JP2006019518A - 横型トレンチmosfet - Google Patents
横型トレンチmosfet Download PDFInfo
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- JP2006019518A JP2006019518A JP2004195888A JP2004195888A JP2006019518A JP 2006019518 A JP2006019518 A JP 2006019518A JP 2004195888 A JP2004195888 A JP 2004195888A JP 2004195888 A JP2004195888 A JP 2004195888A JP 2006019518 A JP2006019518 A JP 2006019518A
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- 239000004065 semiconductor Substances 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 8
- 239000012535 impurity Substances 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 abstract description 2
- 230000015556 catabolic process Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
- H01L29/7825—Lateral DMOS transistors, i.e. LDMOS transistors with trench gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7834—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with a non-planar structure, e.g. the gate or the source or the drain being non-planar
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
【解決手段】 トレンチ構造を用いることで素子面積を増大させずにチャネル幅を増大させ、オン抵抗の低減を実現した横型トレンチMOSFETにおいて、トレンチ008の両端付近に多方向イオン注入によりソース層004およびドレイン層005を形成する。このような構成にすることでソース層004およびドレイン層005がトレンチ008より深く形成され、電子がチャネル全域に広がって流れ、実効的なL長も短くなることで更なるオン抵抗の低減化が実現できる。
【選択図】 図1
Description
(2)オフセット構造を有する(1)に記載の半導体装置にした。
(3)DDD構造を有する(1)に記載の半導体装置にした。
(4)LDMOS構造を有する(1)に記載の半導体装置にした。
(5)(1)から(4)に記載のいずれかの半導体装置の製造方法とした。
002・・・第2導電型高抵抗層
003・・・ゲート電極
004・・・ソース層
005・・・ドレイン層
006・・・ゲート絶縁膜
007・・・P型ウェル層
008・・・トレンチ
009・・・オフセット層
010・・・サイドウォール
011・・・第1導電型高抵抗層
012・・・N型ウェル層
Claims (4)
- 半導体基板表面に形成された第1導電型半導体層と、
前記第1導電型半導体層の表面からその途中の深さまで平行に形成されたトレンチと、
前記トレンチの両端部付近を除く表面部と前記第1導電型半導体層の表面部に形成されたゲート酸化膜を介して設けられたゲート電極と、
前記ゲート電極をマスクとし前記第1導電型半導体層の表面および前記トレンチ内側に第2導電型不純物をイオン注入することで、トレンチ底面より深い位置に形成された第2導電型半導体層を有することを特徴とする半導体装置。 - 更に、オフセット構造を有する請求項1に記載の半導体装置。
- 更に、DDD構造を有する請求項1に記載の半導体装置。
- 更に、LDMOS構造を有する請求項1に記載の半導体装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004195888A JP2006019518A (ja) | 2004-07-01 | 2004-07-01 | 横型トレンチmosfet |
US11/166,973 US20060001110A1 (en) | 2004-07-01 | 2005-06-24 | Lateral trench MOSFET |
CN200510089700.3A CN1716631A (zh) | 2004-07-01 | 2005-07-01 | 横向沟槽金属氧化物半导体场效应晶体管 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004195888A JP2006019518A (ja) | 2004-07-01 | 2004-07-01 | 横型トレンチmosfet |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2006019518A true JP2006019518A (ja) | 2006-01-19 |
Family
ID=35513009
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004195888A Withdrawn JP2006019518A (ja) | 2004-07-01 | 2004-07-01 | 横型トレンチmosfet |
Country Status (3)
Country | Link |
---|---|
US (1) | US20060001110A1 (ja) |
JP (1) | JP2006019518A (ja) |
CN (1) | CN1716631A (ja) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006294645A (ja) * | 2005-04-05 | 2006-10-26 | Seiko Instruments Inc | 半導体装置及びその製造方法 |
JP2008192985A (ja) * | 2007-02-07 | 2008-08-21 | Seiko Instruments Inc | 半導体装置、及び半導体装置の製造方法 |
