JP2006147789A5 - - Google Patents

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Publication number
JP2006147789A5
JP2006147789A5 JP2004334920A JP2004334920A JP2006147789A5 JP 2006147789 A5 JP2006147789 A5 JP 2006147789A5 JP 2004334920 A JP2004334920 A JP 2004334920A JP 2004334920 A JP2004334920 A JP 2004334920A JP 2006147789 A5 JP2006147789 A5 JP 2006147789A5
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JP
Japan
Prior art keywords
conductivity type
deposited film
film
semiconductor device
region
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JP2004334920A
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English (en)
Japanese (ja)
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JP2006147789A (ja
JP4604241B2 (ja
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Priority claimed from JP2004334920A external-priority patent/JP4604241B2/ja
Priority to JP2004334920A priority Critical patent/JP4604241B2/ja
Priority to CNB2005800369547A priority patent/CN100536165C/zh
Priority to PCT/JP2005/018104 priority patent/WO2006054394A1/ja
Priority to EP05788237A priority patent/EP1814162A4/en
Priority to US11/718,036 priority patent/US20090134402A1/en
Priority to KR1020077009697A priority patent/KR101057199B1/ko
Publication of JP2006147789A publication Critical patent/JP2006147789A/ja
Publication of JP2006147789A5 publication Critical patent/JP2006147789A5/ja
Publication of JP4604241B2 publication Critical patent/JP4604241B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2004334920A 2004-11-18 2004-11-18 炭化ケイ素ｍｏｓ電界効果トランジスタおよびその製造方法 Expired - Fee Related JP4604241B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2004334920A JP4604241B2 (ja) 2004-11-18 2004-11-18 炭化ケイ素ｍｏｓ電界効果トランジスタおよびその製造方法
US11/718,036 US20090134402A1 (en) 2004-11-18 2005-09-30 Silicon carbide mos field-effect transistor and process for producing the same
PCT/JP2005/018104 WO2006054394A1 (ja) 2004-11-18 2005-09-30 炭化ケイ素ｍｏｓ電界効果トランジスタおよびその製造方法
EP05788237A EP1814162A4 (en) 2004-11-18 2005-09-30 SILICON CARBIDE MOS FIELD EFFECT TRANSISTOR AND PROCESS FOR ITS MANUFACTURE
CNB2005800369547A CN100536165C (zh) 2004-11-18 2005-09-30 碳化硅mos场效应晶体管以及其制造方法
KR1020077009697A KR101057199B1 (ko) 2004-11-18 2005-09-30 탄화규소 ｍｏｓ 전계 효과 트랜지스터 및 그 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004334920A JP4604241B2 (ja) 2004-11-18 2004-11-18 炭化ケイ素ｍｏｓ電界効果トランジスタおよびその製造方法

Publications (3)

Publication Number Publication Date
JP2006147789A JP2006147789A (ja) 2006-06-08
JP2006147789A5 true JP2006147789A5 (enExample) 2009-03-19
JP4604241B2 JP4604241B2 (ja) 2011-01-05

Family

ID=36406940

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004334920A Expired - Fee Related JP4604241B2 (ja) 2004-11-18 2004-11-18 炭化ケイ素ｍｏｓ電界効果トランジスタおよびその製造方法

Country Status (6)

Country Link
US (1) US20090134402A1 (enExample)
EP (1) EP1814162A4 (enExample)
JP (1) JP4604241B2 (enExample)
KR (1) KR101057199B1 (enExample)
CN (1) CN100536165C (enExample)
WO (1) WO2006054394A1 (enExample)

