TWI459472B - 半導體裝置及其製造方法 - Google Patents
半導體裝置及其製造方法 Download PDFInfo
- Publication number
- TWI459472B TWI459472B TW097127794A TW97127794A TWI459472B TW I459472 B TWI459472 B TW I459472B TW 097127794 A TW097127794 A TW 097127794A TW 97127794 A TW97127794 A TW 97127794A TW I459472 B TWI459472 B TW I459472B
- Authority
- TW
- Taiwan
- Prior art keywords
- region
- drain region
- gate electrode
- source region
- conductivity type
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 44
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000000758 substrate Substances 0.000 claims description 22
- 239000012535 impurity Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 11
- 238000009792 diffusion process Methods 0.000 claims description 7
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 description 7
- 238000005520 cutting process Methods 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/025—Manufacture or treatment forming recessed gates, e.g. by using local oxidation
- H10D64/027—Manufacture or treatment forming recessed gates, e.g. by using local oxidation by etching at gate locations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/65—Lateral DMOS [LDMOS] FETs
- H10D30/658—Lateral DMOS [LDMOS] FETs having trench gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/149—Source or drain regions of field-effect devices
- H10D62/151—Source or drain regions of field-effect devices of IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/213—Channel regions of field-effect devices
- H10D62/221—Channel regions of field-effect devices of FETs
- H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
- H10D62/292—Non-planar channels of IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
- H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
- H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007195492A JP5165954B2 (ja) | 2007-07-27 | 2007-07-27 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200924071A TW200924071A (en) | 2009-06-01 |
| TWI459472B true TWI459472B (zh) | 2014-11-01 |
Family
ID=40294497
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097127794A TWI459472B (zh) | 2007-07-27 | 2008-07-22 | 半導體裝置及其製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US8716142B2 (enExample) |
| JP (1) | JP5165954B2 (enExample) |
| KR (1) | KR101520485B1 (enExample) |
| CN (1) | CN101355105B (enExample) |
| TW (1) | TWI459472B (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5738094B2 (ja) * | 2010-09-14 | 2015-06-17 | セイコーインスツル株式会社 | 半導体装置の製造方法 |
| JP5881100B2 (ja) * | 2011-12-22 | 2016-03-09 | エスアイアイ・セミコンダクタ株式会社 | 半導体装置の製造方法 |
| DE102015106688B4 (de) * | 2015-04-29 | 2020-03-12 | Infineon Technologies Ag | Schalter mit einem feldeffekttransistor, insbesondere in einer integrierten schaltung zur verwendung in systemen mit lasten |
| JP2018089845A (ja) * | 2016-12-02 | 2018-06-14 | 大日本印刷株式会社 | 個体認証用半導体チップ、個体認証媒体及び個体認証方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08264764A (ja) * | 1995-03-22 | 1996-10-11 | Toshiba Corp | 半導体装置 |
| JPH1065150A (ja) * | 1996-08-14 | 1998-03-06 | Yokogawa Electric Corp | Ｄｍｏｓ ｆｅｔ |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3405681B2 (ja) * | 1997-07-31 | 2003-05-12 | 株式会社東芝 | 半導体装置 |
| JP3461277B2 (ja) * | 1998-01-23 | 2003-10-27 | 株式会社東芝 | 半導体装置及びその製造方法 |
| US6066533A (en) * | 1998-09-29 | 2000-05-23 | Advanced Micro Devices, Inc. | MOS transistor with dual metal gate structure |
| US6956263B1 (en) * | 1999-12-28 | 2005-10-18 | Intel Corporation | Field effect transistor structure with self-aligned raised source/drain extensions |
