JP6528640B2 - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

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Publication number
JP6528640B2
JP6528640B2 JP2015208171A JP2015208171A JP6528640B2 JP 6528640 B2 JP6528640 B2 JP 6528640B2 JP 2015208171 A JP2015208171 A JP 2015208171A JP 2015208171 A JP2015208171 A JP 2015208171A JP 6528640 B2 JP6528640 B2 JP 6528640B2
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base region
trench
conductivity type
region
corner
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JP2015208171A
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Japanese (ja)
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JP2017084839A (ja
JP2017084839A5 (enExample
Inventor
泰宏 香川
泰宏 香川
梨菜 田中
梨菜 田中
裕 福井
裕 福井
勝俊 菅原
勝俊 菅原
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Priority to JP2015208171A priority Critical patent/JP6528640B2/ja
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Publication of JP2017084839A5 publication Critical patent/JP2017084839A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 

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  • Electrodes Of Semiconductors (AREA)
JP2015208171A 2015-10-22 2015-10-22 半導体装置及びその製造方法 Active JP6528640B2 (ja)

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JP2015208171A JP6528640B2 (ja) 2015-10-22 2015-10-22 半導体装置及びその製造方法

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JP2015208171A JP6528640B2 (ja) 2015-10-22 2015-10-22 半導体装置及びその製造方法

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JP2017084839A JP2017084839A (ja) 2017-05-18
JP2017084839A5 JP2017084839A5 (enExample) 2018-03-08
JP6528640B2 true JP6528640B2 (ja) 2019-06-12

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022529411A (ja) * 2019-12-13 2022-06-22 華潤微電子（重慶）有限公司 トレンチ型電界効果トランジスタの構造及びその製造方法
EP4101007A1 (en) * 2020-02-07 2022-12-14 Infineon Technologies Austria AG Transistor device and method of fabricating a transistor device

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6991370B2 (ja) * 2019-01-08 2022-01-12 三菱電機株式会社 半導体装置及び電力変換装置
JP6969586B2 (ja) * 2019-04-23 2021-11-24 株式会社デンソー 半導体装置およびその製造方法
JP7661711B2 (ja) * 2021-02-05 2025-04-15 富士電機株式会社 炭化珪素半導体装置
EP4276910A1 (en) * 2022-05-13 2023-11-15 Infineon Technologies Austria AG Transistor device, semiconductor package and method of fabricating a transistor device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE59814430D1 (de) * 1998-12-18 2010-03-25 Infineon Technologies Ag Feldeffekt-transistoranordnung mit einer grabenförmigen gate-elektrode und einer zusätzlichen hochdotierten schicht im bodygebiet
JP3552208B2 (ja) * 2000-05-26 2004-08-11 株式会社東芝 半導体装置
JP2004055976A (ja) * 2002-07-23 2004-02-19 Toyota Industries Corp トレンチ構造を有する半導体装置
JP2013232533A (ja) * 2012-04-27 2013-11-14 Rohm Co Ltd 半導体装置および半導体装置の製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022529411A (ja) * 2019-12-13 2022-06-22 華潤微電子（重慶）有限公司 トレンチ型電界効果トランジスタの構造及びその製造方法
EP3933895A4 (en) * 2019-12-13 2022-08-24 China Resources Microelectronics (Chongqing) Co., Ltd Trench field effect transistor structure, and manufacturing method for same
JP7368493B2 (ja) 2019-12-13 2023-10-24 華潤微電子（重慶）有限公司 トレンチ型電界効果トランジスタの構造及びその製造方法
EP4101007A1 (en) * 2020-02-07 2022-12-14 Infineon Technologies Austria AG Transistor device and method of fabricating a transistor device

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JP2017084839A (ja) 2017-05-18

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