JP2022529411A - トレンチ型電界効果トランジスタの構造及びその製造方法 - Google Patents
トレンチ型電界効果トランジスタの構造及びその製造方法 Download PDFInfo
- Publication number
- JP2022529411A JP2022529411A JP2021559613A JP2021559613A JP2022529411A JP 2022529411 A JP2022529411 A JP 2022529411A JP 2021559613 A JP2021559613 A JP 2021559613A JP 2021559613 A JP2021559613 A JP 2021559613A JP 2022529411 A JP2022529411 A JP 2022529411A
- Authority
- JP
- Japan
- Prior art keywords
- trench
- gate
- region
- source
- drawer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005669 field effect Effects 0.000 title claims abstract description 58
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 38
- 210000000746 body region Anatomy 0.000 claims abstract description 94
- 238000002347 injection Methods 0.000 claims abstract description 70
- 239000007924 injection Substances 0.000 claims abstract description 70
- 238000000034 method Methods 0.000 claims abstract description 58
- 239000000758 substrate Substances 0.000 claims abstract description 47
- 239000004065 semiconductor Substances 0.000 claims abstract description 38
- 238000000605 extraction Methods 0.000 claims abstract description 36
- 238000005468 ion implantation Methods 0.000 claims abstract description 14
- 238000002513 implantation Methods 0.000 claims abstract description 10
- 229910021332 silicide Inorganic materials 0.000 claims description 22
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 21
- 229910052751 metal Inorganic materials 0.000 claims description 21
- 150000002500 ions Chemical class 0.000 claims description 9
- 230000005685 electric field effect Effects 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 34
- 230000015556 catabolic process Effects 0.000 abstract description 10
- 230000015572 biosynthetic process Effects 0.000 abstract description 7
- 238000005516 engineering process Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 abstract 1
- 230000008685 targeting Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 description 12
- 239000011810 insulating material Substances 0.000 description 10
- 239000010936 titanium Substances 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000008439 repair process Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000005549 size reduction Methods 0.000 description 2
- 239000013589 supplement Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 230000009469 supplementation Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0856—Source regions
- H01L29/0865—Disposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0856—Source regions
- H01L29/0869—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66613—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation
- H01L29/66621—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation using etching to form a recess at the gate location
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66666—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
〔第1実施形態〕
〔第2実施形態〕