JP2009032905A (ja) * | 2007-07-27 | 2009-02-12 | Seiko Instruments Inc | 半導体装置およびその製造方法 |
WO2009028375A1 (ja) * | 2007-08-28 | 2009-03-05 | Seiko Instruments Inc. | 半導体装置及びその製造方法 |
JP2009081397A (ja) * | 2007-09-27 | 2009-04-16 | Fuji Electric Device Technology Co Ltd | 半導体装置および半導体装置の製造方法 |
JP2009206145A (ja) * | 2008-02-26 | 2009-09-10 | Seiko Instruments Inc | 半導体装置及びその製造方法 |
US7808021B2 (en) | 2007-02-27 | 2010-10-05 | Nec Electronics Corporation | Lateral MOSFET and manufacturing method thereof |
JP2013080955A (ja) * | 2012-12-26 | 2013-05-02 | Seiko Instruments Inc | 半導体装置 |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5448082B2 (ja) * | 2010-03-05 | 2014-03-19 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US20120028425A1 (en) * | 2010-08-02 | 2012-02-02 | Hamilton Lu | Methods for fabricating trench metal oxide semiconductor field effect transistors |
US8928116B2 (en) | 2012-07-31 | 2015-01-06 | Silanna Semiconductor U.S.A., Inc. | Power device integration on a common substrate |
US8994105B2 (en) | 2012-07-31 | 2015-03-31 | Azure Silicon LLC | Power device integration on a common substrate |
US9412881B2 (en) | 2012-07-31 | 2016-08-09 | Silanna Asia Pte Ltd | Power device integration on a common substrate |
US8847310B1 (en) | 2012-07-31 | 2014-09-30 | Azure Silicon LLC | Power device integration on a common substrate |
US10290702B2 (en) | 2012-07-31 | 2019-05-14 | Silanna Asia Pte Ltd | Power device on bulk substrate |
US8674440B2 (en) | 2012-07-31 | 2014-03-18 | Io Semiconductor Inc. | Power device integration on a common substrate |
US20150076618A1 (en) * | 2013-09-19 | 2015-03-19 | GlobalFoundries, Inc. | Integrated circuits with a corrugated gate, and methods for producing the same |
US9923059B1 (en) | 2017-02-20 | 2018-03-20 | Silanna Asia Pte Ltd | Connection arrangements for integrated lateral diffusion field effect transistors |
US10083897B2 (en) | 2017-02-20 | 2018-09-25 | Silanna Asia Pte Ltd | Connection arrangements for integrated lateral diffusion field effect transistors having a backside contact |
CN110176500A (zh) * | 2019-06-25 | 2019-08-27 | 无锡沃达科半导体技术有限公司 | 平面结构沟道金氧半场效晶体管及其加工方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0575121A (ja) * | 1991-09-18 | 1993-03-26 | Fujitsu Ltd | 半導体装置 |
JPH05275694A (ja) * | 1992-03-26 | 1993-10-22 | Nec Corp | 半導体集積回路装置 |
JPH08264764A (ja) * | 1995-03-22 | 1996-10-11 | Toshiba Corp | 半導体装置 |
JPH11103058A (ja) * | 1997-07-31 | 1999-04-13 | Toshiba Corp | 半導体装置 |
JP2000077659A (ja) * | 1998-08-31 | 2000-03-14 | Nec Corp | 半導体素子 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US5923980A (en) * | 1996-10-30 | 1999-07-13 | Advanced Micro Devices, Inc. | Trench transistor with localized source/drain regions implanted through voids in trench |
US6118149A (en) * | 1997-03-17 | 2000-09-12 | Kabushiki Kaisha Toshiba | Trench gate MOSFET |
