CN101238581B - 在屏蔽的栅极场效应晶体管中形成多晶硅层间电介质的结构和方法 - Google Patents

在屏蔽的栅极场效应晶体管中形成多晶硅层间电介质的结构和方法 Download PDF

Info

Publication number
CN101238581B
CN101238581B CN2006800287698A CN200680028769A CN101238581B CN 101238581 B CN101238581 B CN 101238581B CN 2006800287698 A CN2006800287698 A CN 2006800287698A CN 200680028769 A CN200680028769 A CN 200680028769A CN 101238581 B CN101238581 B CN 101238581B
Authority
CN
China
Prior art keywords
dielectric
effect transistor
groove
along
field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2006800287698A
Other languages
English (en)
Other versions
CN101238581A (zh
Inventor
罗伯特·赫里克
迪安·E·普罗布斯特
弗雷德·塞西诺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Semiconductor Corp filed Critical Fairchild Semiconductor Corp
Publication of CN101238581A publication Critical patent/CN101238581A/zh
Application granted granted Critical
Publication of CN101238581B publication Critical patent/CN101238581B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42356—Disposition, e.g. buried gate electrode
    • H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/66727—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the source electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

如下所述形成一种屏蔽的栅极沟槽FET。在第一导电类型的硅区域(204)中形成沟槽(202)，该沟槽(202)包括通过屏蔽电介质(206)与硅区域(204)绝缘的屏蔽电极(208)。沿屏蔽电极(208)的上表面形成包括热氧化物层(210)和共形电介质层(212)的多晶硅层间电介质(IPD)(214)。至少顺着上部沟槽(202)侧壁形成栅极电介质(216)。在沟槽中形成栅电极(218)，使得栅电极通过IPD与屏蔽电极绝缘。

