JP2017084839A5 - - Google Patents
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- JP2017084839A5 JP2017084839A5 JP2015208171A JP2015208171A JP2017084839A5 JP 2017084839 A5 JP2017084839 A5 JP 2017084839A5 JP 2015208171 A JP2015208171 A JP 2015208171A JP 2015208171 A JP2015208171 A JP 2015208171A JP 2017084839 A5 JP2017084839 A5 JP 2017084839A5
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- JP
- Japan
- Prior art keywords
- trench
- base region
- conductivity type
- semiconductor device
- drift layer
- Prior art date
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- 239000004065 semiconductor Substances 0.000 claims 16
- 239000010410 layer Substances 0.000 claims 10
- 239000000758 substrate Substances 0.000 claims 7
- 239000012535 impurity Substances 0.000 claims 4
- 230000000149 penetrating effect Effects 0.000 claims 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims 3
- 238000004519 manufacturing process Methods 0.000 claims 2
- 239000002344 surface layer Substances 0.000 claims 2
- 238000005530 etching Methods 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015208171A JP6528640B2 (ja) | 2015-10-22 | 2015-10-22 | 半導体装置及びその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015208171A JP6528640B2 (ja) | 2015-10-22 | 2015-10-22 | 半導体装置及びその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017084839A JP2017084839A (ja) | 2017-05-18 |
| JP2017084839A5 true JP2017084839A5 (enExample) | 2018-03-08 |
| JP6528640B2 JP6528640B2 (ja) | 2019-06-12 |
Family
ID=58713185
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015208171A Active JP6528640B2 (ja) | 2015-10-22 | 2015-10-22 | 半導体装置及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6528640B2 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6991370B2 (ja) * | 2019-01-08 | 2022-01-12 | 三菱電機株式会社 | 半導体装置及び電力変換装置 |
| JP6969586B2 (ja) * | 2019-04-23 | 2021-11-24 | 株式会社デンソー | 半導体装置およびその製造方法 |
| CN112992682A (zh) * | 2019-12-13 | 2021-06-18 | 华润微电子（重庆）有限公司 | 沟槽型场效应晶体管结构及其制备方法 |
| EP4101007A1 (en) * | 2020-02-07 | 2022-12-14 | Infineon Technologies Austria AG | Transistor device and method of fabricating a transistor device |
| JP7661711B2 (ja) * | 2021-02-05 | 2025-04-15 | 富士電機株式会社 | 炭化珪素半導体装置 |
| EP4276910A1 (en) * | 2022-05-13 | 2023-11-15 | Infineon Technologies Austria AG | Transistor device, semiconductor package and method of fabricating a transistor device |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE59814430D1 (de) * | 1998-12-18 | 2010-03-25 | Infineon Technologies Ag | Feldeffekt-transistoranordnung mit einer grabenförmigen gate-elektrode und einer zusätzlichen hochdotierten schicht im bodygebiet |
| JP3552208B2 (ja) * | 2000-05-26 | 2004-08-11 | 株式会社東芝 | 半導体装置 |
| JP2004055976A (ja) * | 2002-07-23 | 2004-02-19 | Toyota Industries Corp | トレンチ構造を有する半導体装置 |
| JP2013232533A (ja) * | 2012-04-27 | 2013-11-14 | Rohm Co Ltd | 半導体装置および半導体装置の製造方法 |
-
2015
- 2015-10-22 JP JP2015208171A patent/JP6528640B2/ja active Active
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