JP3892588B2 - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

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Publication number
JP3892588B2
JP3892588B2 JP18530298A JP18530298A JP3892588B2 JP 3892588 B2 JP3892588 B2 JP 3892588B2 JP 18530298 A JP18530298 A JP 18530298A JP 18530298 A JP18530298 A JP 18530298A JP 3892588 B2 JP3892588 B2 JP 3892588B2
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Japan
Prior art keywords
insulating film
gate electrode
gate
film
source
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Expired - Fee Related
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JP18530298A
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English (en)
Japanese (ja)
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JPH11243195A5 (enExample
JPH11243195A (ja
Inventor
克彦 稗田
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Toshiba Corp
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Toshiba Corp
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Priority to JP18530298A priority Critical patent/JP3892588B2/ja
Publication of JPH11243195A publication Critical patent/JPH11243195A/ja
Publication of JPH11243195A5 publication Critical patent/JPH11243195A5/ja
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Publication of JP3892588B2 publication Critical patent/JP3892588B2/ja
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Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

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  • Insulated Gate Type Field-Effect Transistor (AREA)
JP18530298A 1997-12-26 1998-06-30 半導体装置およびその製造方法 Expired - Fee Related JP3892588B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18530298A JP3892588B2 (ja) 1997-12-26 1998-06-30 半導体装置およびその製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP36681097 1997-12-26
JP9-366810 1997-12-26
JP18530298A JP3892588B2 (ja) 1997-12-26 1998-06-30 半導体装置およびその製造方法

Publications (3)

Publication Number Publication Date
JPH11243195A JPH11243195A (ja) 1999-09-07
JPH11243195A5 JPH11243195A5 (enExample) 2005-05-26
JP3892588B2 true JP3892588B2 (ja) 2007-03-14

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Application Number Title Priority Date Filing Date
JP18530298A Expired - Fee Related JP3892588B2 (ja) 1997-12-26 1998-06-30 半導体装置およびその製造方法

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JP (1) JP3892588B2 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001144032A (ja) * 1999-11-17 2001-05-25 Tokyo Electron Ltd ＴｉＳｉＮ薄膜およびその成膜方法、半導体装置およびその製造方法、ならびにＴｉＳｉＮ薄膜の成膜装置
KR100338783B1 (en) 2000-10-28 2002-06-01 Samsung Electronics Co Ltd Semiconductor device having expanded effective width of active region and fabricating method thereof
JP2002184957A (ja) * 2000-12-13 2002-06-28 Sony Corp 半導体装置およびその製造方法
US20030098489A1 (en) 2001-11-29 2003-05-29 International Business Machines Corporation High temperature processing compatible metal gate electrode for pFETS and methods for fabrication
JP4567969B2 (ja) * 2003-10-28 2010-10-27 東部エレクトロニクス株式会社 半導体素子のトランジスタ製造方法
JP2006253547A (ja) * 2005-03-14 2006-09-21 Oki Electric Ind Co Ltd 半導体記憶装置及びその製造方法
JP5063913B2 (ja) * 2005-04-04 2012-10-31 三星電子株式会社 多層ゲート構造を備える半導体素子及びそれの製造方法
KR100680415B1 (ko) * 2005-05-31 2007-02-08 주식회사 하이닉스반도체 반도체 소자의 제조 방법
JP4309872B2 (ja) 2005-06-17 2009-08-05 株式会社東芝 不揮発性半導体記憶装置およびその製造方法
JP2007194333A (ja) * 2006-01-18 2007-08-02 Elpida Memory Inc 半導体装置の製造方法
CN103187256B (zh) * 2011-12-29 2015-07-08 中芯国际集成电路制造(上海)有限公司 金属栅极的形成方法

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Publication number Publication date
JPH11243195A (ja) 1999-09-07

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