図14乃至図15に示すように、本発明は、更に比較例を提供する。当該比較例で提供するトレンチ型電界効果トランジスタは、半導体基板300、エピタキシャル層301、ボディ領域302、ソース303、ソースコンタクトホール304及びソース電極構造305を含む。当該比較例では、ソースコンタクトホール304によってソース303とボディ領域302の電気的な引き出しを実現する。当該比較例では、ソースコンタクトホールを作製する必要があるため、一定のデバイス空間を占有するとともに、フォトリソグラフィプロセスの制限を受ける。このほか、本例のデバイス構造は、限界寸法(ピッチサイズ)の更なる縮小に伴ってソース領域が小さくなることにより、O.L margin(over lay photo,2層を整列させる際に測定)といったソースコンタクトホールのプロセス難度が上昇する。また、ソースコンタクトホールにTi/Wを充填してソース電極構造を形成する際に、デバイスの限界寸法CDが小さくなることにより、Tiプロセス等が制限を受ける結果、Tiをコンタクトホールに均一にスパッタリングできなくなり、均一なシリサイドを形成不可能となる。また、孔内のTi/Wが良好な金属接触を形成し得ない。且つ、ボディ領域にフローティングが発生しやすく、ソースとボディ領域が等電位による引き出しを形成不可能となるため、動作過程でデバイスに早期ブレークダウンが発生する。これに対し、本発明の第1実施形態及び第2実施形態の方案によれば、上記の課題を効果的に解決可能である。
Claims (13)
- トレンチ型電界効果トランジスタの構造の製造方法であって、
半導体基板を提供し、前記半導体基板上にエピタキシャル層を形成し、
前記エピタキシャル層に、間隔を置いて平行に配列されるいくつかの第1トレンチと、間隔を置いて平行に配列され、前記第1トレンチと交差することによって隣り合う前記第1トレンチと共同でいくつかの注入領域を規定するいくつかの第2トレンチを形成し、
前記第1トレンチの内壁に第1ゲート媒体層を形成し、前記第1ゲート媒体層上に、前記第1トレンチ内に充填される第1ゲート構造を形成し、前記第2トレンチの内壁に第2ゲート媒体層を形成し、前記第2ゲート媒体層上に、前記第2トレンチ内に充填される第2ゲート構造を形成し、
前記エピタキシャル層にイオン注入を行うことにより、前記注入領域に、前記第1トレンチ及び前記第2トレンチに隣接するボディ領域を形成し、
前記ボディ領域に少なくとも1つの遮蔽領域を形成するために、前記エピタキシャル層上に、前記第1トレンチと前記第2トレンチとの交差箇所を覆うとともに前記交差箇所の周りの前記注入領域を更に覆い、間隔を置かれた注入マスクユニットをいくつか含むソース注入マスクを形成し、
前記ボディ領域にソースを形成しかつ前記遮蔽領域をボディ引出領域とするために、前記ソース注入マスクに基づいて前記エピタキシャル層にイオン注入を行い、
前記エピタキシャル層上に、前記ソースの上面及び前記ボディ引出領域の上面と接触するソース電極構造を形成することにより、前記ソース及び前記ボディ領域を電気的に引き出す、とのステップを含むことを特徴とするトレンチ型電界効果トランジスタの構造の製造方法。 - 前記ソースを形成したあと、更に、前記第1ゲート構造をエッチバックして第1ゲートを形成し、前記第1ゲート上に、前記第1トレンチ内に充填される第1絶縁層を形成し、前記第2ゲート構造をエッチバックして第2ゲートを形成し、前記第2ゲート上に、前記第2トレンチ内に充填される第2絶縁層を形成し、
前記ソース電極構造は、更に、前記第1絶縁層及び前記第2絶縁層の上面にも延びて形成されていることを特徴とする請求項1に記載のトレンチ型電界効果トランジスタの構造の製造方法。 - 前記第1絶縁層及び前記第2絶縁層を形成したあと、更に、少なくとも前記ソースの上面と前記ボディ引出領域の上面にソース上金属シリサイド層を形成し、
前記ソース電極構造は、前記ソース上金属シリサイド層の表面に形成されていることを特徴とする請求項2に記載のトレンチ型電界効果トランジスタの構造の製造方法。 - 前記第1ゲート媒体層及び前記第2ゲート媒体層を形成する前に、更に、前記第1トレンチ及び前記第2トレンチの内壁の表面に犠牲酸化層を形成して、前記犠牲酸化層を除去することによりトレンチの内壁を修復する、とのステップを含むことを特徴とする請求項1に記載のトレンチ型電界効果トランジスタの構造の製造方法。
- 前記注入マスクユニットは、前記第1トレンチと前記第2トレンチとの前記交差箇所を覆うとともに前記交差箇所周りの4つの前記注入領域を更に覆うことにより、前記ボディ領域ごとに4つの前記ボディ引出領域を形成することを特徴とする請求項1に記載のトレンチ型電界効果トランジスタの構造の製造方法。
- 前記第1トレンチと前記第2トレンチは互いに垂直であり、形成される前記注入領域の形状は四角形を含んでおり、前記注入マスクユニットの形状は四角形を含んでおり、且つ、前記注入マスクユニットと各前記注入領域との交差領域の面積は同じであることを特徴とする請求項5に記載のトレンチ型電界効果トランジスタの構造の製造方法。
- 前記トレンチ型電界効果トランジスタの構造の製造方法は、更に、引出ゲート構造を作製するステップを含み、前記エピタキシャル層には、デバイス領域と端末領域が定義されており、前記第1トレンチ及び前記第2トレンチは前記デバイス領域に形成されており、前記引出ゲート構造を作製するステップでは、前記第1トレンチ及び前記第2トレンチを形成すると同時に、更に、前記端末領域に引出ゲートトレンチを作製し、前記引出ゲートトレンチの内壁に引出ゲート媒体層を形成し、前記引出ゲート媒体層の表面に引出ゲートを形成し、且つ、前記端末領域に、前記引出ゲートに電気的に接続される引出ゲート電極構造を形成し、且つ、前記引出ゲート電極構造は、前記ソース電極構造と絶縁されていることを特徴とする請求項1に記載のトレンチ型電界効果トランジスタの構造の製造方法。
- 前記引出ゲートの上面と前記ソースの上面は面一であり、
前記引出ゲートを形成したあと、更に、前記引出ゲートの上面に引出ゲート上金属シリサイド層を作製するステップを含み、
且つ、前記引出ゲート電極構造は、前記引出ゲート上金属シリサイド層の表面に形成されることを特徴とする請求項7に記載のトレンチ型電界効果トランジスタの構造の製造方法。 - トレンチ型電界効果トランジスタの構造であって、
半導体基板と、
前記半導体基板上に形成されたエピタキシャル層であって、間隔を置いて平行に配列されるいくつかの第1トレンチと、間隔を置いて平行に配列され、前記第1トレンチと交差することによりいくつかの交差箇所を形成しており、且つ、隣り合う前記第1トレンチと共同でいくつかの注入領域を規定しているいくつかの第2トレンチとが形成されている前記エピタキシャル層と、
前記第1トレンチ及び前記第2トレンチの内壁にそれぞれ形成された第1ゲート媒体層及び第2ゲート媒体層と、
前記第1ゲート媒体層の表面に形成され、前記第1トレンチ内に充填されている第1ゲートと、
前記第2ゲート媒体層の表面に形成され、前記第2トレンチ内に充填されている第2ゲートと、
前記注入領域に形成され、前記第1トレンチ及び前記第2トレンチに隣接しており、周りの前記交差箇所に隣接しているボディ引出領域を少なくとも1つ含むボディ領域と、
前記ボディ領域に形成され、前記ボディ引出領域に隣接しており、且つ、上面が前記ボディ引出領域の上面と面一であるソースと、
