絶縁膜は、ランタンからなる閾値電圧調整用金属を含むことを特徴とする半導体装置。 - 請求項1に記載の半導体装置において、
前記n型不純物領域は、前記活性領域におけるゲート幅方向の両端部に形成されていることを特徴とする半導体装置。 - 請求項1又は2に記載の半導体装置において、
前記n型不純物領域は、前記活性領域を囲むように形成されていることを特徴とする半導体装置。 - 請求項1〜3のいずれか1項に記載の半導体装置において、
前記素子分離領域は2層構造を有していることを特徴とする半導体装置。 - 請求項4に記載の半導体装置において、
前記n型不純物領域の下面は、前記素子分離領域の上層部分の下面と比べて、同じ深さに又はより深くに位置していることを特徴とする半導体装置。 - 請求項1〜3のいずれか1項に記載の半導体装置において、
前記素子分離領域は単一の絶縁膜から構成されていることを特徴とする半導体装置。 - 請求項1〜6のいずれか1項に記載の半導体装置において、
前記n型不純物領域は、前記n型ソース/ドレイン領域よりも浅く形成されていることを特徴とする半導体装置。 - 請求項1〜6のいずれか1項に記載の半導体装置において、
前記n型不純物領域は、前記n型ソース/ドレイン領域よりも深く形成されていることを特徴とする半導体装置。 - 請求項1〜8のいずれか1項に記載の半導体装置において、
前記n型不純物領域の不純物濃度は、1×1018atoms/cm3 以上で且つ1×1020atoms/cm3 以下であることを特徴とする半導体装置。 - 請求項1〜9のいずれか1項に記載の半導体装置において、
前記n型不純物領域のゲート幅方向の長さは、10nm以上で且つ40nm以下であることを特徴とする半導体装置。 - 請求項1〜10のいずれか1項に記載の半導体装置において、
前記n型不純物領域の前記半導体基板の表面からの深さは、20nm以上で且つ100nm以下であることを特徴とする半導体装置。 - 請求項1〜11のいずれか1項に記載の半導体装置において、
前記活性領域のゲート幅方向の長さは、500nm以下であることを特徴とする半導体装置。 - 請求項1〜12のいずれか1項に記載の半導体装置において、
前記n型不純物領域は、砒素又はアンチモンを含むことを特徴とする半導体装置。 - 請求項1〜13のいずれか1項に記載の半導体装置において、
前記ゲート絶縁膜は、前記高誘電率絶縁膜の下側に形成された下地膜をさらに有することを特徴とする半導体装置。 - 請求項1〜14のいずれか1項に記載の半導体装置において、
前記ゲート電極は、前記ゲート絶縁膜上に形成された金属含有膜と、前記金属含有膜上に形成されたシリコン膜とを有することを特徴とする半導体装置。
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JP2010259874A JP5492747B2 (ja) | 2010-11-22 | 2010-11-22 | 半導体装置 |
PCT/JP2011/002192 WO2012070163A1 (ja) | 2010-11-22 | 2011-04-13 | 半導体装置及びその製造方法 |
US13/649,656 US20130032899A1 (en) | 2010-11-22 | 2012-10-11 | Semiconductor device |
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JP2001135816A (ja) * | 1999-11-10 | 2001-05-18 | Nec Corp | 半導体装置及びその製造方法 |
JP2003078133A (ja) * | 2001-09-03 | 2003-03-14 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
JP2003092386A (ja) * | 2001-09-18 | 2003-03-28 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
JP2003282875A (ja) * | 2002-03-27 | 2003-10-03 | Toshiba Corp | 半導体装置及び半導体装置の製造方法 |
JP3713020B2 (ja) * | 2003-02-17 | 2005-11-02 | 松下電器産業株式会社 | 半導体装置及びその製造方法 |
US6949785B2 (en) * | 2004-01-14 | 2005-09-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Random access memory (RAM) capacitor in shallow trench isolation with improved electrical isolation to overlying gate electrodes |
US7772073B2 (en) * | 2007-09-28 | 2010-08-10 | Tokyo Electron Limited | Semiconductor device containing a buried threshold voltage adjustment layer and method of forming |
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US7943468B2 (en) * | 2008-03-31 | 2011-05-17 | Intel Corporation | Penetrating implant for forming a semiconductor device |
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