JP2009032905A5 - - Google Patents

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Publication number
JP2009032905A5
JP2009032905A5 JP2007195492A JP2007195492A JP2009032905A5 JP 2009032905 A5 JP2009032905 A5 JP 2009032905A5 JP 2007195492 A JP2007195492 A JP 2007195492A JP 2007195492 A JP2007195492 A JP 2007195492A JP 2009032905 A5 JP2009032905 A5 JP 2009032905A5
Authority
JP
Japan
Prior art keywords
region
drain region
source region
gate electrode
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2007195492A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009032905A (ja
JP5165954B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2007195492A external-priority patent/JP5165954B2/ja
Priority to JP2007195492A priority Critical patent/JP5165954B2/ja
Priority to TW097127794A priority patent/TWI459472B/zh
Priority to US12/178,316 priority patent/US8716142B2/en
Priority to KR1020080072871A priority patent/KR101520485B1/ko
Priority to CN200810144745XA priority patent/CN101355105B/zh
Publication of JP2009032905A publication Critical patent/JP2009032905A/ja
Publication of JP2009032905A5 publication Critical patent/JP2009032905A5/ja
Publication of JP5165954B2 publication Critical patent/JP5165954B2/ja
Application granted granted Critical
Priority to US14/208,911 priority patent/US9276065B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2007195492A 2007-07-27 2007-07-27 半導体装置 Expired - Fee Related JP5165954B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2007195492A JP5165954B2 (ja) 2007-07-27 2007-07-27 半導体装置
TW097127794A TWI459472B (zh) 2007-07-27 2008-07-22 半導體裝置及其製造方法
US12/178,316 US8716142B2 (en) 2007-07-27 2008-07-23 Semiconductor device and method of manufacturing the same
CN200810144745XA CN101355105B (zh) 2007-07-27 2008-07-25 半导体装置及其制造方法
KR1020080072871A KR101520485B1 (ko) 2007-07-27 2008-07-25 반도체 소자 및 그 제조 방법
US14/208,911 US9276065B2 (en) 2007-07-27 2014-03-13 Semiconductor device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007195492A JP5165954B2 (ja) 2007-07-27 2007-07-27 半導体装置

Publications (3)

Publication Number Publication Date
JP2009032905A JP2009032905A (ja) 2009-02-12
JP2009032905A5 true JP2009032905A5 (enExample) 2010-05-27
JP5165954B2 JP5165954B2 (ja) 2013-03-21

Family

ID=40294497

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007195492A Expired - Fee Related JP5165954B2 (ja) 2007-07-27 2007-07-27 半導体装置

Country Status (5)

Country Link
US (2) US8716142B2 (enExample)
JP (1) JP5165954B2 (enExample)
KR (1) KR101520485B1 (enExample)
CN (1) CN101355105B (enExample)
TW (1) TWI459472B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5738094B2 (ja) * 2010-09-14 2015-06-17 セイコーインスツル株式会社 半導体装置の製造方法
JP5881100B2 (ja) * 2011-12-22 2016-03-09 エスアイアイ・セミコンダクタ株式会社 半導体装置の製造方法
DE102015106688B4 (de) * 2015-04-29 2020-03-12 Infineon Technologies Ag Schalter mit einem feldeffekttransistor, insbesondere in einer integrierten schaltung zur verwendung in systemen mit lasten
JP2018089845A (ja) * 2016-12-02 2018-06-14 大日本印刷株式会社 個体認証用半導体チップ、個体認証媒体及び個体認証方法

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08264764A (ja) * 1995-03-22 1996-10-11 Toshiba Corp 半導体装置
JPH1065150A (ja) * 1996-08-14 1998-03-06 Yokogawa Electric Corp Ｄｍｏｓ ｆｅｔ
JP3405681B2 (ja) * 1997-07-31 2003-05-12 株式会社東芝 半導体装置
JP3461277B2 (ja) * 1998-01-23 2003-10-27 株式会社東芝 半導体装置及びその製造方法
US6066533A (en) * 1998-09-29 2000-05-23 Advanced Micro Devices, Inc. MOS transistor with dual metal gate structure
US6956263B1 (en) * 1999-12-28 2005-10-18 Intel Corporation Field effect transistor structure with self-aligned raised source/drain extensions
US6531347B1 (en) * 2000-02-08 2003-03-11 Advanced Micro Devices, Inc. Method of making recessed source drains to reduce fringing capacitance
JP4780818B2 (ja) * 2000-03-03 2011-09-28 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP3651802B2 (ja) * 2002-09-12 2005-05-25 株式会社東芝 半導体装置の製造方法
KR100521369B1 (ko) * 2002-12-18 2005-10-12 삼성전자주식회사 고속도 및 저전력 소모 반도체 소자 및 그 제조 방법
JP2005136150A (ja) * 2003-10-30 2005-05-26 Oki Electric Ind Co Ltd 半導体装置及びその製造方法
JP4837902B2 (ja) * 2004-06-24 2011-12-14 富士通セミコンダクター株式会社 半導体装置
JP2006019518A (ja) * 2004-07-01 2006-01-19 Seiko Instruments Inc 横型トレンチｍｏｓｆｅｔ
JP5110776B2 (ja) 2004-07-01 2012-12-26 セイコーインスツル株式会社 半導体装置の製造方法
US7102201B2 (en) * 2004-07-15 2006-09-05 International Business Machines Corporation Strained semiconductor device structures
JP4515305B2 (ja) * 2005-03-29 2010-07-28 富士通セミコンダクター株式会社 ｐチャネルＭＯＳトランジスタおよびその製造方法、半導体集積回路装置の製造方法
JP4976658B2 (ja) * 2005-04-05 2012-07-18 セイコーインスツル株式会社 半導体装置の製造方法
US7569443B2 (en) * 2005-06-21 2009-08-04 Intel Corporation Complementary metal oxide semiconductor integrated circuit using raised source drain and replacement metal gate
KR100714307B1 (ko) * 2005-08-05 2007-05-02 삼성전자주식회사 활성영역 가장자리에 리세스영역을 갖는 반도체 장치 및 그형성방법
JP4410195B2 (ja) * 2006-01-06 2010-02-03 株式会社東芝 半導体装置及びその製造方法
DE102006015077B4 (de) * 2006-03-31 2010-12-23 Advanced Micro Devices, Inc., Sunnyvale Transistor mit abgesenkten Drain- und Source-Gebieten und Verfahren zur Herstellung desselben
US7410875B2 (en) * 2006-04-06 2008-08-12 United Microelectronics Corp. Semiconductor structure and fabrication thereof
US7719062B2 (en) * 2006-12-29 2010-05-18 Intel Corporation Tuned tensile stress low resistivity slot contact structure for n-type transistor performance enhancement
JP2008192985A (ja) * 2007-02-07 2008-08-21 Seiko Instruments Inc 半導体装置、及び半導体装置の製造方法
JP2009152394A (ja) * 2007-12-20 2009-07-09 Toshiba Corp 半導体装置及びその製造方法
JP5442951B2 (ja) * 2008-02-26 2014-03-19 セイコーインスツル株式会社 半導体装置の製造方法
JP4770885B2 (ja) * 2008-06-30 2011-09-14 ソニー株式会社 半導体装置

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