前記ソースの上面及び前記ボディ引出領域の上面と接触することにより、前記ソース及び前記ボディ領域を電気的に引き出すソース電極構造と、を含むことを特徴とする構造。 - 前記トレンチ型電界効果トランジスタの構造は、更に、前記第1ゲート上に形成されるとともに前記第1トレンチ内に充填される第1絶縁層と、前記第2ゲート上に形成されるとともに前記第2トレンチ内に充填される第2絶縁層とを含み、且つ、前記ソース電極構造は、更に、前記第1絶縁層及び前記第2絶縁層の上面にも延びて形成されていることを特徴とする請求項9に記載のトレンチ型電界効果トランジスタの構造。
- 前記トレンチ型電界効果トランジスタの構造は、更に、ソース上金属シリサイド層を含み、前記ソース上金属シリサイド層は、少なくとも前記ソースの上面と前記ボディ領域の上面に形成されており、且つ、前記ソース電極構造は、前記ソース上金属シリサイド層の表面に形成されていることを特徴とする請求項9に記載のトレンチ型電界効果トランジスタの構造。
- 前記第1トレンチと前記第2トレンチは互いに垂直であり、前記注入領域の形状は四角形を含んでおり、前記ボディ領域ごとに4つの前記ボディ引出領域を含み、各前記ボディ引出領域の面積は等しく、且つ、隣り合う前記ボディ引出領域の間に間隔を有していることを特徴とする請求項9に記載のトレンチ型電界効果トランジスタの構造。
- 前記トレンチ型電界効果トランジスタの構造は、更に、引出ゲート構造を含み、前記エピタキシャル層にはデバイス領域と端末領域が定義されており、前記第1トレンチ及び前記第2トレンチは前記デバイス領域に形成されており、前記引出ゲート構造は前記端末領域に形成されており、
前記引出ゲート構造は、引出ゲートトレンチ、前記引出ゲートトレンチの内壁に形成された引出ゲート媒体層、前記引出ゲート媒体層の表面に形成された引出ゲート、及び、前記端末領域に形成されて前記引出ゲートに電気的に接続される引出ゲート電極構造を含み、且つ、前記引出ゲート電極構造は前記ソース電極構造と絶縁されていることを特徴とする請求項9に記載のトレンチ型電界効果トランジスタの構造。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201911283322.0A CN112992682A (zh) | 2019-12-13 | 2019-12-13 | 沟槽型场效应晶体管结构及其制备方法 |
CN201911283322.0 | 2019-12-13 | ||
PCT/CN2019/130508 WO2021114437A1 (zh) | 2019-12-13 | 2019-12-31 | 沟槽型场效应晶体管结构及其制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2022529411A true JP2022529411A (ja) | 2022-06-22 |
JP7368493B2 JP7368493B2 (ja) | 2023-10-24 |
Family
ID=76328827
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021559613A Active JP7368493B2 (ja) | 2019-12-13 | 2019-12-31 | トレンチ型電界効果トランジスタの構造及びその製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US11652170B2 (ja) |
EP (1) | EP3933895B1 (ja) |
JP (1) | JP7368493B2 (ja) |
KR (1) | KR102548225B1 (ja) |
CN (1) | CN112992682A (ja) |
WO (1) | WO2021114437A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11862697B2 (en) * | 2020-04-30 | 2024-01-02 | Changxin Memory Technologies, Inc. | Method for manufacturing buried gate and method for manufacturing semiconductor device |
CN117747671A (zh) * | 2024-02-20 | 2024-03-22 | 深圳市威兆半导体股份有限公司 | Sgt mosfet器件及其制备方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2894820B2 (ja) * | 1990-10-25 | 1999-05-24 | 株式会社東芝 | 半導体装置 |
EP1351313A2 (en) * | 2002-03-22 | 2003-10-08 | Siliconix Incorporated | Structures of and methods of fabricating trench-gated MIS devices |
US20040173844A1 (en) * | 2003-03-05 | 2004-09-09 | Advanced Analogic Technologies, Inc. Advanced Analogic Technologies (Hongkong) Limited | Trench power MOSFET with planarized gate bus |
US20070075360A1 (en) * | 2005-09-30 | 2007-04-05 | Alpha &Omega Semiconductor, Ltd. | Cobalt silicon contact barrier metal process for high density semiconductor power devices |
US20110070708A1 (en) * | 2009-09-21 | 2011-03-24 | Force Mos Technology Co. Ltd. | Method for making trench MOSFET with shallow trench structures |
JP6528640B2 (ja) * | 2015-10-22 | 2019-06-12 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5034785A (en) | 1986-03-24 | 1991-07-23 | Siliconix Incorporated | Planar vertical channel DMOS structure |
EP0675529A3 (en) | 1994-03-30 | 1998-06-03 | Denso Corporation | Process for manufacturing vertical MOS transistors |
