CN101355105B - 半导体装置及其制造方法 - Google Patents

半导体装置及其制造方法 Download PDF

Info

Publication number
CN101355105B
CN101355105B CN200810144745XA CN200810144745A CN101355105B CN 101355105 B CN101355105 B CN 101355105B CN 200810144745X A CN200810144745X A CN 200810144745XA CN 200810144745 A CN200810144745 A CN 200810144745A CN 101355105 B CN101355105 B CN 101355105B
Authority
CN
China
Prior art keywords
region
gate
conductivity type
drain region
source region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN200810144745XA
Other languages
English (en)
Chinese (zh)
Other versions
CN101355105A (zh
Inventor
桥谷雅幸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ablic Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Publication of CN101355105A publication Critical patent/CN101355105A/zh
Application granted granted Critical
Publication of CN101355105B publication Critical patent/CN101355105B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/025—Manufacture or treatment forming recessed gates, e.g. by using local oxidation
    • H10D64/027—Manufacture or treatment forming recessed gates, e.g. by using local oxidation by etching at gate locations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H10D30/658—Lateral DMOS [LDMOS] FETs having trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/292—Non-planar channels of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
CN200810144745XA 2007-07-27 2008-07-25 半导体装置及其制造方法 Expired - Fee Related CN101355105B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007195492A JP5165954B2 (ja) 2007-07-27 2007-07-27 半導体装置
JP2007195492 2007-07-27
JP2007-195492 2007-07-27

Publications (2)

Publication Number Publication Date
CN101355105A CN101355105A (zh) 2009-01-28
CN101355105B true CN101355105B (zh) 2012-06-27

Family

ID=40294497

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200810144745XA Expired - Fee Related CN101355105B (zh) 2007-07-27 2008-07-25 半导体装置及其制造方法

Country Status (5)

Country Link
US (2) US8716142B2 (enExample)
JP (1) JP5165954B2 (enExample)
KR (1) KR101520485B1 (enExample)
CN (1) CN101355105B (enExample)
TW (1) TWI459472B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5738094B2 (ja) * 2010-09-14 2015-06-17 セイコーインスツル株式会社 半導体装置の製造方法
JP5881100B2 (ja) * 2011-12-22 2016-03-09 エスアイアイ・セミコンダクタ株式会社 半導体装置の製造方法
DE102015106688B4 (de) * 2015-04-29 2020-03-12 Infineon Technologies Ag Schalter mit einem feldeffekttransistor, insbesondere in einer integrierten schaltung zur verwendung in systemen mit lasten
JP2018089845A (ja) * 2016-12-02 2018-06-14 大日本印刷株式会社 個体認証用半導体チップ、個体認証媒体及び個体認証方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6956263B1 (en) * 1999-12-28 2005-10-18 Intel Corporation Field effect transistor structure with self-aligned raised source/drain extensions