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* Cited by examiner, † Cited by third party
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EP1566843B1 (en) 2002-10-18 2013-12-18 National Institute of Advanced Industrial Science and Technology Manufacturing method of a silicon carbide semiconductor device
JP5071763B2 (ja) * 2006-10-16 2012-11-14 独立行政法人産業技術総合研究所 炭化ケイ素半導体装置およびその製造方法
US7598567B2 (en) * 2006-11-03 2009-10-06 Cree, Inc. Power switching semiconductor devices including rectifying junction-shunts
JP2008177335A (ja) 2007-01-18 2008-07-31 Fuji Electric Device Technology Co Ltd 炭化珪素絶縁ゲート型半導体装置。
JP5303839B2 (ja) 2007-01-29 2013-10-02 富士電機株式会社 絶縁ゲート炭化珪素半導体装置とその製造方法
JP4786621B2 (ja) * 2007-09-20 2011-10-05 株式会社東芝 半導体装置およびその製造方法
JP2009094203A (ja) * 2007-10-05 2009-04-30 Denso Corp 炭化珪素半導体装置
KR100933383B1 (ko) * 2007-10-26 2009-12-22 한국전기연구원 접합장벽쇼트키 게이트 구조를 갖는 고전압 탄화규소쇼트키 접합형 전계효과 트랜지스터 및 그 제조방법
KR100911883B1 (ko) * 2007-11-09 2009-08-11 한국전기연구원 탄화규소 수직접합형 전계효과 트랜지스터 장치
JP5369464B2 (ja) 2008-03-24 2013-12-18 富士電機株式会社 炭化珪素ｍｏｓ型半導体装置
JP2010056215A (ja) * 2008-08-27 2010-03-11 Nec Electronics Corp 縦型電界効果トランジスタを備える半導体装置及びその製造方法
JP5452062B2 (ja) * 2009-04-08 2014-03-26 三菱電機株式会社 炭化珪素半導体装置の製造方法
US20110024765A1 (en) * 2009-07-31 2011-02-03 General Electric Company Silicon carbide semiconductor structures, devices and methods for making the same
CN102544091A (zh) * 2010-12-17 2012-07-04 浙江大学 新型碳化硅mosfet
US9337268B2 (en) 2011-05-16 2016-05-10 Cree, Inc. SiC devices with high blocking voltage terminated by a negative bevel
JP2012253293A (ja) * 2011-06-07 2012-12-20 Sumitomo Electric Ind Ltd 半導体装置
JP2014520405A (ja) * 2011-06-20 2014-08-21 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 電流アパーチャ垂直電子トランジスタ
DE102011053641A1 (de) * 2011-09-15 2013-03-21 Infineon Technologies Ag SiC-MOSFET mit hoher Kanalbeweglichkeit
JP2014131008A (ja) * 2012-11-29 2014-07-10 Fuji Electric Co Ltd ワイドバンドギャップ半導体装置
WO2014125586A1 (ja) 2013-02-13 2014-08-21 富士電機株式会社 半導体装置
JP5684304B2 (ja) * 2013-02-27 2015-03-11 株式会社東芝 炭化珪素半導体装置
US9425265B2 (en) 2013-08-16 2016-08-23 Cree, Inc. Edge termination technique for high voltage power devices having a negative feature for an improved edge termination structure
TWI559534B (zh) * 2014-11-03 2016-11-21 Hestia Power Inc Silicon carbide field effect transistor
WO2016104264A1 (ja) * 2014-12-25 2016-06-30 富士電機株式会社 半導体装置
JP6965499B2 (ja) * 2016-03-16 2021-11-10 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
DE102016205331A1 (de) * 2016-03-31 2017-10-05 Robert Bosch Gmbh Vertikaler SiC-MOSFET
KR101836256B1 (ko) 2016-06-24 2018-03-08 현대자동차 주식회사 반도체 소자 및 그 제조 방법
JP6946824B2 (ja) 2017-07-28 2021-10-06 富士電機株式会社 半導体装置および半導体装置の製造方法
US10608102B2 (en) * 2017-09-29 2020-03-31 Electronics And Telecommunications Research Institute Semiconductor device having a drain electrode contacting an epi material inside a through-hole and method of manufacturing the same
EP3474331A1 (en) 2017-10-19 2019-04-24 Infineon Technologies Austria AG Semiconductor device and method for fabricating a semiconductor device
US10957768B1 (en) * 2019-10-07 2021-03-23 Infineon Technologies Ag Silicon carbide device with an implantation tail compensation region
CN116646401B (zh) * 2023-07-19 2024-01-23 成都蓉矽半导体有限公司 一种碳化硅异质结的共源共栅mosfet器件
CN117712122B (zh) * 2024-02-08 2024-04-26 深圳天狼芯半导体有限公司 碳化硅igbt的结构、制造方法及电子设备
CN119584613A (zh) * 2025-02-06 2025-03-07 华通芯电(南昌)电子科技有限公司 一种SiC MOSFET器件及其制备方法

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Publication number Priority date Publication date Assignee Title
SE9704149D0 (sv) * 1997-11-13 1997-11-13 Abb Research Ltd A semiconductor device of SiC and a transistor of SiC having an insulated gate
US6521514B1 (en) * 1999-11-17 2003-02-18 North Carolina State University Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates
DE10026925C2 (de) * 2000-05-30 2002-04-18 Infineon Technologies Ag Feldeffektgesteuertes, vertikales Halbleiterbauelement
US6956238B2 (en) * 2000-10-03 2005-10-18 Cree, Inc. Silicon carbide power metal-oxide semiconductor field effect transistors having a shorting channel and methods of fabricating silicon carbide metal-oxide semiconductor field effect transistors having a shorting channel
US6552363B2 (en) * 2001-09-18 2003-04-22 International Rectifier Corporation Polysilicon FET built on silicon carbide diode substrate
JP4188637B2 (ja) * 2002-08-05 2008-11-26 独立行政法人産業技術総合研究所 半導体装置
EP1566843B1 (en) * 2002-10-18 2013-12-18 National Institute of Advanced Industrial Science and Technology Manufacturing method of a silicon carbide semiconductor device
JP3944575B2 (ja) * 2003-03-18 2007-07-11 独立行政法人産業技術総合研究所 炭化珪素半導体装置

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