| US6531347B1 (en) * | 2000-02-08 | 2003-03-11 | Advanced Micro Devices, Inc. | Method of making recessed source drains to reduce fringing capacitance |
| JP4780818B2 (ja) * | 2000-03-03 | 2011-09-28 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP3651802B2 (ja) * | 2002-09-12 | 2005-05-25 | 株式会社東芝 | 半導体装置の製造方法 |
| KR100521369B1 (ko) * | 2002-12-18 | 2005-10-12 | 삼성전자주식회사 | 고속도 및 저전력 소모 반도체 소자 및 그 제조 방법 |
| JP2005136150A (ja) * | 2003-10-30 | 2005-05-26 | Oki Electric Ind Co Ltd | 半導体装置及びその製造方法 |
| JP4837902B2 (ja) * | 2004-06-24 | 2011-12-14 | 富士通セミコンダクター株式会社 | 半導体装置 |
| JP2006019518A (ja) * | 2004-07-01 | 2006-01-19 | Seiko Instruments Inc | 横型トレンチｍｏｓｆｅｔ |
| JP5110776B2 (ja) | 2004-07-01 | 2012-12-26 | セイコーインスツル株式会社 | 半導体装置の製造方法 |
| US7102201B2 (en) * | 2004-07-15 | 2006-09-05 | International Business Machines Corporation | Strained semiconductor device structures |
| JP4515305B2 (ja) * | 2005-03-29 | 2010-07-28 | 富士通セミコンダクター株式会社 | ｐチャネルＭＯＳトランジスタおよびその製造方法、半導体集積回路装置の製造方法 |
| JP4976658B2 (ja) * | 2005-04-05 | 2012-07-18 | セイコーインスツル株式会社 | 半導体装置の製造方法 |
| US7569443B2 (en) * | 2005-06-21 | 2009-08-04 | Intel Corporation | Complementary metal oxide semiconductor integrated circuit using raised source drain and replacement metal gate |
| KR100714307B1 (ko) * | 2005-08-05 | 2007-05-02 | 삼성전자주식회사 | 활성영역 가장자리에 리세스영역을 갖는 반도체 장치 및 그형성방법 |
| JP4410195B2 (ja) * | 2006-01-06 | 2010-02-03 | 株式会社東芝 | 半導体装置及びその製造方法 |
| DE102006015077B4 (de) * | 2006-03-31 | 2010-12-23 | Advanced Micro Devices, Inc., Sunnyvale | Transistor mit abgesenkten Drain- und Source-Gebieten und Verfahren zur Herstellung desselben |
| US7410875B2 (en) * | 2006-04-06 | 2008-08-12 | United Microelectronics Corp. | Semiconductor structure and fabrication thereof |
| US7719062B2 (en) * | 2006-12-29 | 2010-05-18 | Intel Corporation | Tuned tensile stress low resistivity slot contact structure for n-type transistor performance enhancement |
| JP2008192985A (ja) * | 2007-02-07 | 2008-08-21 | Seiko Instruments Inc | 半導体装置、及び半導体装置の製造方法 |
| JP2009152394A (ja) * | 2007-12-20 | 2009-07-09 | Toshiba Corp | 半導体装置及びその製造方法 |
| JP5442951B2 (ja) * | 2008-02-26 | 2014-03-19 | セイコーインスツル株式会社 | 半導体装置の製造方法 |
| JP4770885B2 (ja) * | 2008-06-30 | 2011-09-14 | ソニー株式会社 | 半導体装置 |
-
2007
- 2007-07-27 JP JP2007195492A patent/JP5165954B2/ja not_active Expired - Fee Related
-
2008
- 2008-07-22 TW TW097127794A patent/TWI459472B/zh not_active IP Right Cessation
- 2008-07-23 US US12/178,316 patent/US8716142B2/en not_active Expired - Fee Related
- 2008-07-25 CN CN200810144745XA patent/CN101355105B/zh not_active Expired - Fee Related
- 2008-07-25 KR KR1020080072871A patent/KR101520485B1/ko not_active Expired - Fee Related
-
2014
- 2014-03-13 US US14/208,911 patent/US9276065B2/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08264764A (ja) * | 1995-03-22 | 1996-10-11 | Toshiba Corp | 半導体装置 |
| JPH1065150A (ja) * | 1996-08-14 | 1998-03-06 | Yokogawa Electric Corp | Ｄｍｏｓ ｆｅｔ |
Also Published As
| Publication number | Publication date |
|---|---|
| US9276065B2 (en) | 2016-03-01 |
| KR101520485B1 (ko) | 2015-05-14 |
| JP2009032905A (ja) | 2009-02-12 |
| US20090026537A1 (en) | 2009-01-29 |
| CN101355105B (zh) | 2012-06-27 |
| CN101355105A (zh) | 2009-01-28 |
| US8716142B2 (en) | 2014-05-06 |
| US20140191313A1 (en) | 2014-07-10 |
| TW200924071A (en) | 2009-06-01 |
| KR20090012159A (ko) | 2009-02-02 |
| JP5165954B2 (ja) | 2013-03-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |