JP2016506082A5 - - Google Patents
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- Publication number
- JP2016506082A5 JP2016506082A5 JP2015550821A JP2015550821A JP2016506082A5 JP 2016506082 A5 JP2016506082 A5 JP 2016506082A5 JP 2015550821 A JP2015550821 A JP 2015550821A JP 2015550821 A JP2015550821 A JP 2015550821A JP 2016506082 A5 JP2016506082 A5 JP 2016506082A5
- Authority
- JP
- Japan
- Prior art keywords
- field plate
- type dopant
- heavily doped
- semiconductor layer
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/732,284 US9853140B2 (en) | 2012-12-31 | 2012-12-31 | Adaptive charge balanced MOSFET techniques |
| US13/732,284 | 2012-12-31 | ||
| PCT/US2013/078129 WO2014106127A1 (en) | 2012-12-31 | 2013-12-27 | Adaptive charge balanced mosfet techniques |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016506082A JP2016506082A (ja) | 2016-02-25 |
| JP2016506082A5 true JP2016506082A5 (enExample) | 2017-10-26 |
| JP6249571B2 JP6249571B2 (ja) | 2017-12-20 |
Family
ID=51016180
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015550821A Active JP6249571B2 (ja) | 2012-12-31 | 2013-12-27 | 適応電荷平衡ｍｏｓｆｅｔ技法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9853140B2 (enExample) |
| EP (1) | EP2939272B1 (enExample) |
| JP (1) | JP6249571B2 (enExample) |
| KR (1) | KR101786278B1 (enExample) |
| CN (1) | CN105027290B (enExample) |
| WO (1) | WO2014106127A1 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9853140B2 (en) | 2012-12-31 | 2017-12-26 | Vishay-Siliconix | Adaptive charge balanced MOSFET techniques |
| US20180012974A1 (en) * | 2014-11-18 | 2018-01-11 | Rohm Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| TWI599041B (zh) * | 2015-11-23 | 2017-09-11 | 節能元件控股有限公司 | 具有底部閘極之金氧半場效電晶體功率元件及其製作方法 |
| WO2017130374A1 (ja) | 2016-01-29 | 2017-08-03 | 新電元工業株式会社 | パワー半導体装置及びパワー半導体装置の製造方法 |
| JP7470075B2 (ja) | 2021-03-10 | 2024-04-17 | 株式会社東芝 | 半導体装置 |
| JP7614977B2 (ja) | 2021-08-18 | 2025-01-16 | 株式会社東芝 | 半導体装置およびその製造方法 |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6252288B1 (en) | 1999-01-19 | 2001-06-26 | Rockwell Science Center, Llc | High power trench-based rectifier with improved reverse breakdown characteristic |
| JP2002100772A (ja) | 2000-07-17 | 2002-04-05 | Toshiba Corp | 電力用半導体装置及びその製造方法 |
| US7132712B2 (en) | 2002-11-05 | 2006-11-07 | Fairchild Semiconductor Corporation | Trench structure having one or more diodes embedded therein adjacent a PN junction |
| US6677641B2 (en) | 2001-10-17 | 2004-01-13 | Fairchild Semiconductor Corporation | Semiconductor structure with improved smaller forward voltage loss and higher blocking capability |
| DE10235198B4 (de) | 2001-08-02 | 2011-08-11 | Fuji Electric Systems Co., Ltd. | Leistungs-Halbleitergleichrichter mit ringförmigen Gräben |
| JP4209260B2 (ja) | 2003-06-04 | 2009-01-14 | Ｎｅｃエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| CN103199017B (zh) | 2003-12-30 | 2016-08-03 | 飞兆半导体公司 | 形成掩埋导电层方法、材料厚度控制法、形成晶体管方法 |
| US7326617B2 (en) * | 2005-08-23 | 2008-02-05 | United Microelectronics Corp. | Method of fabricating a three-dimensional multi-gate device |
| US8420483B2 (en) * | 2007-01-09 | 2013-04-16 | Maxpower Semiconductor, Inc. | Method of manufacture for a semiconductor device |
| US20080272429A1 (en) | 2007-05-04 | 2008-11-06 | Icemos Technology Corporation | Superjunction devices having narrow surface layout of terminal structures and methods of manufacturing the devices |
| WO2009102684A2 (en) | 2008-02-14 | 2009-08-20 | Maxpower Semiconductor Inc. | Semiconductor device structures and related processes |
| US20100264486A1 (en) | 2009-04-20 | 2010-10-21 | Texas Instruments Incorporated | Field plate trench mosfet transistor with graded dielectric liner thickness |
| US10026835B2 (en) | 2009-10-28 | 2018-07-17 | Vishay-Siliconix | Field boosted metal-oxide-semiconductor field effect transistor |
| US8354711B2 (en) * | 2010-01-11 | 2013-01-15 | Maxpower Semiconductor, Inc. | Power MOSFET and its edge termination |
| WO2011087994A2 (en) | 2010-01-12 | 2011-07-21 | Maxpower Semiconductor Inc. | Devices, components and methods combining trench field plates with immobile electrostatic charge |
| JP5762689B2 (ja) | 2010-02-26 | 2015-08-12 | 株式会社東芝 | 半導体装置 |
| TWI407564B (zh) * | 2010-06-07 | 2013-09-01 | 科軒微電子股份有限公司 | 具有溝槽底部多晶矽結構之功率半導體及其製造方法 |
| JP5580150B2 (ja) | 2010-09-09 | 2014-08-27 | 株式会社東芝 | 半導体装置 |
| US8680607B2 (en) | 2011-06-20 | 2014-03-25 | Maxpower Semiconductor, Inc. | Trench gated power device with multiple trench width and its fabrication process |
| JP2013131512A (ja) | 2011-12-20 | 2013-07-04 | Sumitomo Electric Ind Ltd | 半導体装置およびその製造方法 |
| JP2013145770A (ja) | 2012-01-13 | 2013-07-25 | Sumitomo Electric Ind Ltd | 半導体装置およびその製造方法 |
| US9853140B2 (en) | 2012-12-31 | 2017-12-26 | Vishay-Siliconix | Adaptive charge balanced MOSFET techniques |
-
2012
- 2012-12-31 US US13/732,284 patent/US9853140B2/en active Active
-
2013
- 2013-12-27 EP EP13868438.6A patent/EP2939272B1/en active Active
- 2013-12-27 KR KR1020157017449A patent/KR101786278B1/ko active Active
- 2013-12-27 JP JP2015550821A patent/JP6249571B2/ja active Active
- 2013-12-27 CN CN201380073977.XA patent/CN105027290B/zh active Active
- 2013-12-27 WO PCT/US2013/078129 patent/WO2014106127A1/en not_active Ceased
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