JP2003332582A5 - - Google Patents

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Publication number
JP2003332582A5
JP2003332582A5 JP2002137268A JP2002137268A JP2003332582A5 JP 2003332582 A5 JP2003332582 A5 JP 2003332582A5 JP 2002137268 A JP2002137268 A JP 2002137268A JP 2002137268 A JP2002137268 A JP 2002137268A JP 2003332582 A5 JP2003332582 A5 JP 2003332582A5
Authority
JP
Japan
Prior art keywords
insulating film
forming
gate electrode
gate
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002137268A
Other languages
English (en)
Japanese (ja)
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JP2003332582A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2002137268A priority Critical patent/JP2003332582A/ja
Priority claimed from JP2002137268A external-priority patent/JP2003332582A/ja
Priority to TW092112697A priority patent/TWI236149B/zh
Priority to CN03131313.2A priority patent/CN1235292C/zh
Priority to CN200510084297.5A priority patent/CN100524819C/zh
Priority to US10/436,181 priority patent/US6979846B2/en
Publication of JP2003332582A publication Critical patent/JP2003332582A/ja
Priority to US11/137,539 priority patent/US7208353B2/en
Publication of JP2003332582A5 publication Critical patent/JP2003332582A5/ja
Priority to US11/717,068 priority patent/US7537978B2/en
Pending legal-status Critical Current

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JP2002137268A 2002-05-13 2002-05-13 半導体装置及びその製造方法 Pending JP2003332582A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2002137268A JP2003332582A (ja) 2002-05-13 2002-05-13 半導体装置及びその製造方法
TW092112697A TWI236149B (en) 2002-05-13 2003-05-09 Semiconductor device and its manufacturing method
CN03131313.2A CN1235292C (zh) 2002-05-13 2003-05-13 半导体器件及其制造方法
CN200510084297.5A CN100524819C (zh) 2002-05-13 2003-05-13 半导体器件及其制造方法
US10/436,181 US6979846B2 (en) 2002-05-13 2003-05-13 Semiconductor device and manufacturing method thereof
US11/137,539 US7208353B2 (en) 2002-05-13 2005-05-26 Semiconductor device and manufacturing method thereof
US11/717,068 US7537978B2 (en) 2002-05-13 2007-03-13 Semiconductor device and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002137268A JP2003332582A (ja) 2002-05-13 2002-05-13 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JP2003332582A JP2003332582A (ja) 2003-11-21
JP2003332582A5 true JP2003332582A5 (enExample) 2005-08-25

Family

ID=29397554

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002137268A Pending JP2003332582A (ja) 2002-05-13 2002-05-13 半導体装置及びその製造方法

Country Status (4)

Country Link
US (3) US6979846B2 (enExample)
JP (1) JP2003332582A (enExample)
CN (2) CN100524819C (enExample)
TW (1) TWI236149B (enExample)

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US9564200B2 (en) * 2007-04-10 2017-02-07 Snu R&Db Foundation Pillar-type field effect transistor having low leakage current
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CN103003934B (zh) * 2010-07-16 2015-07-01 株式会社半导体能源研究所 半导体器件
JP5531848B2 (ja) * 2010-08-06 2014-06-25 富士通セミコンダクター株式会社 半導体装置、半導体集積回路装置、ＳＲＡＭ、Ｄｔ−ＭＯＳトランジスタの製造方法
US8716800B2 (en) * 2010-12-31 2014-05-06 Institute of Microelectronics, Chinese Academy of Sciences Semiconductor structure and method for manufacturing the same
CN102738167B (zh) * 2011-03-31 2017-02-22 中国科学院微电子研究所 半导体器件及其形成方法
CN102646592B (zh) * 2011-05-03 2014-12-03 京东方科技集团股份有限公司 薄膜场效应晶体管器件及其制备方法
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