US6355955B1 (en) * | 1998-05-14 | 2002-03-12 | Advanced Micro Devices, Inc. | Transistor and a method for forming the transistor with elevated and/or relatively shallow source/drain regions to achieve enhanced gate electrode formation |
-
2004
- 2004-07-01 JP JP2004195888A patent/JP2006019518A/ja not_active Withdrawn
-
2005
- 2005-06-24 US US11/166,973 patent/US20060001110A1/en not_active Abandoned
- 2005-07-01 CN CN200510089700.3A patent/CN1716631A/zh active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0575121A (ja) * | 1991-09-18 | 1993-03-26 | Fujitsu Ltd | 半導体装置 |
JPH05275694A (ja) * | 1992-03-26 | 1993-10-22 | Nec Corp | 半導体集積回路装置 |
JPH08264764A (ja) * | 1995-03-22 | 1996-10-11 | Toshiba Corp | 半導体装置 |
JPH11103058A (ja) * | 1997-07-31 | 1999-04-13 | Toshiba Corp | 半導体装置 |
JP2000077659A (ja) * | 1998-08-31 | 2000-03-14 | Nec Corp | 半導体素子 |
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006294645A (ja) * | 2005-04-05 | 2006-10-26 | Seiko Instruments Inc | 半導体装置及びその製造方法 |
JP2008192985A (ja) * | 2007-02-07 | 2008-08-21 | Seiko Instruments Inc | 半導体装置、及び半導体装置の製造方法 |
KR101473003B1 (ko) * | 2007-02-07 | 2014-12-15 | 세이코 인스트루 가부시키가이샤 | 반도체 장치 및 반도체 장치의 제조 방법 |
US7808021B2 (en) | 2007-02-27 | 2010-10-05 | Nec Electronics Corporation | Lateral MOSFET and manufacturing method thereof |
JP2009032905A (ja) * | 2007-07-27 | 2009-02-12 | Seiko Instruments Inc | 半導体装置およびその製造方法 |
KR101520485B1 (ko) * | 2007-07-27 | 2015-05-14 | 세이코 인스트루 가부시키가이샤 | 반도체 소자 및 그 제조 방법 |
KR20100065152A (ko) * | 2007-08-28 | 2010-06-15 | 세이코 인스트루 가부시키가이샤 | 반도체 장치 및 그 제조 방법 |
EP2187431A1 (en) * | 2007-08-28 | 2010-05-19 | Seiko Instruments Inc. | Semiconductor device and method for manufacturing the same |
EP2187431A4 (en) * | 2007-08-28 | 2012-02-15 | Seiko Instr Inc | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
US8390061B2 (en) | 2007-08-28 | 2013-03-05 | Seiko Instruments Inc. | Semiconductor device having a trench structure and method for manufacturing the same |
JP2009054840A (ja) * | 2007-08-28 | 2009-03-12 | Seiko Instruments Inc | 半導体装置及びその製造方法 |
WO2009028375A1 (ja) * | 2007-08-28 | 2009-03-05 | Seiko Instruments Inc. | 半導体装置及びその製造方法 |
KR101635648B1 (ko) | 2007-08-28 | 2016-07-01 | 에스아이아이 세미컨덕터 가부시키가이샤 | 반도체 장치 및 그 제조 방법 |
KR101747615B1 (ko) * | 2007-08-28 | 2017-06-14 | 에스아이아이 세미컨덕터 가부시키가이샤 | 반도체 장치 및 그 제조 방법 |
JP2009081397A (ja) * | 2007-09-27 | 2009-04-16 | Fuji Electric Device Technology Co Ltd | 半導体装置および半導体装置の製造方法 |
JP2009206145A (ja) * | 2008-02-26 | 2009-09-10 | Seiko Instruments Inc | 半導体装置及びその製造方法 |
KR101618613B1 (ko) * | 2008-02-26 | 2016-05-09 | 에스아이아이 세미컨덕터 가부시키가이샤 | 반도체 장치 및 그 제조 방법 |
JP2013080955A (ja) * | 2012-12-26 | 2013-05-02 | Seiko Instruments Inc | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
US20060001110A1 (en) | 2006-01-05 |
CN1716631A (zh) | 2006-01-04 |
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