JP2010147477A5 - - Google Patents

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Publication number
JP2010147477A5
JP2010147477A5 JP2009286443A JP2009286443A JP2010147477A5 JP 2010147477 A5 JP2010147477 A5 JP 2010147477A5 JP 2009286443 A JP2009286443 A JP 2009286443A JP 2009286443 A JP2009286443 A JP 2009286443A JP 2010147477 A5 JP2010147477 A5 JP 2010147477A5
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JP
Japan
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thickness
trench
buffer layer
conductivity type
region
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JP2009286443A
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English (en)
Japanese (ja)
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JP2010147477A (ja
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Priority claimed from US12/317,297 external-priority patent/US7871882B2/en
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Publication of JP2010147477A publication Critical patent/JP2010147477A/ja
Publication of JP2010147477A5 publication Critical patent/JP2010147477A5/ja
Pending legal-status Critical Current

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JP2009286443A 2008-12-20 2009-12-17 シリコンウェハ上にパワートランジスタデバイスを製造する方法 Pending JP2010147477A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/317,297 US7871882B2 (en) 2008-12-20 2008-12-20 Method of fabricating a deep trench insulated gate bipolar transistor

Publications (2)

Publication Number Publication Date
JP2010147477A JP2010147477A (ja) 2010-07-01
JP2010147477A5 true JP2010147477A5 (enExample) 2013-03-14

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JP2009286443A Pending JP2010147477A (ja) 2008-12-20 2009-12-17 シリコンウェハ上にパワートランジスタデバイスを製造する方法

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US (4) US7871882B2 (enExample)
EP (3) EP2482321A3 (enExample)
JP (1) JP2010147477A (enExample)
CN (1) CN101789396B (enExample)

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