Description

在屏蔽的栅极场效应晶体管中形成多晶硅层间电介质的结构和方法
背景技术
本发明总体上涉及半导体功率场效应晶体管(FET)，并且更具体地涉及在屏蔽的栅极FET中形成改进的多晶硅层间电介质(IPD)的结构和方法。
由于屏蔽电极降低栅-漏电容(Cgd)，并且提高晶体管的击穿电压，因此，屏蔽的栅极沟槽FET具有优势。图1是传统的屏蔽的栅极沟槽MOSFET的简化横截面图。沟槽110包括位于栅电极122正下方的屏蔽电极114。屏蔽电极114通过通常比栅极电介质120厚的屏蔽电介质112与相邻的硅区域绝缘。栅电极和屏蔽电极通过一般被称为多晶硅层间电介质或IPD的电介质层116彼此绝缘。该IPD层必须具有足够的品质和厚度以承受(support)栅电极与屏蔽电极之间所需的电压。
图1的传统的屏蔽的栅极FET具有许多缺陷。首先，栅电极122具有尖底角，其和屏蔽电极114的平坦顶面一起在这些区域中产生强电场。其次，用于形成IPD的传统方法典型地在沟槽之间的台面(mesa)上引入氧化层，但是在形成栅电极之后的某时刻其又必须被去除。在去除该氧化物期间，不可避免地会发生将某些栅极氧化物蚀刻到沟槽侧壁上，其可能导致栅极短路和栅极泄漏。其它已知技术使IPD的形成依赖于栅极电介质的形成，因此IPD厚度被限于栅极电介质厚度的一组倍数。这不允许栅极电介质和IPD的单独优化。获得的IPD与栅极电介质之间的最大厚度差已经是大约3比1(即，对于给定的目标栅极电介质厚度，已经获得的最大IPD厚度大约为已经获得的目标栅极电介质厚度的三倍)。
因此，存在对形成具有改进的IPD和栅极电介质的屏蔽的栅极沟槽FET的结构和方法的需求。
发明内容
根据本发明的实施例，形成FET的方法如下。在第一导电类型的硅区域中形成沟槽。沟槽包括通过屏蔽电介质与硅区域绝缘的屏蔽电极。沿屏蔽电极的上表面形成包括热氧化物层和共形电介质(conformal dielectric)层的多晶硅层间电介质(IPD)。至少顺着上部沟槽侧壁形成栅极电介质。在沟槽中形成栅电极。栅电极通过IPD与屏蔽电极绝缘。
在一实施例中，IPD具有凹的上表面。
在另一实施例中，IPD的厚度与栅极电介质的厚度比大于3比1。
在又一实施例中，在形成IPD之后形成栅极电介质。
在另一实施例中，如下形成IPD。沿沟槽侧壁的上部以及沿屏蔽电极的上表面形成热氧化物层。用共形电介质层填充沟槽。部分地去除共形电介质层和热氧化物层，从而形成包括热电介质层剩余部分以及共形电介质层剩余部分的IPD。
根据本发明的另一实施例，FET包括延伸至第一导电类型的硅区域中的沟槽。通过屏蔽电介质与硅区域绝缘的屏蔽电极在沟槽的下部中延伸。栅电极位于沟槽中，在屏蔽电极之上，但通过多晶硅层间电介质(IPD)与屏蔽电极绝缘。IPD包括共形电介质层和热氧化物层。
在一实施例中，栅电极通过沿上部沟槽侧壁延伸的栅极电介质与硅区域绝缘，并且IPD的厚度与栅极电介质的厚度比大于3比1。
在另一实施例中，IPD沿其上表面具有凹的轮廓。
在又一实施例中，栅极沿其下表面具有凹的轮廓。
在另一实施例中，共形电介质层被热电介质沿电介质共形层的下表面和侧壁所围绕。
在另一实施例中，共形电介质层具有凸的下表面和凹的上表面。
在另一实施例中，屏蔽电极具有圆形顶面。
在另一实施例中，硅区域包括在第一导电类型的衬底之上延伸的第一导电类型的外延层、外延层中的第二导电类型的阱区、以及阱区中的第一导电类型的源区。源区位于沟槽的侧面。
在一实施例中，沟槽延伸至并终止于外延层内。
在另一实施例中，沟槽延伸穿过外延层并终止于衬底内。
下面的详细描述以及附图提供了对本发明的本质和优点的更好的理解。
附图说明
图1是传统的屏蔽的栅极沟槽MOSFET的简化横截面图；以及
图2A至图2L是根据本发明的实施例，在形成具有改进的多晶硅层间电介质和栅极电介质的屏蔽的栅极沟槽FET的示例性工艺顺序的各个阶段的简化横截面图。
具体实施方式
根据本发明，通过执行热氧化接下来进行共形电介质层的沉积来形成屏蔽的栅极FET的IPD层。然后形成栅极电介质，接下来形成栅电极。该方法将形成IPD层的工艺与形成栅极电介质的工艺分离开，从而使这些电介质层中的每一个都能够被独立地优化。因此，在不损害栅极电介质品质或厚度的情况下，可以形成高品质、厚的IPD以承受栅电极与屏蔽电极之间所需的电压。再者，共形电介质层有助于沿IPD的顶面获得平滑的凹的轮廓(即，像碗的内部)，从而其为栅电极产生平滑的底部轮廓。这与图1中的栅电极具有尖下角的传统FET结构相比，有助于减小电场。
图2A至图2L是根据本发明的实施例，在形成具有改进的IPD和栅极电介质的屏蔽的栅极沟槽FET的示例性工艺顺序的各个阶段的简化横截面图。在图2A中，利用传统的掩模和硅蚀刻技术在硅区域204中形成沟槽202。在一实施例中，硅区域204包括在高导电n型衬底之上延伸的相对轻掺杂的n型外延层。在此实施例中，取决于设计目的，沟槽可以被蚀刻以终止于外延层内或更深地延伸以终止于衬底内。在图2B中，利用已知技术，顺着沟槽侧壁和底部以及临近沟槽的台面区域的表面形成屏蔽电介质层206(例如，包含氧化物)。在一实施例中，使用高温(例如，1150℃)干氧化来形成屏蔽氧化物。高温有助于使沟槽底角变圆，并形成足以承受器件击穿的大约
Figure G2006800287698D00051
的屏蔽氧化物。
在图2C中，利用传统的多晶硅沉积技术来沉积多晶硅层以填充沟槽。然后，所沉积的多晶硅被凹进到沟槽中从而形成屏蔽电极208。然后，屏蔽电介质层的暴露部分被变薄至，例如
Figure G2006800287698D00052
在屏蔽电极包括氧化物的实施例中，使用湿缓冲(wet buffered)氧化物蚀刻来将屏蔽氧化物变薄。屏蔽电介质的剩余暴露部分206a有助于防止在随后的热氧化步骤中沿沟槽侧壁和台面表面的氧化物的过度生长，并有助于控制沟槽腔的轮廓。热氧化物的过度生长可导致在随后沉积的共形电介质中空腔的形成。在一实施例中，完全去除屏蔽电介质206的暴露部分，或者可选地原封不动地保留整个屏蔽电介质206。
在图2D中，执行热氧化步骤以沿着沟槽侧壁、在临近沟槽的台面区的表面之上、以及屏蔽电极208之上形成热氧化层210。热氧化有利地氧化屏蔽电极208的上部，从而产生圆形顶部轮廓。该圆形顶部有助于最小化屏蔽电极208与稍后形成的栅电极之间的区域中的电场。在一实施例中，通过执行低温、湿氧化，之后是高温、干氧化，来形成热氧化物层210。在另一实施例中，热氧化产生具有
Figure G2006800287698D00053
至
Figure G2006800287698D00054
范围内的厚度的热氧化物层210。在又一实施例中，进行低温热氧化(例如，大约850℃)以便沿屏蔽电极的顶面形成比沿沟槽侧壁和台面表面之上更厚的热氧化物层。在这样的实施例中，1.5∶1至2∶1范围内的厚度比将是理想的。在一具体实施例中，热氧化沿屏蔽电极的顶面产生具有厚度约为
Figure G2006800287698D00055
的热氧化物层以及沿沟槽侧壁和台面表面产生具有厚度约为
Figure G2006800287698D00056
的热氧化物层。
在图2E中，沉积共形电介质层212(例如，包含氧化物)以填充沟槽。在一实施例中，利用次大气压化学气相沉积(SACVD)正硅酸乙脂(TEOS)/臭氧工艺在温度约为510℃和压强约为480托的环境下沉积共形电介质层212。所沉积的氧化物完全填充沟槽而不留空隙。
在图2F中，共形电介质层212和热氧化物层210被向下蚀刻至沟槽中直至期望的深度。台面表面之上和沿沟槽侧壁的上部的全部电介质被完全去除，并且具有凹的顶面的多晶硅层间电介质(IPD)层214保留在屏蔽电极208之上。因此，IPD层214包括热电介质层和共形电介质层的叠层。在一实施例中，在将电介质叠层凹进沟槽期间，进行电介质叠层的均匀回蚀(etch back)。可以执行干式各向异性等离子体蚀刻或湿蚀刻以获得所期望的IPD厚度，并且确保沿沟槽侧壁和台面之上的氧化物被完全去除。也可以进行传统的致密(densification)步骤以密化SACVD氧化物。在一实施例中，进行干蚀刻和随后的致密，接下来为湿蚀刻。
在图2G中，利用传统技术来形成沿沟槽侧壁、在IPD层之上、并且在临近沟槽的台面区域之上延伸的栅极电介质层216(例如，来自氧化物)。由于IPD的形成被完全与栅极电介质的形成分离，因此，可以单独优化栅极电介质以具有所期望的特性。在图2H中，利用传统技术，多晶硅层被沉积以填充沟槽，接下来被回蚀以在沟槽202中形成凹进的栅电极218。
在图2I中，在台面之上延伸的栅极电介质216的部分被回蚀至适合于体(body)注入和源注入的厚度。执行传统的毯式体注入(blanket body implant)和推进(drive in)工艺以沿硅区域204的上部形成p型体区220。然后利用传统的源注入以及掩模层(未示出)在沟槽202侧面形成源区222。在图2J中，利用传统技术在该结构之上形成金属前(pre-metal)电介质层224(例如，包括BPSG)。在图2K中，利用掩模层(未示出)，部分去除电介质层224以暴露由掩模层所限定的体区220和源区222的表面。然后进行传统的硅蚀刻(例如，干蚀刻)使暴露的表面区域凹进。从而，所凹进的硅区域形成接触窗口(contact opening)226。
在图2L中，进行毯式重体注入以在体区220中形成自对准p型重体区228。接下来进行电介质224的回流以获得接触窗口的更佳纵横比(aspect ratio)和在随后步骤中被形成以电接触重体区228和源区222的金属层226的更佳阶梯覆盖(step coverage)。水平延伸的虚线被包含在图2L中以示出其中外延层203在衬底201之上延伸、并且沟槽202延伸穿过外延层203并终止于衬底201中的实施例。可选地，沟槽202可以被终止于外延层203内。同样，通过图2A至2L中的横截面图所描述的工艺顺序仅仅是示例性的，并且各个步骤可以被修改或按照与所示顺序不同的顺序来进行。尤其是，为获得具有所期望特征和特性的屏蔽的栅极结构，可以执行多个已知工艺步骤中的任意一个而不是由图2I至2L所描述的步骤。
根据本发明的结构和方法，获得了包括热生长的电介质和共形沉积的电介质的膜叠层的改进的IPD层。热生长的电介质提供了高品质电介质，并用于使屏蔽电极的顶角变圆。共形沉积的电介质(1)填充屏蔽电极上面的间隙，(2)在蚀刻沿沟槽侧壁的电介质时，用作硬掩模以保护屏蔽电极之上的热电介质，以及(3)产生平滑的凹的轮廓，在该凹的轮廓上形成栅电极。沿屏蔽电极的顶面和栅电极的底部的圆形轮廓在这些局部区域中产生较小的电场。
此外，根据本发明形成IPD的方法用于将IPD的形成与栅极氧化物的形成相分离，使得IPD和栅极电介质能够被独立地优化以，例如，获得厚的、高品质IPD和薄的、高品质栅极电介质。在一实施例中，通过利用大于约5比1的IPD厚度与栅极电介质厚度之比来得到最佳晶体管特性。例如，发现大于约
Figure G2006800287698D00071
的IPD厚度和小于约
Figure G2006800287698D00072
的栅极电介质厚度能够提供最佳晶体管特性。形成薄栅极电介质的能力能够被有利地用于获得更低的导通电阻。
为达到甚至更低的导通电阻、更强的阻断能力和更高的效率，以及其他优点和特征，本发明的多种结构和方法可以与大量电荷扩展技术中的一种或更多种以及于2004年12月29日提交的第11/026,276号普通转让申请中所公开的并且其全部内容结合于此作为参考的其它屏蔽栅极结构和制造工艺相结合。
尽管上面示出并描述了多个具体实施例，但是本发明的实施例并不限于此。例如，应当理解在不背离本发明的情况下，可以反转示出的和描述的结构的掺杂极性和/或可以改变各个成分的掺杂浓度。由图2A至2L所描述的工艺顺序是用于形成n沟道FET的，然而鉴于该公开，对于本领域技术人员来说修改该工艺顺序以形成p沟道FET将是显而易见的。同样，尽管上述各个实施例是在传统硅中实现的，但也可以在碳化硅、砷化镓、氮化镓、金刚石或其它半导体材料中实现这些实施例和它们的明显变体。此外，不同实施例的横截面图可能是未按比例的，并且同样也不意味着在相应结构的布图设计中限制可能的变化。同样，可以以带状或包括六边形或方形晶体管单元的蜂窝结构形成所示的FET及其明显的变体。而且，在不背离本发明的范围的情况下，可以将本发明的一个或更多个实施例的特征与本发明的其它实施例的一个或更多个特征相结合。因此，本发明的范围不应被限于所描述的实施例，而是由所附的权利要求所限定。

Claims (33)

