JP2007525831A5 - - Google Patents

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Publication number
JP2007525831A5
JP2007525831A5 JP2006547004A JP2006547004A JP2007525831A5 JP 2007525831 A5 JP2007525831 A5 JP 2007525831A5 JP 2006547004 A JP2006547004 A JP 2006547004A JP 2006547004 A JP2006547004 A JP 2006547004A JP 2007525831 A5 JP2007525831 A5 JP 2007525831A5
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JP
Japan
Prior art keywords
forming
regions
conductivity type
semiconductor
buried layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006547004A
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English (en)
Japanese (ja)
Other versions
JP2007525831A (ja
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Publication date
Priority claimed from US10/750,125 external-priority patent/US7084485B2/en
Application filed filed Critical
Publication of JP2007525831A publication Critical patent/JP2007525831A/ja
Publication of JP2007525831A5 publication Critical patent/JP2007525831A5/ja
Pending legal-status Critical Current

Links

JP2006547004A 2003-12-31 2004-11-18 半導体部品の製造方法及びその方法により製造される半導体部品 Pending JP2007525831A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/750,125 US7084485B2 (en) 2003-12-31 2003-12-31 Method of manufacturing a semiconductor component, and semiconductor component formed thereby
PCT/US2004/038757 WO2005065089A2 (en) 2003-12-31 2004-11-18 Method of manufacturing a semiconductor component, and semiconductor component formed thereby

Publications (2)

Publication Number Publication Date
JP2007525831A JP2007525831A (ja) 2007-09-06
JP2007525831A5 true JP2007525831A5 (enExample) 2007-12-06

Family

ID=34711212

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006547004A Pending JP2007525831A (ja) 2003-12-31 2004-11-18 半導体部品の製造方法及びその方法により製造される半導体部品

Country Status (7)

Country Link
US (1) US7084485B2 (enExample)
EP (1) EP1702349A4 (enExample)
JP (1) JP2007525831A (enExample)
KR (1) KR20060111650A (enExample)
CN (1) CN101263600B (enExample)
TW (1) TWI370520B (enExample)
WO (1) WO2005065089A2 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7358545B2 (en) * 2005-08-10 2008-04-15 United Microelectronics Corp. Bipolar junction transistor
US7772060B2 (en) * 2006-06-21 2010-08-10 Texas Instruments Deutschland Gmbh Integrated SiGe NMOS and PMOS transistors
US8405127B2 (en) * 2008-02-20 2013-03-26 International Business Machines Corporation Method and apparatus for fabricating a heterojunction bipolar transistor
JP2011528187A (ja) * 2008-07-14 2011-11-10 エヌエックスピー ビー ヴィ トランジスタデバイス及びその製造方法
US8053866B2 (en) * 2009-08-06 2011-11-08 Freescale Semiconductor, Inc. Varactor structures
CN102403343B (zh) * 2010-09-08 2013-07-24 上海华虹Nec电子有限公司 BiCMOS工艺中的垂直寄生型PNP器件及制造方法
CN102544081B (zh) * 2010-12-16 2014-10-08 上海华虹宏力半导体制造有限公司 锗硅异质结npn三极管及制造方法
CN102412274B (zh) * 2011-01-13 2014-02-26 上海华虹宏力半导体制造有限公司 锗硅hbt工艺中垂直寄生型pnp器件及制造方法
CN102655170B (zh) * 2011-03-04 2014-08-13 上海华虹宏力半导体制造有限公司 锗硅异质结双极晶体管工艺中可变电容及制造方法
CN102956480A (zh) * 2011-08-31 2013-03-06 上海华虹Nec电子有限公司 有赝埋层的锗硅hbt降低集电极电阻的制造方法及器件
CN102412275B (zh) * 2011-09-22 2013-06-12 上海华虹Nec电子有限公司 锗硅BiCMOS工艺中纵向PNP器件及制作方法
CN102412287B (zh) * 2011-11-08 2013-07-24 上海华虹Nec电子有限公司 锗硅hbt器件及其制造方法
CN103050518B (zh) * 2012-01-06 2015-04-08 上海华虹宏力半导体制造有限公司 锗硅异质结双极型晶体管及其制造方法
US10431654B2 (en) * 2015-06-25 2019-10-01 International Business Machines Corporation Extrinsic base doping for bipolar junction transistors

Family Cites Families (21)

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Publication number Priority date Publication date Assignee Title
JPS55132052A (en) * 1979-03-31 1980-10-14 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor device
US4674173A (en) * 1985-06-28 1987-06-23 Texas Instruments Incorporated Method for fabricating bipolar transistor
JPH02283028A (ja) * 1988-12-23 1990-11-20 Fujitsu Ltd 半導体装置及びその製造方法
GB2243717B (en) * 1990-05-01 1994-06-15 Stc Plc Bipolar transistor device
US5061646A (en) 1990-06-29 1991-10-29 Motorola, Inc. Method for forming a self-aligned bipolar transistor
JP2746499B2 (ja) * 1992-05-15 1998-05-06 三菱電機株式会社 半導体装置及びその製造方法
WO1995005679A1 (en) * 1993-08-17 1995-02-23 Peter Fred Blomley Bipolar transistors and method of making the same
US5465006A (en) * 1994-07-15 1995-11-07 Hewlett-Packard Company Bipolar stripe transistor structure
US5569613A (en) * 1995-02-01 1996-10-29 United Microelectronics Corp. Method of making bipolar junction transistor
JP3186691B2 (ja) * 1998-04-07 2001-07-11 日本電気株式会社 半導体装置及びその形成方法
JPH11312687A (ja) * 1998-04-30 1999-11-09 Toshiba Corp 半導体装置およびその製造方法
US6239477B1 (en) * 1998-10-07 2001-05-29 Texas Instruments Incorporated Self-aligned transistor contact for epitaxial layers
JP2000252294A (ja) * 1999-03-01 2000-09-14 Nec Corp 半導体装置及びその製造方法
JP3322239B2 (ja) * 1999-04-30 2002-09-09 日本電気株式会社 半導体装置の製造方法
WO2001004960A1 (en) * 1999-07-07 2001-01-18 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for the same manufacturing
JP3748744B2 (ja) * 1999-10-18 2006-02-22 Ｎｅｃエレクトロニクス株式会社 半導体装置
JP2002141476A (ja) * 2000-11-07 2002-05-17 Hitachi Ltd ＢｉＣＭＯＳ半導体集積回路装置およびその製造方法
JP3621359B2 (ja) * 2001-05-25 2005-02-16 Ｎｅｃエレクトロニクス株式会社 半導体装置及びその製造方法
JP2003007713A (ja) * 2001-06-22 2003-01-10 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
FR2829288A1 (fr) * 2001-09-06 2003-03-07 St Microelectronics Sa Structure de contact sur une region profonde formee dans un substrat semiconducteur
JP3761162B2 (ja) * 2002-03-27 2006-03-29 ローム株式会社 バイポーラトランジスタ及びこれを用いた半導体装置

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