JP2008529279A - パワーダイオードを包含する集積回路 - Google Patents
パワーダイオードを包含する集積回路 Download PDFInfo
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- JP2008529279A JP2008529279A JP2007552191A JP2007552191A JP2008529279A JP 2008529279 A JP2008529279 A JP 2008529279A JP 2007552191 A JP2007552191 A JP 2007552191A JP 2007552191 A JP2007552191 A JP 2007552191A JP 2008529279 A JP2008529279 A JP 2008529279A
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- 239000004065 semiconductor Substances 0.000 claims abstract description 36
- 238000004519 manufacturing process Methods 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 239000003989 dielectric material Substances 0.000 claims abstract 11
- 239000007943 implant Substances 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 8
- 239000002019 doping agent Substances 0.000 claims description 7
- 125000006850 spacer group Chemical group 0.000 claims description 5
- 239000010410 layer Substances 0.000 claims 5
- GNFTZDOKVXKIBK-UHFFFAOYSA-N 3-(2-methoxyethoxy)benzohydrazide Chemical compound COCCOC1=CC=CC(C(=O)NN)=C1 GNFTZDOKVXKIBK-UHFFFAOYSA-N 0.000 claims 1
- 239000002344 surface layer Substances 0.000 claims 1
- 238000002955 isolation Methods 0.000 abstract description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 24
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 16
- 229920005591 polysilicon Polymers 0.000 description 16
- 238000005530 etching Methods 0.000 description 9
- 229910052796 boron Inorganic materials 0.000 description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052785 arsenic Inorganic materials 0.000 description 7
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000012467 final product Substances 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 150000001638 boron Chemical class 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Abstract
Description
Claims (19)
- 半導体集積回路であって、
a)第1の伝導型の材料を有する半導体基板と、
b)集積回路が製造される前記基板に第1の領域と、
c)前記基板に、パワーダイオードが製造される第2の伝導型の材料を有する第2の領域と、
d)前記第1の領域と前記第2の領域との間に電気的に絶縁を設け、前記第1の領域と前記第2の領域との間に配置される誘電材料と、
を有することを特徴とする半導体集積回路。 - 前記誘電材料が、半導体基板の表面に形成された酸化シリコンからなり、前記第2の領域が第2の伝導型のインプラントドーパントを包含することを特徴とする請求項1に記載の集積回路。
- 前記誘電材料が酸化シリコンからなることを特徴とする請求項2に記載の集積回路。
- 前記第2の領域が、前記基板の一方の表面のトレンチに成長されたエピタキシャル半導体材料を包含し、前記誘電材料が、前記トレンチの側壁に形成されたスペーサを有することを特徴とする請求項1に記載の集積回路。
- 前記パワーダイオードが、第1の電極として機能する基板の表面上に伝導層を含み、伝導が前記表面から基板内に延び、第2の電極として機能する第2の伝導型の半導体材料と接触する、ことを特徴とする請求項1に記載の集積回路。
- 前記パワーダイオードが、複数のMOSソース/ドレインエレメントおよび前記第1の電極によって一緒に全て接続された関連するゲートエレメントと、前記第2の領域の第2の伝導型の半導体層とを有し、複数のMOSソース/ドレインエレメントが製造され、前記半導体層が、前記第2の電極と接触していることを特徴とする請求項5に記載の集積回路。
- 各MOSソース/ドレインエレメントが、ゲートエレメントによって制御されたチャネルを介して前記半導体層と電気的に接触可能であることを特徴とする請求項6に記載の集積回路。
- 各チャネルが、半導体層からチャネル領域を分離する傾斜したP−N接合を備えたゲートエレメントの下で横方向に傾斜していることを特徴とする請求項7に記載の集積回路。
- 前記P−N接合が、低減した逆バイアスリーク電流を提供するように、全てのゲートエレメントの下に横たわることを特徴とする請求項8に記載の集積回路。
- 前記誘電材料が、反動滝版の表面に形成された酸化シリコンからなり、前記第2の領域が第2の伝導型のインプラントドーパントを含むことを特徴とする請求項5に記載の集積回路。
- 前記誘電材料が酸化シリコンからなることを特徴とする請求項10に記載の集積回路。
- 前記第2の領域が、前記基板の表面のトレンチに成長されたエピタキシャル半導体材料を含み、前記誘電材料が、前記トレンチの側壁に形成されたスペーサを含むことを特徴とする請求項5に記載の集積回路。
- 半導体ボディにパワーダイオードを含む集積回路を製造する方法であって、
a)第1の伝導型の表面層を含む半導体基板を提供するステップと、
b)集積回路が製造される第2の領域から、パワーダイオードが分離されて製造される第1の領域の周りの半導体基板の表面に誘電材料を形成するステップと、
c)前記第1の領域に第2の伝導型の半導体材料を形成するステップと、
d)前記第2の領域に集積回路を製造するステップと、
e)デバイス領域の表面、および、第2の伝導型の半導体材料に、複数のMOSソース/ドレインエレメントおよび関連するゲートエレメントを製造するステップと、
f)前記複数のMOSソース/ドレインエレメントおよび関連するゲートエレメントを接続する第1のダイオード電極を形成するステップと、
g)前記デバイス領域の表面から、第2のダイオード電極として第2の伝導型の半導体材料に伝導を形成するステップと
を有することを特徴とする方法。 - 前記ステップb)が、前記第1の領域にトレンチを形成するステップと、前記トレンチに誘電側壁スペーサを形成するステップとを含み、
前記ステップc)が、前記トレンチに第2の伝導型の半導体材料をエピタキシャル成長させるステップを含む
ことを特徴とする請求項13に記載の方法。 - 前記ステップb)が、前記半導体基板の表面に誘電材料を形成するステップを含み、
前記ステップc)が、第2の伝導型のドーパントを前記第1の領域内に打ち込むステップを含む
ことを特徴とする請求項13に記載の方法。 - h)前記誘電材料と隣接する前記第1の領域に第1の伝導型のドープされた保護環を形成するステップ
を更に有することを特徴とする請求項13に記載の方法。 - i)第2の型の半導体材料内に延びる第1の領域に第1の伝導型のプラグを形成するステップ
を更に有することを特徴とする請求項16に記載の方法。 - 前記ステップg)が、前記伝導と複数のMOSソース/ドレインエレメントとの間に誘電性のスペーサを形成するステップを含む、ことを特徴とする請求項13に記載の方法。