1.一种形成场效应晶体管的方法，包括：
在第一导电类型的硅区域中形成沟槽，所述沟槽具有通过屏蔽电介质与所述硅区域绝缘的屏蔽电极；
沿所述屏蔽电极的上表面形成包括热氧化物层和共形电介质层的层间电介质；
至少顺着上部沟槽侧壁形成栅极电介质；以及
在所述沟槽中形成栅电极，所述栅电极通过所述层间电介质与所述屏蔽电极绝缘。
2.根据权利要求1所述的方法，其中，所述层间电介质具有凹的上表面。
3.根据权利要求1所述的方法，其中，所述层间电介质的厚度与所述栅极电介质的厚度之比大于3比1。
4.根据权利要求1所述的方法，其中，在形成所述层间电介质之后形成所述栅极电介质。
5.根据权利要求1所述的方法，其中，所述形成层间电介质的步骤包括：
沿所述沟槽的上部侧壁以及沿所述屏蔽电极的上表面形成热氧化物层；
用共形电介质层填充所述沟槽；以及
部分去除所述共形电介质层以及所述热氧化物层，从而形成包括所述热电介质层剩余部分和所述共形电介质层剩余部分的所述层间电介质。
6.根据权利要求5所述的方法，其中，所述形成热氧化物层的步骤包括热氧化硅，从而沿所述屏蔽电极的所述上表面形成比沿所述沟槽侧壁更厚的热氧化物层。
7.根据权利要求5所述的方法，其中，所述部分去除步骤沿临近所述沟槽的硅表面以及沿上部沟槽侧壁完全去除所有电介质。
8.根据权利要求5所述的方法，其中，所述填充步骤包括沉积共形氧化物层以填充所述沟槽。
9.根据权利要求5所述的方法，其中，所述部分去除步骤包括将所述共形电介质层和所述热氧化物层均匀地回蚀至所述沟槽中的期望深度，使得所述剩余的共形电介质层被所述剩余的热氧化物层沿所述剩余的共形电介质层的下表面和侧壁所环绕。
10.根据权利要求1所述的方法，其中，所述形成沟槽的步骤包括：顺着所述沟槽侧壁和底部形成屏蔽电介质；
形成凹进在所述沟槽中的屏蔽电极；以及
部分去除所述屏蔽电介质的暴露部分，使得所述屏蔽电介质的薄层至少沿上部沟槽侧壁保留。
11.根据权利要求1所述的方法，进一步包括：
在所述硅区域中形成第二导电类型的阱区；以及
在所述阱区中形成源区，使所述源区位于所述沟槽侧面。
12.根据权利要求11所述的方法，进一步包括：
形成在所述栅电极、所述源区和所述阱区之上延伸的金属前电介质层；
去除所述金属前电介质层的预定部分以暴露所述阱区的相应表面；
沿所述暴露的表面使所述阱区凹进，使得源区的侧壁被暴露；以及
形成金属层以电接触所述阱区和所述源区的暴露的侧壁。
13.一种场效应晶体管，包括：
沟槽，延伸至第一导电类型的硅区域中；
屏蔽电极，位于所述沟槽的下部中，所述屏蔽电极通过屏蔽电介质与所述硅区域绝缘；以及
栅电极，位于所述沟槽中，在所述屏蔽电极之上，但通过层间电介质与所述屏蔽电极绝缘，所述层间电介质包括共形电介质层和热氧化物层。
14.根据权利要求13所述的场效应晶体管，其中，所述栅电极通过沿上部沟槽侧壁延伸的栅极电介质与所述硅区域绝缘，并且所述层间电介质的厚度与所述栅极电介质的厚度之比大于3比1。
15.根据权利要求13所述的场效应晶体管，其中，所述层间电介质沿其上表面具有凹的轮廓。
16.根据权利要求13所述的场效应晶体管，其中，所述栅电极沿其下表面具有凹的轮廓。
17.根据权利要求13所述的场效应晶体管，其中，所述共形电介质层沿其下表面和侧壁被所述热电介质所环绕。
18.根据权利要求13所述的场效应晶体管，其中，所述共形电介质层具有凸的下表面和凹的上表面。
19.根据权利要求13所述的场效应晶体管，其中，所述屏蔽电极具有圆形顶面。
20.根据权利要求13所述的场效应晶体管，其中，所述硅区域包括：
所述第一导电类型的外延层，在所述第一导电类型的衬底之上延伸；
第二导电类型的阱区，位于所述外延层中；以及
所述第一导电类型的源区，位于所述阱区中，所述源区位于所述沟槽侧面。
21.根据权利要求20所述的场效应晶体管，其中，所述沟槽延伸至并且终止于所述外延层中。
22.根据权利要求20所述的场效应晶体管，其中，所述沟槽延伸穿过所述外延层并且终止于所述衬底中。
23.一种场效应晶体管，包括：
沟槽，延伸至第一导电类型的硅区域中；
屏蔽电极，位于所述沟槽下部中，所述屏蔽电极通过屏蔽电介质与所述硅区域绝缘；以及
栅电极，位于所述沟槽中，在所述屏蔽电极之上，但通过沿其上表面具有凹的轮廓的层间电介质与所述屏蔽电极绝缘。
24.根据权利要求23所述的场效应晶体管，其中，所述屏蔽电极具有圆形顶面。
25.根据权利要求23所述的场效应晶体管，其中，所述硅区域包括：
所述第一导电类型的外延层，在所述第一导电类型的衬底之上延伸；
第二导电类型的阱区，位于所述外延层中；以及
所述第一导电类型的源区，位于所述阱区中，所述源区位于所述沟槽侧面。
26.根据权利要求25所述的场效应晶体管，其中，所述沟槽延伸至并且终止于所述外延层中。
27.根据权利要求25所述的场效应晶体管，其中，所述沟槽延伸穿过所述外延层并且终止于所述衬底中。
28.一种场效应晶体管，包括：
沟槽，延伸至第一导电类型的硅区域中；
屏蔽电极，位于所述沟槽下部中，所述屏蔽电极通过屏蔽电介质与所述硅区域绝缘；以及
栅电极，位于所述沟槽中，在所述屏蔽电极之上，但通过层间电介质与所述屏蔽电极绝缘，所述层间电介质包括共形电介质层，所述共形电介质层具有沿其下表面的凸的轮廓和沿其上表面的凹的轮廓。
29.根据权利要求28所述的场效应晶体管，其中，所述栅电极沿其下表面具有凹的轮廓。
30.根据权利要求28所述的场效应晶体管，其中，所述层间电介质进一步包括沿所述共形电介质层下表面和侧壁环绕所述共形电介质层的热电介质。
31.根据权利要求28所述的场效应晶体管，其中，所述硅区域包括：
所述第一导电类型的外延层，在所述第一导电类型的衬底之上延伸；
第二导电类型的阱区，位于所述外延层中；以及
所述第一导电类型的源区，位于所述阱区中，所述源区位于所述沟槽侧面。
32.根据权利要求31所述的场效应晶体管，其中，所述沟槽延伸至并且终止于所述外延层中。
33.根据权利要求31所述的场效应晶体管，其中，所述沟槽延伸穿过所述外延层并且终止于所述衬底中。
CN2006800287698A 2005-08-09 2006-08-04 在屏蔽的栅极场效应晶体管中形成多晶硅层间电介质的结构和方法 Expired - Fee Related CN101238581B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/201,400 2005-08-09
US11/201,400 US7385248B2 (en) 2005-08-09 2005-08-09 Shielded gate field effect transistor with improved inter-poly dielectric
PCT/US2006/030944 WO2007021701A2 (en) 2005-08-09 2006-08-04 Structure and method for forming inter-poly dielectric in a shielded gate field effect transistor

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN2010101186508A Division CN101800245B (zh) 2005-08-09 2006-08-04 在屏蔽的栅极场效应晶体管中形成多晶硅层间电介质的结构和方法

Publications (2)

Publication Number Publication Date
CN101238581A CN101238581A (zh) 2008-08-06
CN101238581B true CN101238581B (zh) 2010-04-14

Family

ID=37743042

Family Applications (2)

Application Number Title Priority Date Filing Date
CN2010101186508A Expired - Fee Related CN101800245B (zh) 2005-08-09 2006-08-04 在屏蔽的栅极场效应晶体管中形成多晶硅层间电介质的结构和方法
CN2006800287698A Expired - Fee Related CN101238581B (zh) 2005-08-09 2006-08-04 在屏蔽的栅极场效应晶体管中形成多晶硅层间电介质的结构和方法

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CN2010101186508A Expired - Fee Related CN101800245B (zh) 2005-08-09 2006-08-04 在屏蔽的栅极场效应晶体管中形成多晶硅层间电介质的结构和方法

Country Status (9)

Country Link
US (2) US7385248B2 (zh)
JP (1) JP5075823B2 (zh)
KR (1) KR101221242B1 (zh)
CN (2) CN101800245B (zh)
AT (1) AT504736A2 (zh)
DE (1) DE112006002077B4 (zh)
MY (1) MY141412A (zh)
TW (1) TWI417963B (zh)
WO (1) WO2007021701A2 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101800245B (zh) * 2005-08-09 2013-03-27 飞兆半导体公司 在屏蔽的栅极场效应晶体管中形成多晶硅层间电介质的结构和方法

