JPH11243195A5 - - Google Patents

Info

Publication number
JPH11243195A5
JPH11243195A5 JP1998185302A JP18530298A JPH11243195A5 JP H11243195 A5 JPH11243195 A5 JP H11243195A5 JP 1998185302 A JP1998185302 A JP 1998185302A JP 18530298 A JP18530298 A JP 18530298A JP H11243195 A5 JPH11243195 A5 JP H11243195A5
Authority
JP
Japan
Prior art keywords
trench
semiconductor substrate
insulating film
gate electrode
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1998185302A
Other languages
English (en)
Japanese (ja)
Other versions
JP3892588B2 (ja
JPH11243195A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP18530298A priority Critical patent/JP3892588B2/ja
Priority claimed from JP18530298A external-priority patent/JP3892588B2/ja
Publication of JPH11243195A publication Critical patent/JPH11243195A/ja
Publication of JPH11243195A5 publication Critical patent/JPH11243195A5/ja
Application granted granted Critical
Publication of JP3892588B2 publication Critical patent/JP3892588B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP18530298A 1997-12-26 1998-06-30 半導体装置およびその製造方法 Expired - Fee Related JP3892588B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18530298A JP3892588B2 (ja) 1997-12-26 1998-06-30 半導体装置およびその製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP36681097 1997-12-26
JP9-366810 1997-12-26
JP18530298A JP3892588B2 (ja) 1997-12-26 1998-06-30 半導体装置およびその製造方法

Publications (3)

Publication Number Publication Date
JPH11243195A JPH11243195A (ja) 1999-09-07
JPH11243195A5 true JPH11243195A5 (enExample) 2005-05-26
JP3892588B2 JP3892588B2 (ja) 2007-03-14

Family

ID=26503022

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18530298A Expired - Fee Related JP3892588B2 (ja) 1997-12-26 1998-06-30 半導体装置およびその製造方法

Country Status (1)

Country Link
JP (1) JP3892588B2 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001144032A (ja) * 1999-11-17 2001-05-25 Tokyo Electron Ltd ＴｉＳｉＮ薄膜およびその成膜方法、半導体装置およびその製造方法、ならびにＴｉＳｉＮ薄膜の成膜装置
KR100338783B1 (en) 2000-10-28 2002-06-01 Samsung Electronics Co Ltd Semiconductor device having expanded effective width of active region and fabricating method thereof
JP2002184957A (ja) * 2000-12-13 2002-06-28 Sony Corp 半導体装置およびその製造方法
US20030098489A1 (en) 2001-11-29 2003-05-29 International Business Machines Corporation High temperature processing compatible metal gate electrode for pFETS and methods for fabrication
JP4567969B2 (ja) * 2003-10-28 2010-10-27 東部エレクトロニクス株式会社 半導体素子のトランジスタ製造方法
JP2006253547A (ja) * 2005-03-14 2006-09-21 Oki Electric Ind Co Ltd 半導体記憶装置及びその製造方法
JP5063913B2 (ja) * 2005-04-04 2012-10-31 三星電子株式会社 多層ゲート構造を備える半導体素子及びそれの製造方法
KR100680415B1 (ko) * 2005-05-31 2007-02-08 주식회사 하이닉스반도체 반도체 소자의 제조 방법
JP4309872B2 (ja) 2005-06-17 2009-08-05 株式会社東芝 不揮発性半導体記憶装置およびその製造方法
JP2007194333A (ja) * 2006-01-18 2007-08-02 Elpida Memory Inc 半導体装置の製造方法
CN103187256B (zh) * 2011-12-29 2015-07-08 中芯国际集成电路制造(上海)有限公司 金属栅极的形成方法

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