US6057558A (en) | 1997-03-05 | 2000-05-02 | Denson Corporation | Silicon carbide semiconductor device and manufacturing method thereof |
JP3855386B2 (ja) * | 1997-08-27 | 2006-12-06 | 日産自動車株式会社 | 半導体装置 |
GB9907184D0 (en) * | 1999-03-30 | 1999-05-26 | Philips Electronics Nv | A method of manufacturing a semiconductor device |
JP2001024193A (ja) * | 1999-07-13 | 2001-01-26 | Hitachi Ltd | トレンチゲート型半導体装置およびその製造方法 |
US6781196B2 (en) * | 2002-03-11 | 2004-08-24 | General Semiconductor, Inc. | Trench DMOS transistor having improved trench structure |
JP2006501666A (ja) * | 2002-10-04 | 2006-01-12 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | パワー半導体デバイス |
US7235842B2 (en) * | 2003-07-12 | 2007-06-26 | Nxp B.V. | Insulated gate power semiconductor devices |
JP4860122B2 (ja) * | 2004-06-25 | 2012-01-25 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
CN100468774C (zh) * | 2004-09-29 | 2009-03-11 | 松下电器产业株式会社 | 半导体装置 |
WO2006108011A2 (en) * | 2005-04-06 | 2006-10-12 | Fairchild Semiconductor Corporation | Trenched-gate field effect transistors and methods of forming the same |
JP2007180310A (ja) * | 2005-12-28 | 2007-07-12 | Toshiba Corp | 半導体装置 |
JP5168876B2 (ja) * | 2006-10-17 | 2013-03-27 | 富士電機株式会社 | 半導体装置およびその製造方法 |
JP5210564B2 (ja) * | 2007-07-27 | 2013-06-12 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US8174067B2 (en) * | 2008-12-08 | 2012-05-08 | Fairchild Semiconductor Corporation | Trench-based power semiconductor devices with increased breakdown voltage characteristics |
JP2012169384A (ja) * | 2011-02-11 | 2012-09-06 | Denso Corp | 炭化珪素半導体装置およびその製造方法 |
JP5568036B2 (ja) * | 2011-03-09 | 2014-08-06 | トヨタ自動車株式会社 | Igbt |
CN103489901A (zh) * | 2012-06-11 | 2014-01-01 | 比亚迪股份有限公司 | 半导体结构及其形成方法 |
CN103151309B (zh) * | 2013-03-11 | 2015-03-25 | 中航(重庆)微电子有限公司 | 深沟槽功率mos器件及其制备方法 |
JP6256192B2 (ja) * | 2014-05-26 | 2018-01-10 | トヨタ自動車株式会社 | 半導体装置 |
DE102014109859B4 (de) * | 2014-07-14 | 2021-08-26 | Infineon Technologies Austria Ag | Halbleitervorrichtungen mit einer feldelektrode, synchron-gleichrichtungsvorrichtung und energieversorgung |
CN105470307B (zh) * | 2015-12-22 | 2018-08-21 | 上海华虹宏力半导体制造有限公司 | 沟槽栅功率晶体管及其制造方法 |
US9570605B1 (en) * | 2016-05-09 | 2017-02-14 | Nxp B.V. | Semiconductor device having a plurality of source lines being laid in both X and Y directions |
CN108231900A (zh) * | 2017-12-28 | 2018-06-29 | 中山汉臣电子科技有限公司 | 一种功率半导体器件及其制备方法 |
-
2019
- 2019-12-13 CN CN201911283322.0A patent/CN112992682A/zh active Pending
- 2019-12-31 US US17/600,113 patent/US11652170B2/en active Active
- 2019-12-31 KR KR1020217026145A patent/KR102548225B1/ko active IP Right Grant
- 2019-12-31 WO PCT/CN2019/130508 patent/WO2021114437A1/zh unknown
- 2019-12-31 EP EP19955525.1A patent/EP3933895B1/en active Active
- 2019-12-31 JP JP2021559613A patent/JP7368493B2/ja active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2894820B2 (ja) * | 1990-10-25 | 1999-05-24 | 株式会社東芝 | 半導体装置 |
EP1351313A2 (en) * | 2002-03-22 | 2003-10-08 | Siliconix Incorporated | Structures of and methods of fabricating trench-gated MIS devices |