Families Citing this family (94)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6838722B2 (en) 2002-03-22 2005-01-04 Siliconix Incorporated Structures of and methods of fabricating trench-gated MIS devices
JP5259920B2 (ja) * 2004-08-04 2013-08-07 ローム株式会社 半導体装置およびその製造方法
KR100550351B1 (ko) * 2004-09-07 2006-02-08 삼성전자주식회사 반도체 장치의 막 형성방법 및 이를 수행하기 위한 반도체장치의 막 형성 장치
JP4955222B2 (ja) 2005-05-20 2012-06-20 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
DE102005041256B4 (de) * 2005-08-31 2007-12-20 Infineon Technologies Ag Trenchtransistor
US7319256B1 (en) * 2006-06-19 2008-01-15 Fairchild Semiconductor Corporation Shielded gate trench FET with the shield and gate electrodes being connected together
US20080272429A1 (en) * 2007-05-04 2008-11-06 Icemos Technology Corporation Superjunction devices having narrow surface layout of terminal structures and methods of manufacturing the devices
US8159021B2 (en) * 2008-02-20 2012-04-17 Force-Mos Technology Corporation Trench MOSFET with double epitaxial structure
US20090242973A1 (en) 2008-03-31 2009-10-01 Alpha & Omega Semiconductor, Ltd. Source and body contact structure for trench-dmos devices using polysilicon
US8174071B2 (en) * 2008-05-02 2012-05-08 Taiwan Semiconductor Manufacturing Co., Ltd. High voltage LDMOS transistor
US20100308400A1 (en) * 2008-06-20 2010-12-09 Maxpower Semiconductor Inc. Semiconductor Power Switches Having Trench Gates
US7936009B2 (en) 2008-07-09 2011-05-03 Fairchild Semiconductor Corporation Shielded gate trench FET with an inter-electrode dielectric having a low-k dielectric therein
EP2308095A1 (en) * 2008-07-25 2011-04-13 Nxp B.V. A trench-gate semiconductor device
US7893488B2 (en) * 2008-08-20 2011-02-22 Alpha & Omega Semiconductor, Inc. Charged balanced devices with shielded gate trench
US8278702B2 (en) * 2008-09-16 2012-10-02 Fairchild Semiconductor Corporation High density trench field effect transistor
US8044459B2 (en) * 2008-11-10 2011-10-25 Infineon Technologies Austria Ag Semiconductor device with trench field plate including first and second semiconductor materials
US8304829B2 (en) 2008-12-08 2012-11-06 Fairchild Semiconductor Corporation Trench-based power semiconductor devices with increased breakdown voltage characteristics
US8174067B2 (en) 2008-12-08 2012-05-08 Fairchild Semiconductor Corporation Trench-based power semiconductor devices with increased breakdown voltage characteristics
US20100187602A1 (en) * 2009-01-29 2010-07-29 Woolsey Debra S Methods for making semiconductor devices using nitride consumption locos oxidation
US8227855B2 (en) * 2009-02-09 2012-07-24 Fairchild Semiconductor Corporation Semiconductor devices with stable and controlled avalanche characteristics and methods of fabricating the same
US8148749B2 (en) * 2009-02-19 2012-04-03 Fairchild Semiconductor Corporation Trench-shielded semiconductor device
US8143125B2 (en) * 2009-03-27 2012-03-27 Fairchild Semiconductor Corporation Structure and method for forming a salicide on the gate electrode of a trench-gate FET
US8072027B2 (en) * 2009-06-08 2011-12-06 Fairchild Semiconductor Corporation 3D channel architecture for semiconductor devices
US8049276B2 (en) 2009-06-12 2011-11-01 Fairchild Semiconductor Corporation Reduced process sensitivity of electrode-semiconductor rectifiers
US8252647B2 (en) * 2009-08-31 2012-08-28 Alpha & Omega Semiconductor Incorporated Fabrication of trench DMOS device having thick bottom shielding oxide
US9425305B2 (en) 2009-10-20 2016-08-23 Vishay-Siliconix Structures of and methods of fabricating split gate MIS devices
US9419129B2 (en) 2009-10-21 2016-08-16 Vishay-Siliconix Split gate semiconductor device with curved gate oxide profile
US8072028B2 (en) * 2009-10-26 2011-12-06 Infineon Technologies Austria Ag Method and device including transistor component having a field electrode
US9306056B2 (en) 2009-10-30 2016-04-05 Vishay-Siliconix Semiconductor device with trench-like feed-throughs
US8021947B2 (en) * 2009-12-09 2011-09-20 Semiconductor Components Industries, Llc Method of forming an insulated gate field effect transistor device having a shield electrode structure
US8247296B2 (en) 2009-12-09 2012-08-21 Semiconductor Components Industries, Llc Method of forming an insulated gate field effect transistor device having a shield electrode structure
CN102859699B (zh) 2010-03-02 2016-01-06 维西埃-硅化物公司 制造双栅极装置的结构和方法
US8580667B2 (en) 2010-12-14 2013-11-12 Alpha And Omega Semiconductor Incorporated Self aligned trench MOSFET with integrated diode
CN102623501B (zh) * 2011-01-28 2015-06-03 万国半导体股份有限公司 带有增强型源极-金属接头的屏蔽栅极沟槽金属氧化物半导体场效应管
US8610205B2 (en) * 2011-03-16 2013-12-17 Fairchild Semiconductor Corporation Inter-poly dielectric in a shielded gate MOSFET device
DE112012002136T5 (de) 2011-05-18 2014-03-13 Vishay-Siliconix Halbleitervorrichtung
US8680607B2 (en) * 2011-06-20 2014-03-25 Maxpower Semiconductor, Inc. Trench gated power device with multiple trench width and its fabrication process
US20130001678A1 (en) * 2011-06-29 2013-01-03 Stmicroelectronics S.R.L. High breakdown voltage semiconductor device with an insulated gate formed in a trench, and manufacturing process thereof
US8872278B2 (en) 2011-10-25 2014-10-28 Fairchild Semiconductor Corporation Integrated gate runner and field implant termination for trench devices
US8816431B2 (en) * 2012-03-09 2014-08-26 Fairchild Semiconductor Corporation Shielded gate MOSFET device with a funnel-shaped trench
CN103367144A (zh) * 2012-03-26 2013-10-23 马克斯半导体股份有限公司 沟槽式井区电场屏蔽功率mosfet结构及制作方法
KR101893615B1 (ko) * 2012-06-15 2018-08-31 매그나칩 반도체 유한회사 반도체 소자 및 그 소자의 제조 방법
TWI512841B (zh) 2012-07-13 2015-12-11 Ubiq Semiconductor Corp 溝槽式閘極金氧半場效電晶體的製造方法
TWI470790B (zh) 2012-07-13 2015-01-21 Ubiq Semiconductor Corp 溝渠式閘極金氧半場效電晶體
CN103632950B (zh) * 2012-08-20 2016-02-10 上海华虹宏力半导体制造有限公司 沟槽型双层栅mos中的多晶硅之间的氮化膜形成方法
CN103632949B (zh) * 2012-08-28 2016-06-08 上海华虹宏力半导体制造有限公司 沟槽型双层栅mos的多晶硅间的热氧介质层的形成方法
JP2014056913A (ja) * 2012-09-12 2014-03-27 Sumitomo Electric Ind Ltd 炭化珪素半導体装置
JP5811973B2 (ja) 2012-09-12 2015-11-11 住友電気工業株式会社 炭化珪素半導体装置の製造方法
JP6056292B2 (ja) 2012-09-12 2017-01-11 住友電気工業株式会社 炭化珪素半導体装置の製造方法
US9000497B2 (en) * 2012-09-14 2015-04-07 Renesas Electronics Corporation Trench MOSFET having an independent coupled element in a trench
CN103855017B (zh) * 2012-12-03 2016-08-17 上海华虹宏力半导体制造有限公司 形成沟槽型双层栅mos结构两层多晶硅横向隔离的方法
WO2014197802A1 (en) * 2013-06-06 2014-12-11 United Silicon Carbide, Inc. Trench shield connected jfet
TWI528424B (zh) * 2013-08-05 2016-04-01 台灣茂矽電子股份有限公司 於金氧半場效電晶體形成遮蔽閘之方法
KR20150030799A (ko) 2013-09-12 2015-03-23 매그나칩 반도체 유한회사 반도체 소자 및 그 제조 방법
KR102156130B1 (ko) 2014-04-10 2020-09-15 삼성전자주식회사 반도체 소자 형성 방법
US9257622B2 (en) * 2014-04-14 2016-02-09 Jin-Ywan Lin Light-emitting structure
WO2016028943A1 (en) 2014-08-19 2016-02-25 Vishay-Siliconix Electronic circuit
CN105789043B (zh) * 2014-12-25 2019-03-12 华润微电子（重庆）有限公司 沟槽型半导体器件及其制作方法
US10396215B2 (en) 2015-03-10 2019-08-27 United Silicon Carbide, Inc. Trench vertical JFET with improved threshold voltage control
JP6115678B1 (ja) * 2016-02-01 2017-04-19 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
CN108701715B (zh) * 2016-03-31 2021-04-27 新电元工业株式会社 半导体装置的制造方法以及半导体装置
CN105895516B (zh) * 2016-04-29 2018-08-31 深圳尚阳通科技有限公司 具有屏蔽栅的沟槽栅mosfet的制造方法
TWI577010B (zh) * 2016-05-18 2017-04-01 杰力科技股份有限公司 功率金氧半導體場效電晶體
TWI643253B (zh) * 2016-05-18 2018-12-01 杰力科技股份有限公司 功率金氧半導體場效電晶體的製造方法
TWI615889B (zh) 2016-05-18 2018-02-21 杰力科技股份有限公司 功率金氧半導體場效電晶體的製造方法
US10056457B2 (en) 2016-05-23 2018-08-21 General Electric Company Electric field shielding in silicon carbide metal-oxide-semiconductor (MOS) device cells using channel region extensions
JP6649216B2 (ja) * 2016-09-16 2020-02-19 株式会社東芝 半導体装置およびその製造方法
TWI663725B (zh) 2017-04-26 2019-06-21 國立清華大學 溝槽式閘極功率金氧半場效電晶體之結構
CN109216449B (zh) * 2017-06-30 2021-07-30 帅群微电子股份有限公司 沟槽式功率半导体元件及其制造方法
US10153357B1 (en) 2017-08-28 2018-12-11 Nxp Usa, Inc. Superjunction power semiconductor device and method for forming
CN107871787B (zh) * 2017-10-11 2021-10-12 矽力杰半导体技术(杭州)有限公司 一种制造沟槽mosfet的方法
TW201926470A (zh) * 2017-12-06 2019-07-01 力祥半導體股份有限公司 溝槽式閘極金氧半場效電晶體
CN108389800A (zh) * 2018-01-31 2018-08-10 华润微电子（重庆）有限公司 屏蔽栅沟槽场效应晶体管的制造方法
US10714574B2 (en) * 2018-05-08 2020-07-14 Ipower Semiconductor Shielded trench devices
JP6970068B2 (ja) 2018-09-14 2021-11-24 株式会社東芝 半導体装置
JP7061954B2 (ja) * 2018-11-07 2022-05-02 三菱電機株式会社 半導体装置
CN111613674B (zh) * 2019-02-25 2024-10-25 恒泰柯半导体（上海）有限公司 深沟道mosfet
CN111863617A (zh) * 2019-04-24 2020-10-30 帅群微电子股份有限公司 沟槽式功率半导体组件及其制造方法
US11217541B2 (en) 2019-05-08 2022-01-04 Vishay-Siliconix, LLC Transistors with electrically active chip seal ring and methods of manufacture
US10811502B1 (en) * 2019-05-30 2020-10-20 Nxp Usa, Inc. Method of manufacture of super-junction power semiconductor device
CN110335895A (zh) * 2019-07-31 2019-10-15 上海昱率科技有限公司 功率器件及其制造方法
US11218144B2 (en) 2019-09-12 2022-01-04 Vishay-Siliconix, LLC Semiconductor device with multiple independent gates
CN110896026A (zh) * 2019-11-22 2020-03-20 矽力杰半导体技术(杭州)有限公司 沟槽型mosfet结构及其制造方法
CN112864018B (zh) * 2019-11-28 2022-07-19 华润微电子（重庆）有限公司 沟槽型场效应晶体管结构及其制备方法
CN111276394B (zh) * 2020-02-18 2022-09-23 捷捷微电(上海)科技有限公司 一种分离栅mosfet的制作方法
DE102020205706A1 (de) 2020-05-06 2021-11-11 Robert Bosch Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines defektarmen Übergangs
CN113327858B (zh) * 2020-07-15 2024-02-06 上海积塔半导体有限公司 屏蔽栅场效应晶体管及其制造方法
CN111681963B (zh) * 2020-08-11 2020-11-20 中芯集成电路制造(绍兴)有限公司 一种屏蔽栅场效应晶体管及其形成方法
US11848378B2 (en) * 2020-08-13 2023-12-19 Stmicroelectronics Pte Ltd Split-gate trench power MOSFET with self-aligned poly-to-poly isolation
JP7512920B2 (ja) * 2021-02-05 2024-07-09 三菱電機株式会社 半導体装置およびその製造方法
EP4057359A1 (en) 2021-03-08 2022-09-14 Nexperia B.V. Semiconductor device comprising mutually separated trench structures
KR102500888B1 (ko) 2021-05-31 2023-02-17 주식회사 키파운드리 분할 게이트 전력 모스펫 및 제조 방법
CN114678275B (zh) * 2021-12-29 2024-07-30 杭州芯迈半导体技术有限公司 分离栅mosfet及其制造方法
CN114242578B (zh) * 2022-02-21 2022-06-17 威海银创微电子技术有限公司 SGT Mosfet中IPO厚度的可控方法、装置及介质