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08264764A (ja) * 1995-03-22 1996-10-11 Toshiba Corp 半導体装置
JPH1065150A (ja) * 1996-08-14 1998-03-06 Yokogawa Electric Corp Ｄｍｏｓ ｆｅｔ
JP3405681B2 (ja) * 1997-07-31 2003-05-12 株式会社東芝 半導体装置
JP3461277B2 (ja) * 1998-01-23 2003-10-27 株式会社東芝 半導体装置及びその製造方法
US6066533A (en) * 1998-09-29 2000-05-23 Advanced Micro Devices, Inc. MOS transistor with dual metal gate structure
US6531347B1 (en) * 2000-02-08 2003-03-11 Advanced Micro Devices, Inc. Method of making recessed source drains to reduce fringing capacitance
JP4780818B2 (ja) * 2000-03-03 2011-09-28 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP3651802B2 (ja) * 2002-09-12 2005-05-25 株式会社東芝 半導体装置の製造方法
KR100521369B1 (ko) * 2002-12-18 2005-10-12 삼성전자주식회사 고속도 및 저전력 소모 반도체 소자 및 그 제조 방법
JP2005136150A (ja) * 2003-10-30 2005-05-26 Oki Electric Ind Co Ltd 半導体装置及びその製造方法
JP4837902B2 (ja) * 2004-06-24 2011-12-14 富士通セミコンダクター株式会社 半導体装置
JP2006019518A (ja) * 2004-07-01 2006-01-19 Seiko Instruments Inc 横型トレンチｍｏｓｆｅｔ
JP5110776B2 (ja) 2004-07-01 2012-12-26 セイコーインスツル株式会社 半導体装置の製造方法
US7102201B2 (en) * 2004-07-15 2006-09-05 International Business Machines Corporation Strained semiconductor device structures
JP4515305B2 (ja) * 2005-03-29 2010-07-28 富士通セミコンダクター株式会社 ｐチャネルＭＯＳトランジスタおよびその製造方法、半導体集積回路装置の製造方法
JP4976658B2 (ja) * 2005-04-05 2012-07-18 セイコーインスツル株式会社 半導体装置の製造方法
US7569443B2 (en) * 2005-06-21 2009-08-04 Intel Corporation Complementary metal oxide semiconductor integrated circuit using raised source drain and replacement metal gate
KR100714307B1 (ko) * 2005-08-05 2007-05-02 삼성전자주식회사 활성영역 가장자리에 리세스영역을 갖는 반도체 장치 및 그형성방법
JP4410195B2 (ja) * 2006-01-06 2010-02-03 株式会社東芝 半導体装置及びその製造方法
DE102006015077B4 (de) * 2006-03-31 2010-12-23 Advanced Micro Devices, Inc., Sunnyvale Transistor mit abgesenkten Drain- und Source-Gebieten und Verfahren zur Herstellung desselben
US7410875B2 (en) * 2006-04-06 2008-08-12 United Microelectronics Corp. Semiconductor structure and fabrication thereof
US7719062B2 (en) * 2006-12-29 2010-05-18 Intel Corporation Tuned tensile stress low resistivity slot contact structure for n-type transistor performance enhancement
JP2008192985A (ja) * 2007-02-07 2008-08-21 Seiko Instruments Inc 半導体装置、及び半導体装置の製造方法
JP2009152394A (ja) * 2007-12-20 2009-07-09 Toshiba Corp 半導体装置及びその製造方法
JP5442951B2 (ja) * 2008-02-26 2014-03-19 セイコーインスツル株式会社 半導体装置の製造方法
JP4770885B2 (ja) * 2008-06-30 2011-09-14 ソニー株式会社 半導体装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6956263B1 (en) * 1999-12-28 2005-10-18 Intel Corporation Field effect transistor structure with self-aligned raised source/drain extensions

Also Published As

Publication number Publication date
US9276065B2 (en) 2016-03-01
KR101520485B1 (ko) 2015-05-14
JP2009032905A (ja) 2009-02-12
US20090026537A1 (en) 2009-01-29
TWI459472B (zh) 2014-11-01
CN101355105A (zh) 2009-01-28
US8716142B2 (en) 2014-05-06
US20140191313A1 (en) 2014-07-10
TW200924071A (en) 2009-06-01
KR20090012159A (ko) 2009-02-02
JP5165954B2 (ja) 2013-03-21

Similar Documents

Publication Publication Date Title
CN100533769C (zh) 半导体装置及其制造方法
CN102820326B (zh) 半导体器件及其制造方法
US8598026B2 (en) Semiconductor device and method of manufacturing the same
CN102208439B (zh) 半导体装置及其制造方法
CN101355104B (zh) 半导体装置及其制造方法
EP2089907A1 (de) Halbleiterbauelement und herstellungsverfahren dafür
CN101355105B (zh) 半导体装置及其制造方法
US8236648B2 (en) Trench MOS transistor and method of manufacturing the same
KR100758343B1 (ko) 탄화 규소 반도체 장치
CN211605160U (zh) 半导体器件
CN102222619B (zh) 半导体装置的制造方法
JPH02249277A (ja) 半導体装置
CN119835952A (zh) 半导体器件及其制备方法
KR101060637B1 (ko) 전력 반도체 소자의 제조방법
CN118352393A (zh) 场效应晶体管及其制备方法
CN115708224A (zh) 半导体装置以及其制造方法
JP2008060149A (ja) 接合型電界効果トランジスタおよびその製造方法
JPH0738106A (ja) 半導体装置の製造方法
JP2010182820A (ja) 半導体装置およびその製造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20160311

Address after: Chiba County, Japan

Patentee after: DynaFine Semiconductor Co.,Ltd.

Address before: Chiba, Chiba, Japan

Patentee before: Seiko Instruments Inc.

CP01 Change in the name or title of a patent holder

Address after: Chiba County, Japan

Patentee after: ABLIC Inc.

Address before: Chiba County, Japan

Patentee before: DynaFine Semiconductor Co.,Ltd.

CP01 Change in the name or title of a patent holder
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20120627

Termination date: 20210725

CF01 Termination of patent right due to non-payment of annual fee