- 前記ステップd)が、CMOSトランジスタに関する複数のNウェルと、複数のPウェルとを形成するステップを含むことを特徴とする請求項13に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/040,180 US7250668B2 (en) | 2005-01-20 | 2005-01-20 | Integrated circuit including power diode |
PCT/US2006/001362 WO2006078573A2 (en) | 2005-01-20 | 2006-01-12 | Integrated circuit including power diode |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2008529279A true JP2008529279A (ja) | 2008-07-31 |
Family
ID=36683026
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2007552191A Pending JP2008529279A (ja) | 2005-01-20 | 2006-01-12 | パワーダイオードを包含する集積回路 |
Country Status (6)
Country | Link |
---|---|
US (3) | US7250668B2 (ja) |
EP (2) | EP2405482A3 (ja) |
JP (1) | JP2008529279A (ja) |
CN (2) | CN101151732B (ja) |
TW (1) | TW200636991A (ja) |
WO (1) | WO2006078573A2 (ja) |
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US7205758B1 (en) | 2004-02-02 | 2007-04-17 | Transmeta Corporation | Systems and methods for adjusting threshold voltage |
US7816742B1 (en) | 2004-09-30 | 2010-10-19 | Koniaris Kleanthes G | Systems and methods for integrated circuits comprising multiple body biasing domains |
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US7250668B2 (en) * | 2005-01-20 | 2007-07-31 | Diodes, Inc. | Integrated circuit including power diode |
US7768085B2 (en) | 2005-10-11 | 2010-08-03 | Icemos Technology Ltd. | Photodetector array using isolation diffusions as crosstalk inhibitors between adjacent photodiodes |
US7700977B2 (en) * | 2007-06-21 | 2010-04-20 | Intersil Americas Inc. | Integrated circuit with a subsurface diode |
WO2009042807A2 (en) * | 2007-09-26 | 2009-04-02 | Lakota Technologies, Inc. | Adjustable field effect rectifier |
US8148748B2 (en) | 2007-09-26 | 2012-04-03 | Stmicroelectronics N.V. | Adjustable field effect rectifier |
US8633521B2 (en) * | 2007-09-26 | 2014-01-21 | Stmicroelectronics N.V. | Self-bootstrapping field effect diode structures and methods |
US8390091B2 (en) * | 2009-02-03 | 2013-03-05 | Freescale Semiconductor, Inc. | Semiconductor structure, an integrated circuit including a semiconductor structure and a method for manufacturing a semiconductor structure |
WO2010127370A2 (en) * | 2009-05-01 | 2010-11-04 | Lakota Technologies, Inc. | Series current limiting device |
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CN104425489B (zh) * | 2013-08-20 | 2017-03-01 | 上海华虹宏力半导体制造有限公司 | 高压器件和低压器件集成结构和集成方法 |
CN104576661B (zh) * | 2013-10-11 | 2017-10-20 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制造方法和电子装置 |
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-
2005
- 2005-01-20 US US11/040,180 patent/US7250668B2/en active Active
-
2006
- 2006-01-12 WO PCT/US2006/001362 patent/WO2006078573A2/en active Application Filing
- 2006-01-12 JP JP2007552191A patent/JP2008529279A/ja active Pending
- 2006-01-12 CN CN2006800025604A patent/CN101151732B/zh not_active Expired - Fee Related
- 2006-01-12 EP EP11008150A patent/EP2405482A3/en not_active Withdrawn
- 2006-01-12 EP EP06718439A patent/EP1846953A4/en not_active Withdrawn
- 2006-01-12 CN CN2011103068500A patent/CN102354685A/zh active Pending
- 2006-01-19 TW TW095102058A patent/TW200636991A/zh unknown
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2007
- 2007-06-22 US US11/821,234 patent/US7964933B2/en active Active
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2011
- 2011-05-16 US US13/108,630 patent/US20110223729A1/en not_active Abandoned
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Also Published As
Publication number | Publication date |
---|---|
EP2405482A9 (en) | 2012-04-25 |
CN101151732B (zh) | 2011-12-14 |
US20060157815A1 (en) | 2006-07-20 |
TW200636991A (en) | 2006-10-16 |
US7250668B2 (en) | 2007-07-31 |
US20110223729A1 (en) | 2011-09-15 |
CN101151732A (zh) | 2008-03-26 |
US20070246794A1 (en) | 2007-10-25 |
EP2405482A3 (en) | 2012-05-02 |
EP2405482A2 (en) | 2012-01-11 |
WO2006078573A2 (en) | 2006-07-27 |
EP1846953A4 (en) | 2009-07-15 |
US7964933B2 (en) | 2011-06-21 |
CN102354685A (zh) | 2012-02-15 |
EP1846953A2 (en) | 2007-10-24 |
WO2006078573A3 (en) | 2007-02-15 |
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