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6331466B1 (en) * 1994-02-21 2001-12-18 Mitsubishi Denki Kabushiki Kaisha Insulated gate semiconductor device and manufacturing method thereof
US6608350B2 (en) * 2000-12-07 2003-08-19 International Rectifier Corporation High voltage vertical conduction superjunction semiconductor device
US6734066B2 (en) * 2002-05-24 2004-05-11 Nanya Technology Corporation Method for fabricating split gate flash memory cell

Family Cites Families (172)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3404295A (en) 1964-11-30 1968-10-01 Motorola Inc High frequency and voltage transistor with added region for punch-through protection
US3412297A (en) 1965-12-16 1968-11-19 United Aircraft Corp Mos field-effect transistor with a onemicron vertical channel
US3497777A (en) 1967-06-13 1970-02-24 Stanislas Teszner Multichannel field-effect semi-conductor device
US3564356A (en) 1968-10-24 1971-02-16 Tektronix Inc High voltage integrated circuit transistor
US3660697A (en) 1970-02-16 1972-05-02 Bell Telephone Labor Inc Monolithic semiconductor apparatus adapted for sequential charge transfer
US4003072A (en) 1972-04-20 1977-01-11 Sony Corporation Semiconductor device with high voltage breakdown resistance
US4011105A (en) 1975-09-15 1977-03-08 Mos Technology, Inc. Field inversion control for n-channel device integrated circuits
US4337474A (en) 1978-08-31 1982-06-29 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
US4698653A (en) 1979-10-09 1987-10-06 Cardwell Jr Walter T Semiconductor devices controlled by depletion regions
US4638344A (en) 1979-10-09 1987-01-20 Cardwell Jr Walter T Junction field-effect transistor controlled by merged depletion regions
US4345265A (en) 1980-04-14 1982-08-17 Supertex, Inc. MOS Power transistor with improved high-voltage capability
US4868624A (en) 1980-05-09 1989-09-19 Regents Of The University Of Minnesota Channel collector transistor
US4300150A (en) 1980-06-16 1981-11-10 North American Philips Corporation Lateral double-diffused MOS transistor device
US4326332A (en) 1980-07-28 1982-04-27 International Business Machines Corp. Method of making a high density V-MOS memory array
EP0051693B1 (de) 1980-11-12 1985-06-19 Ibm Deutschland Gmbh Elektrisch umschaltbarer Festwertspeicher
US4324038A (en) 1980-11-24 1982-04-13 Bell Telephone Laboratories, Incorporated Method of fabricating MOS field effect transistors
US4969028A (en) 1980-12-02 1990-11-06 General Electric Company Gate enhanced rectifier
GB2089119A (en) 1980-12-10 1982-06-16 Philips Electronic Associated High voltage semiconductor devices
US4974059A (en) 1982-12-21 1990-11-27 International Rectifier Corporation Semiconductor high-power mosfet device
JPS6016420A (ja) 1983-07-08 1985-01-28 Mitsubishi Electric Corp 選択的エピタキシヤル成長方法
US4639761A (en) 1983-12-16 1987-01-27 North American Philips Corporation Combined bipolar-field effect transistor resurf devices
US4568958A (en) 1984-01-03 1986-02-04 General Electric Company Inversion-mode insulated-gate gallium arsenide field-effect transistors
FR2566179B1 (fr) 1984-06-14 1986-08-22 Commissariat Energie Atomique Procede d'autopositionnement d'un oxyde de champ localise par rapport a une tranchee d'isolement
US5208657A (en) 1984-08-31 1993-05-04 Texas Instruments Incorporated DRAM Cell with trench capacitor and vertical channel in substrate
US4824793A (en) 1984-09-27 1989-04-25 Texas Instruments Incorporated Method of making DRAM cell with trench capacitor
US4673962A (en) 1985-03-21 1987-06-16 Texas Instruments Incorporated Vertical DRAM cell and method
US4774556A (en) 1985-07-25 1988-09-27 Nippondenso Co., Ltd. Non-volatile semiconductor memory device
US5262336A (en) 1986-03-21 1993-11-16 Advanced Power Technology, Inc. IGBT process to produce platinum lifetime control
US4767722A (en) 1986-03-24 1988-08-30 Siliconix Incorporated Method for making planar vertical channel DMOS structures
US5034785A (en) 1986-03-24 1991-07-23 Siliconix Incorporated Planar vertical channel DMOS structure
US4716126A (en) 1986-06-05 1987-12-29 Siliconix Incorporated Fabrication of double diffused metal oxide semiconductor transistor
US4746630A (en) 1986-09-17 1988-05-24 Hewlett-Packard Company Method for producing recessed field oxide with improved sidewall characteristics
US4941026A (en) 1986-12-05 1990-07-10 General Electric Company Semiconductor devices exhibiting minimum on-resistance
JP2577330B2 (ja) 1986-12-11 1997-01-29 新技術事業団 両面ゲ−ト静電誘導サイリスタの製造方法
US5105243A (en) 1987-02-26 1992-04-14 Kabushiki Kaisha Toshiba Conductivity-modulation metal oxide field effect transistor with single gate structure
US4821095A (en) 1987-03-12 1989-04-11 General Electric Company Insulated gate semiconductor device with extra short grid and method of fabrication
AU601537B2 (en) 1987-03-25 1990-09-13 Kabushiki Kaisha Komatsu Seisakusho Hydraulic clutch pressure control apparatus
US4745079A (en) 1987-03-30 1988-05-17 Motorola, Inc. Method for fabricating MOS transistors having gates with different work functions
US4823176A (en) 1987-04-03 1989-04-18 General Electric Company Vertical double diffused metal oxide semiconductor (VDMOS) device including high voltage junction exhibiting increased safe operating area
US4801986A (en) 1987-04-03 1989-01-31 General Electric Company Vertical double diffused metal oxide semiconductor VDMOS device with increased safe operating area and method
US5164325A (en) 1987-10-08 1992-11-17 Siliconix Incorporated Method of making a vertical current flow field effect transistor
US4893160A (en) 1987-11-13 1990-01-09 Siliconix Incorporated Method for increasing the performance of trenched devices and the resulting structure
US4914058A (en) 1987-12-29 1990-04-03 Siliconix Incorporated Grooved DMOS process with varying gate dielectric thickness
EP0332822A1 (de) 1988-02-22 1989-09-20 Asea Brown Boveri Ag Feldeffektgesteuertes, bipolares Leistungshalbleiter-Bauelement sowie Verfahren zu seiner Herstellung
US4967245A (en) 1988-03-14 1990-10-30 Siliconix Incorporated Trench power MOSFET device
US5283201A (en) 1988-05-17 1994-02-01 Advanced Power Technology, Inc. High density power device fabrication process
KR0173111B1 (ko) 1988-06-02 1999-02-01 야마무라 가쯔미 트렌치 게이트 mos fet
US4961100A (en) 1988-06-20 1990-10-02 General Electric Company Bidirectional field effect semiconductor device and circuit
JPH0216763A (ja) 1988-07-05 1990-01-19 Toshiba Corp 半導体装置の製造方法
US4853345A (en) 1988-08-22 1989-08-01 Delco Electronics Corporation Process for manufacture of a vertical DMOS transistor
US5268311A (en) 1988-09-01 1993-12-07 International Business Machines Corporation Method for forming a thin dielectric layer on a substrate
US5156989A (en) 1988-11-08 1992-10-20 Siliconix, Incorporated Complementary, isolated DMOS IC technology
US5346834A (en) 1988-11-21 1994-09-13 Hitachi, Ltd. Method for manufacturing a semiconductor device and a semiconductor memory device
US5072266A (en) 1988-12-27 1991-12-10 Siliconix Incorporated Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry
US5111253A (en) 1989-05-09 1992-05-05 General Electric Company Multicellular FET having a Schottky diode merged therewith