US20040173844A1 (en) * | 2003-03-05 | 2004-09-09 | Advanced Analogic Technologies, Inc. Advanced Analogic Technologies (Hongkong) Limited | Trench power MOSFET with planarized gate bus |
US20070075360A1 (en) * | 2005-09-30 | 2007-04-05 | Alpha &Omega Semiconductor, Ltd. | Cobalt silicon contact barrier metal process for high density semiconductor power devices |
US20110070708A1 (en) * | 2009-09-21 | 2011-03-24 | Force Mos Technology Co. Ltd. | Method for making trench MOSFET with shallow trench structures |
JP6528640B2 (ja) * | 2015-10-22 | 2019-06-12 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20210115018A (ko) | 2021-09-24 |
CN112992682A (zh) | 2021-06-18 |
JP7368493B2 (ja) | 2023-10-24 |
EP3933895A1 (en) | 2022-01-05 |
EP3933895A4 (en) | 2022-08-24 |
WO2021114437A1 (zh) | 2021-06-17 |
US11652170B2 (en) | 2023-05-16 |
EP3933895B1 (en) | 2023-11-29 |
US20220302308A1 (en) | 2022-09-22 |
KR102548225B1 (ko) | 2023-06-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6031265A (en) | Enhancing DMOS device ruggedness by reducing transistor parasitic resistance and by inducing breakdown near gate runners and termination area | |
TWI475614B (zh) | 溝渠裝置結構及製造 | |
JP2019517738A (ja) | スーパージャンクション構造のパワートランジスタ及びその製造方法 | |
US20110039383A1 (en) | Shielded gate trench MOSFET device and fabrication | |
US20110049618A1 (en) | Fabrication of trench dmos device having thick bottom shielding oxide | |
JP2007059766A (ja) | トレンチ構造半導体装置及びその製造方法 | |
CN104821333A (zh) | 用于沟槽金属氧化物半导体场效应晶体管(mosfet)中的低米勒电容的较厚的底部氧化物 | |
CN104779166B (zh) | 一种沟槽式分栅功率器件及其制造方法 | |
US20010003367A1 (en) | Trenched dmos device with low gate charges | |
KR20210115016A (ko) | 트렌치 전계효과 트랜지스터 구조 및 그 제조 방법 | |
CN105551964A (zh) | 具有屏蔽栅的沟槽分离侧栅mosfet的制造方法 | |
CN113053738A (zh) | 一种分裂栅型沟槽mos器件及其制备方法 | |
JP7368493B2 (ja) | トレンチ型電界効果トランジスタの構造及びその製造方法 | |
CN112117332A (zh) | Ldmos器件及工艺方法 | |
CN107819031A (zh) | 晶体管及其形成方法、半导体器件 | |
US6492691B2 (en) | High integration density MOS technology power device structure | |
US7977192B2 (en) | Fabrication method of trenched metal-oxide-semiconductor device | |
TWI601295B (zh) | 斷閘極金氧半場效電晶體 | |
US10896959B2 (en) | Top structure of super junction MOSFETs and methods of fabrication | |
CN116913780A (zh) | 一种屏蔽栅沟槽型mos器件结构及其制备方法 | |
JP3677489B2 (ja) | 縦型電界効果トランジスタ | |
US8569134B2 (en) | Method to fabricate a closed cell trench power MOSFET structure | |
CN111223931A (zh) | 沟槽mosfet及其制造方法 | |
US11444167B2 (en) | Method of manufacturing trench type semiconductor device | |
TWI675409B (zh) | 屏蔽閘極式金氧半場效應電晶體及其製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20211006 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20221122 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230220 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20230530 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230621 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20230919 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20231012 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7368493 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |