JP2017504964A5 - - Google Patents

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Publication number
JP2017504964A5
JP2017504964A5 JP2016539924A JP2016539924A JP2017504964A5 JP 2017504964 A5 JP2017504964 A5 JP 2017504964A5 JP 2016539924 A JP2016539924 A JP 2016539924A JP 2016539924 A JP2016539924 A JP 2016539924A JP 2017504964 A5 JP2017504964 A5 JP 2017504964A5
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JP
Japan
Prior art keywords
termination
trench
guard ring
substrate
field plate
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JP2016539924A
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English (en)
Japanese (ja)
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JP2017504964A (ja
JP6576926B2 (ja
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Priority claimed from PCT/EP2014/076443 external-priority patent/WO2015090971A1/en
Publication of JP2017504964A publication Critical patent/JP2017504964A/ja
Publication of JP2017504964A5 publication Critical patent/JP2017504964A5/ja
Application granted granted Critical
Publication of JP6576926B2 publication Critical patent/JP6576926B2/ja
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JP2016539924A 2013-12-16 2014-12-03 半導体装置のエッジ終端および対応する製造方法 Active JP6576926B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP13197534.4 2013-12-16
EP13197534 2013-12-16
PCT/EP2014/076443 WO2015090971A1 (en) 2013-12-16 2014-12-03 Edge termination for semiconductor devices and corresponding fabrication method

Publications (3)

Publication Number Publication Date
JP2017504964A JP2017504964A (ja) 2017-02-09
JP2017504964A5 true JP2017504964A5 (enExample) 2018-01-18
JP6576926B2 JP6576926B2 (ja) 2019-09-18

Family

ID=49765396

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016539924A Active JP6576926B2 (ja) 2013-12-16 2014-12-03 半導体装置のエッジ終端および対応する製造方法

Country Status (5)

Country Link
US (1) US9859360B2 (enExample)
EP (1) EP3084833B1 (enExample)
JP (1) JP6576926B2 (enExample)
CN (1) CN105814690B (enExample)
WO (1) WO2015090971A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015212464B4 (de) * 2015-07-03 2019-05-23 Infineon Technologies Ag Leistungshalbleiterrandstruktur und Verfahren zu deren Herstellung
US10998443B2 (en) 2016-04-15 2021-05-04 Taiwan Semiconductor Manufacturing Co., Ltd. Epi block structure in semiconductor product providing high breakdown voltage
JP6816278B2 (ja) * 2016-11-24 2021-01-20 アーベーベー・シュバイツ・アーゲーＡＢＢ Ｓｃｈｗｅｉｚ ＡＧ フローティングフィールドリング終端を有するパワー半導体装置
US10312710B1 (en) * 2017-01-31 2019-06-04 The United States Of America, As Represented By The Secretary Of The Navy Energy recovery pulse forming network
CN108461541A (zh) * 2017-02-17 2018-08-28 中芯国际集成电路制造(上海)有限公司 Igbt的终端结构、igbt器件及其制造方法
CN108054196B (zh) * 2017-12-08 2020-09-04 南京溧水高新创业投资管理有限公司 半导体功率器件的终端结构及其制作方法
DE102019103899A1 (de) 2019-02-15 2020-08-20 Infineon Technologies Ag Leistungshalbleiterbauelement und Verfahren zur Verarbeitung eines Leistungshalbleiterbauelements
CN111293172B (zh) * 2020-02-19 2023-10-10 北京工业大学 一种逆阻igbt的终端结构
CN120937526A (zh) * 2023-03-30 2025-11-11 罗姆股份有限公司 半导体装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10014660C2 (de) * 2000-03-24 2002-08-29 Infineon Technologies Ag Halbleiteranordnung mit einer durch einen Hohlraum von einer Driftstrecke getrennten Trenchelektrode
JP2007109712A (ja) * 2005-10-11 2007-04-26 Shindengen Electric Mfg Co Ltd トランジスタ、ダイオード
JP4735235B2 (ja) * 2005-12-19 2011-07-27 トヨタ自動車株式会社 絶縁ゲート型半導体装置およびその製造方法
JP5188037B2 (ja) * 2006-06-20 2013-04-24 株式会社東芝 半導体装置
DE102006036347B4 (de) * 2006-08-03 2012-01-12 Infineon Technologies Austria Ag Halbleiterbauelement mit einer platzsparenden Randstruktur
JP2009088345A (ja) * 2007-10-01 2009-04-23 Toshiba Corp 半導体装置
JP5741567B2 (ja) * 2009-07-31 2015-07-01 富士電機株式会社 半導体装置
CN101969068A (zh) * 2010-08-06 2011-02-09 浙江大学 一种高压功率半导体器件的边缘终端结构
US8785279B2 (en) * 2012-07-30 2014-07-22 Alpha And Omega Semiconductor Incorporated High voltage field balance metal oxide field effect transistor (FBM)
US8680613B2 (en) * 2012-07-30 2014-03-25 Alpha And Omega Semiconductor Incorporated Termination design for high voltage device
CN103165604B (zh) * 2011-12-19 2016-11-09 英飞凌科技奥地利有限公司 具有节省空间的边缘结构的半导体部件
CN103715232B (zh) * 2012-09-28 2017-10-10 中国科学院微电子研究所 用于半导体功率器件的沟槽式终端及其制备方法

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