US4992390A (en) 1989-07-06 1991-02-12 General Electric Company Trench gate structure with thick bottom oxide
EP0450082B1 (en) 1989-08-31 2004-04-28 Denso Corporation Insulated gate bipolar transistor
US5248894A (en) 1989-10-03 1993-09-28 Harris Corporation Self-aligned channel stop for trench-isolated island
US5134448A (en) 1990-01-29 1992-07-28 Motorola, Inc. MOSFET with substrate source contact
US5242845A (en) 1990-06-13 1993-09-07 Kabushiki Kaisha Toshiba Method of production of vertical MOS transistor
US5071782A (en) 1990-06-28 1991-12-10 Texas Instruments Incorporated Vertical memory cell array and method of fabrication
US5079608A (en) 1990-11-06 1992-01-07 Harris Corporation Power MOSFET transistor circuit with active clamp
EP0487022B1 (en) 1990-11-23 1997-04-23 Texas Instruments Incorporated A method of simultaneously fabricating an insulated gate-field-effect transistor and a bipolar transistor
US5065273A (en) 1990-12-04 1991-11-12 International Business Machines Corporation High capacity DRAM trench capacitor and methods of fabricating same
US5168331A (en) 1991-01-31 1992-12-01 Siliconix Incorporated Power metal-oxide-semiconductor field effect transistor
JP2825004B2 (ja) 1991-02-08 1998-11-18 インターナショナル・ビジネス・マシーンズ・コーポレーション 側壁電荷結合撮像素子及びその製造方法
CN1019720B (zh) 1991-03-19 1992-12-30 电子科技大学 半导体功率器件
US5164802A (en) 1991-03-20 1992-11-17 Harris Corporation Power vdmosfet with schottky on lightly doped drain of lateral driver fet
US5250450A (en) 1991-04-08 1993-10-05 Micron Technology, Inc. Insulated-gate vertical field-effect transistor with high current drive and minimum overlap capacitance
JP2603886B2 (ja) 1991-05-09 1997-04-23 日本電信電話株式会社 薄層ｓｏｉ型絶縁ゲート型電界効果トランジスタの製造方法
US5219793A (en) 1991-06-03 1993-06-15 Motorola Inc. Method for forming pitch independent contacts and a semiconductor device having the same
KR940006702B1 (ko) 1991-06-14 1994-07-25 금성일렉트론 주식회사 모스패트의 제조방법
US5298761A (en) 1991-06-17 1994-03-29 Nikon Corporation Method and apparatus for exposure process
JP2570022B2 (ja) 1991-09-20 1997-01-08 株式会社日立製作所 定電圧ダイオード及びそれを用いた電力変換装置並びに定電圧ダイオードの製造方法
JPH0613627A (ja) 1991-10-08 1994-01-21 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
US5300452A (en) 1991-12-18 1994-04-05 U.S. Philips Corporation Method of manufacturing an optoelectronic semiconductor device
US5366914A (en) 1992-01-29 1994-11-22 Nec Corporation Vertical power MOSFET structure having reduced cell area
JPH06196723A (ja) 1992-04-28 1994-07-15 Mitsubishi Electric Corp 半導体装置及びその製造方法
US5233215A (en) 1992-06-08 1993-08-03 North Carolina State University At Raleigh Silicon carbide power MOSFET with floating field ring and floating field plate
US5430324A (en) * 1992-07-23 1995-07-04 Siliconix, Incorporated High voltage transistor having edge termination utilizing trench technology
US5910669A (en) 1992-07-24 1999-06-08 Siliconix Incorporated Field effect Trench transistor having lightly doped epitaxial region on the surface portion thereof
US5281548A (en) 1992-07-28 1994-01-25 Micron Technology, Inc. Plug-based floating gate memory
US5294824A (en) 1992-07-31 1994-03-15 Motorola, Inc. High voltage transistor having reduced on-resistance
US5300447A (en) 1992-09-29 1994-04-05 Texas Instruments Incorporated Method of manufacturing a minimum scaled transistor
US5275965A (en) 1992-11-25 1994-01-04 Micron Semiconductor, Inc. Trench isolation using gated sidewalls
US5326711A (en) 1993-01-04 1994-07-05 Texas Instruments Incorporated High performance high voltage vertical transistor and method of fabrication
US5418376A (en) 1993-03-02 1995-05-23 Toyo Denki Seizo Kabushiki Kaisha Static induction semiconductor device with a distributed main electrode structure and static induction semiconductor device with a static induction main electrode shorted structure
US5341011A (en) 1993-03-15 1994-08-23 Siliconix Incorporated Short channel trenched DMOS transistor
DE4309764C2 (de) 1993-03-25 1997-01-30 Siemens Ag Leistungs-MOSFET
KR960012585B1 (en) * 1993-06-25 1996-09-23 Samsung Electronics Co Ltd Transistor structure and the method for manufacturing the same
US5371396A (en) 1993-07-02 1994-12-06 Thunderbird Technologies, Inc. Field effect transistor having polycrystalline silicon gate junction
US5365102A (en) 1993-07-06 1994-11-15 North Carolina State University Schottky barrier rectifier with MOS trench
BE1007283A3 (nl) 1993-07-12 1995-05-09 Philips Electronics Nv Halfgeleiderinrichting met een most voorzien van een extended draingebied voor hoge spanningen.
JPH07122749A (ja) 1993-09-01 1995-05-12 Toshiba Corp 半導体装置及びその製造方法
JP3400846B2 (ja) 1994-01-20 2003-04-28 三菱電機株式会社 トレンチ構造を有する半導体装置およびその製造方法
US5429977A (en) 1994-03-11 1995-07-04 Industrial Technology Research Institute Method for forming a vertical transistor with a stacked capacitor DRAM cell
US5434435A (en) 1994-05-04 1995-07-18 North Carolina State University Trench gate lateral MOSFET
DE4417150C2 (de) * 1994-05-17 1996-03-14 Siemens Ag Verfahren zur Herstellung einer Anordnung mit selbstverstärkenden dynamischen MOS-Transistorspeicherzellen
US5405794A (en) 1994-06-14 1995-04-11 Philips Electronics North America Corporation Method of producing VDMOS device of increased power density
US5424231A (en) 1994-08-09 1995-06-13 United Microelectronics Corp. Method for manufacturing a VDMOS transistor
US5583368A (en) * 1994-08-11 1996-12-10 International Business Machines Corporation Stacked devices
US5674766A (en) * 1994-12-30 1997-10-07 Siliconix Incorporated Method of making a trench MOSFET with multi-resistivity drain to provide low on-resistance by varying dopant concentration in epitaxial layer
US5597765A (en) * 1995-01-10 1997-01-28 Siliconix Incorporated Method for making termination structure for power MOSFET
JP3325736B2 (ja) * 1995-02-09 2002-09-17 三菱電機株式会社 絶縁ゲート型半導体装置
JP3291957B2 (ja) * 1995-02-17 2002-06-17 富士電機株式会社 縦型トレンチｍｉｓｆｅｔおよびその製造方法
US5595927A (en) * 1995-03-17 1997-01-21 Taiwan Semiconductor Manufacturing Company Ltd. Method for making self-aligned source/drain mask ROM memory cell using trench etched channel
US5592005A (en) * 1995-03-31 1997-01-07 Siliconix Incorporated Punch-through field effect transistor
US5554552A (en) * 1995-04-03 1996-09-10 Taiwan Semiconductor Manufacturing Company PN junction floating gate EEPROM, flash EPROM device and method of manufacture thereof
US5744372A (en) * 1995-04-12 1998-04-28 National Semiconductor Corporation Fabrication of complementary field-effect transistors each having multi-part channel
JPH08306914A (ja) * 1995-04-27 1996-11-22 Nippondenso Co Ltd 半導体装置およびその製造方法
US5705409A (en) * 1995-09-28 1998-01-06 Motorola Inc. Method for forming trench transistor structure
US5879971A (en) * 1995-09-28 1999-03-09 Motorola Inc. Trench random access memory cell and method of formation
US5616945A (en) * 1995-10-13 1997-04-01 Siliconix Incorporated Multiple gated MOSFET for use in DC-DC converter
US6037632A (en) * 1995-11-06 2000-03-14 Kabushiki Kaisha Toshiba Semiconductor device
EP1408554B1 (de) * 1996-02-05 2015-03-25 Infineon Technologies AG Durch Feldeffekt steuerbares Halbleiterbauelement
US5895951A (en) * 1996-04-05 1999-04-20 Megamos Corporation MOSFET structure and fabrication process implemented by forming deep and narrow doping regions through doping trenches
US5719409A (en) * 1996-06-06 1998-02-17 Cree Research, Inc. Silicon carbide metal-insulator semiconductor field effect transistor
JP2891205B2 (ja) * 1996-10-21 1999-05-17 日本電気株式会社 半導体集積回路の製造方法
US6207994B1 (en) * 1996-11-05 2001-03-27 Power Integrations, Inc. High-voltage transistor with multi-layer conduction region
US6168983B1 (en) * 1996-11-05 2001-01-02 Power Integrations, Inc. Method of making a high-voltage transistor with multiple lateral conduction layers
US6011298A (en) * 1996-12-31 2000-01-04 Stmicroelectronics, Inc. High voltage termination with buried field-shaping region
JP3938964B2 (ja) * 1997-02-10 2007-06-27 三菱電機株式会社 高耐圧半導体装置およびその製造方法
US5877528A (en) * 1997-03-03 1999-03-02 Megamos Corporation Structure to provide effective channel-stop in termination areas for trenched power transistors
KR100225409B1 (ko) * 1997-03-27 1999-10-15 김덕중 트렌치 디-모오스 및 그의 제조 방법
US5879994A (en) * 1997-04-15 1999-03-09 National Semiconductor Corporation Self-aligned method of fabricating terrace gate DMOS transistor
US6037628A (en) * 1997-06-30 2000-03-14 Intersil Corporation Semiconductor structures with trench contacts
JP3502531B2 (ja) * 1997-08-28 2004-03-02 株式会社ルネサステクノロジ 半導体装置の製造方法
DE19740195C2 (de) * 1997-09-12 1999-12-02 Siemens Ag Halbleiterbauelement mit Metall-Halbleiterübergang mit niedrigem Sperrstrom
US6337499B1 (en) * 1997-11-03 2002-01-08 Infineon Technologies Ag Semiconductor component
US5949104A (en) * 1998-02-07 1999-09-07 Xemod, Inc. Source connection structure for lateral RF MOS devices
US5897343A (en) * 1998-03-30 1999-04-27 Motorola, Inc. Method of making a power switching trench MOSFET having aligned source regions
US5945724A (en) * 1998-04-09 1999-08-31 Micron Technology, Inc. Trench isolation region for semiconductor device
US6048772A (en) * 1998-05-04 2000-04-11 Xemod, Inc. Method for fabricating a lateral RF MOS device with an non-diffusion source-backside connection
DE19820223C1 (de) * 1998-05-06 1999-11-04 Siemens Ag Verfahren zum Herstellen einer Epitaxieschicht mit lateral veränderlicher Dotierung
US6015727A (en) * 1998-06-08 2000-01-18 Wanlass; Frank M. Damascene formation of borderless contact MOS transistors
DE19848828C2 (de) * 1998-10-22 2001-09-13 Infineon Technologies Ag Halbleiterbauelement mit kleiner Durchlaßspannung und hoher Sperrfähigkeit
US6194741B1 (en) * 1998-11-03 2001-02-27 International Rectifier Corp. MOSgated trench type power semiconductor with silicon carbide substrate and increased gate breakdown voltage and reduced on-resistance
DE19854915C2 (de) * 1998-11-27 2002-09-05 Infineon Technologies Ag MOS-Feldeffekttransistor mit Hilfselektrode
US6351018B1 (en) * 1999-02-26 2002-02-26 Fairchild Semiconductor Corporation Monolithically integrated trench MOSFET and Schottky diode
US6204097B1 (en) * 1999-03-01 2001-03-20 Semiconductor Components Industries, Llc Semiconductor device and method of manufacture
US6188105B1 (en) * 1999-04-01 2001-02-13 Intersil Corporation High density MOS-gated power device and process for forming same
TW425701B (en) * 1999-04-27 2001-03-11 Taiwan Semiconductor Mfg Manufacturing method of stack-type capacitor
US6198127B1 (en) * 1999-05-19 2001-03-06 Intersil Corporation MOS-gated power device having extended trench and doping zone and process for forming same
US6191447B1 (en) * 1999-05-28 2001-02-20 Micro-Ohm Corporation Power semiconductor devices that utilize tapered trench-based insulating regions to improve electric field profiles in highly doped drift region mesas and methods of forming same
JP3851744B2 (ja) * 1999-06-28 2006-11-29 株式会社東芝 半導体装置の製造方法
GB9917099D0 (en) * 1999-07-22 1999-09-22 Koninkl Philips Electronics Nv Cellular trench-gate field-effect transistors
JP3971062B2 (ja) * 1999-07-29 2007-09-05 株式会社東芝 高耐圧半導体装置
JP2001085685A (ja) * 1999-09-13 2001-03-30 Shindengen Electric Mfg Co Ltd トランジスタ
US20030060013A1 (en) * 1999-09-24 2003-03-27 Bruce D. Marchant Method of manufacturing trench field effect transistors with trenched heavy body
US6461918B1 (en) * 1999-12-20 2002-10-08 Fairchild Semiconductor Corporation Power MOS device with improved gate charge performance
US6285060B1 (en) * 1999-12-30 2001-09-04 Siliconix Incorporated Barrier accumulation-mode MOSFET
US6346469B1 (en) * 2000-01-03 2002-02-12 Motorola, Inc. Semiconductor device and a process for forming the semiconductor device
US6627949B2 (en) * 2000-06-02 2003-09-30 General Semiconductor, Inc. High voltage power MOSFET having low on-resistance
US6479352B2 (en) * 2000-06-02 2002-11-12 General Semiconductor, Inc. Method of fabricating high voltage power MOSFET having low on-resistance
EP1170803A3 (en) * 2000-06-08 2002-10-09 Siliconix Incorporated Trench gate MOSFET and method of making the same
JP2002016152A (ja) 2000-06-29 2002-01-18 Toshiba Corp 半導体装置の製造方法
JP4528460B2 (ja) 2000-06-30 2010-08-18 株式会社東芝 半導体素子
US6921939B2 (en) * 2000-07-20 2005-07-26 Fairchild Semiconductor Corporation Power MOSFET and method for forming same using a self-aligned body implant
US6362112B1 (en) * 2000-11-08 2002-03-26 Fabtech, Inc. Single step etched moat
US7345342B2 (en) * 2001-01-30 2008-03-18 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
US6677641B2 (en) * 2001-10-17 2004-01-13 Fairchild Semiconductor Corporation Semiconductor structure with improved smaller forward voltage loss and higher blocking capability
US6870220B2 (en) 2002-08-23 2005-03-22 Fairchild Semiconductor Corporation Method and apparatus for improved MOS gating to reduce miller capacitance and switching losses
US6683346B2 (en) 2001-03-09 2004-01-27 Fairchild Semiconductor Corporation Ultra dense trench-gated power-device with the reduced drain-source feedback capacitance and Miller charge
TWI248136B (en) * 2002-03-19 2006-01-21 Infineon Technologies Ag Method for fabricating a transistor arrangement having trench transistor cells having a field electrode
DE10324754B4 (de) * 2003-05-30 2018-11-08 Infineon Technologies Ag Halbleiterbauelement
TWI227540B (en) * 2003-06-10 2005-02-01 Mosel Vitelic Inc Method for forming rounding corner in the trench
DE10350684B4 (de) 2003-10-30 2008-08-28 Infineon Technologies Ag Verfahren zur Herstellung einer Leistungstransistoranordnung und mit diesem Verfahren hergestellte Leistungstransistoranordnung
DE10353387B4 (de) 2003-11-14 2008-07-24 Infineon Technologies Ag Verfahren zur Herstellung einer Leistungstransistoranordnung und Leistungstransistoranordnung
JP5034151B2 (ja) 2003-12-17 2012-09-26 富士電機株式会社 半導体装置およびその製造方法
TWI400757B (zh) * 2005-06-29 2013-07-01 Fairchild Semiconductor 形成遮蔽閘極場效應電晶體之方法
US7238586B2 (en) * 2005-07-21 2007-07-03 United Microelectronics Corp. Seamless trench fill method utilizing sub-atmospheric pressure chemical vapor deposition technique
US7385248B2 (en) * 2005-08-09 2008-06-10 Fairchild Semiconductor Corporation Shielded gate field effect transistor with improved inter-poly dielectric

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6331466B1 (en) * 1994-02-21 2001-12-18 Mitsubishi Denki Kabushiki Kaisha Insulated gate semiconductor device and manufacturing method thereof
US6608350B2 (en) * 2000-12-07 2003-08-19 International Rectifier Corporation High voltage vertical conduction superjunction semiconductor device
US6734066B2 (en) * 2002-05-24 2004-05-11 Nanya Technology Corporation Method for fabricating split gate flash memory cell

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101800245B (zh) * 2005-08-09 2013-03-27 飞兆半导体公司 在屏蔽的栅极场效应晶体管中形成多晶硅层间电介质的结构和方法

Also Published As

Publication number Publication date
MY141412A (en) 2010-04-30
CN101800245A (zh) 2010-08-11
US20080090339A1 (en) 2008-04-17
WO2007021701A3 (en) 2007-09-13
TW200715416A (en) 2007-04-16
JP2009505403A (ja) 2009-02-05
KR20080035686A (ko) 2008-04-23
WO2007021701A2 (en) 2007-02-22
KR101221242B1 (ko) 2013-01-11
US7598144B2 (en) 2009-10-06
DE112006002077T5 (de) 2008-07-03
JP5075823B2 (ja) 2012-11-21
US7385248B2 (en) 2008-06-10
US20070037327A1 (en) 2007-02-15
CN101238581A (zh) 2008-08-06
DE112006002077B4 (de) 2020-01-02
TWI417963B (zh) 2013-12-01
AT504736A2 (de) 2008-07-15
CN101800245B (zh) 2013-03-27

Similar Documents

Publication Publication Date Title
CN101238581B (zh) 在屏蔽的栅极场效应晶体管中形成多晶硅层间电介质的结构和方法
US9865694B2 (en) Split-gate trench power mosfet with protected shield oxide
US8610205B2 (en) Inter-poly dielectric in a shielded gate MOSFET device
US7855115B2 (en) Method for forming laterally extending dielectric layer in a trench-gate FET
CN101615632B (zh) 用于形成具有包括氮化层的极间电介质的屏蔽栅沟槽fet的结构和方法
US7553740B2 (en) Structure and method for forming a minimum pitch trench-gate FET with heavy body region
US8524558B2 (en) Split gate with different gate materials and work functions to reduce gate resistance of ultra high density MOSFET
JP5519902B2 (ja) リセスチャネルを有するトランジスタ及びその製造方法
US20150221734A1 (en) Thicker bottom oxide for reduced miller capacitance in trench metal oxide semiconductor field effect transistor (mosfet)
US20100187602A1 (en) Methods for making semiconductor devices using nitride consumption locos oxidation
US11069794B2 (en) Trench power transistor and method of producing the same
CN101138093A (zh) 沟槽型mosfet及其制造方法
KR20090132533A (ko) 트렌치형 게이트 소자를 위한 두꺼운 저부 유전체의 구조 및 그 제조 방법
US7494876B1 (en) Trench-gated MIS device having thick polysilicon insulation layer at trench bottom and method of fabricating the same
US12113103B2 (en) Charge-balance power device, and process for manufacturing the charge-balance power device
KR100656239B1 (ko) 선택적 에피택셜 성장에 의해 형성된 트렌치 벽을 갖는 트렌치-게이트 파워 디바이스
CN115810546A (zh) 一种具有高k介质的屏蔽栅沟槽MOSFET的制造方法
US20240304717A1 (en) Semiconductor device having split gate structure and manufacturing method therefor

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20100414

Termination date: 20210804

CF01 Termination of patent right due to non-payment of annual fee