JP2016526285A5 - - Google Patents

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Publication number
JP2016526285A5
JP2016526285A5 JP2016512918A JP2016512918A JP2016526285A5 JP 2016526285 A5 JP2016526285 A5 JP 2016526285A5 JP 2016512918 A JP2016512918 A JP 2016512918A JP 2016512918 A JP2016512918 A JP 2016512918A JP 2016526285 A5 JP2016526285 A5 JP 2016526285A5
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JP
Japan
Prior art keywords
diode
substrate
layer
semiconductor material
back surface
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JP2016512918A
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English (en)
Japanese (ja)
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JP2016526285A (ja
JP6254259B2 (ja
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Priority claimed from US13/887,723 external-priority patent/US9093462B2/en
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Publication of JP2016526285A publication Critical patent/JP2016526285A/ja
Publication of JP2016526285A5 publication Critical patent/JP2016526285A5/ja
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Publication of JP6254259B2 publication Critical patent/JP6254259B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2016512918A 2013-05-06 2014-04-23 静電放電ダイオード Expired - Fee Related JP6254259B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/887,723 2013-05-06
US13/887,723 US9093462B2 (en) 2013-05-06 2013-05-06 Electrostatic discharge diode
PCT/US2014/035076 WO2014182449A1 (en) 2013-05-06 2014-04-23 Electrostatic discharge diode

Publications (3)

Publication Number Publication Date
JP2016526285A JP2016526285A (ja) 2016-09-01
JP2016526285A5 true JP2016526285A5 (enExample) 2017-03-23
JP6254259B2 JP6254259B2 (ja) 2017-12-27

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ID=50819974

Family Applications (1)

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JP2016512918A Expired - Fee Related JP6254259B2 (ja) 2013-05-06 2014-04-23 静電放電ダイオード

Country Status (6)

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US (2) US9093462B2 (enExample)
EP (1) EP2994937B1 (enExample)
JP (1) JP6254259B2 (enExample)
KR (1) KR101755555B1 (enExample)
CN (1) CN105190888B (enExample)
WO (1) WO2014182449A1 (enExample)

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EP3035385A1 (en) * 2014-12-16 2016-06-22 IMEC vzw Semiconductor interposer comprising a schottky diode and a method for fabricating the interposer
US9583462B2 (en) * 2015-01-22 2017-02-28 Qualcomm Incorporated Damascene re-distribution layer (RDL) in fan out split die application
US9922970B2 (en) * 2015-02-13 2018-03-20 Qualcomm Incorporated Interposer having stacked devices
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CN107994000B (zh) * 2017-12-15 2021-01-12 浙江清华柔性电子技术研究院 用于系统级封装的tsv转接板及其制备方法
CN108054139B (zh) * 2017-12-15 2020-12-18 浙江清华柔性电子技术研究院 Tsv转接板及其制备方法
CN108109988B (zh) * 2017-12-15 2020-12-22 浙江清华柔性电子技术研究院 用于系统级封装的防静电装置
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CN108054133A (zh) * 2017-12-15 2018-05-18 西安科锐盛创新科技有限公司 集成电路抗静电转接板及其制备方法
CN108109957B (zh) * 2017-12-15 2020-12-25 浙江清华柔性电子技术研究院 系统级封装抗静电转接板
CN107946240A (zh) * 2017-12-15 2018-04-20 西安科锐盛创新科技有限公司 Tsv转接板及其制备方法
CN108109953B (zh) * 2017-12-15 2020-12-25 浙江清华柔性电子技术研究院 用于系统级封装的tsv转接板
CN108054156B (zh) * 2017-12-15 2021-09-03 西安科锐盛创新科技有限公司 用于系统级封装的防静电装置
CN109994425B (zh) * 2019-04-04 2021-07-30 上海迈铸半导体科技有限公司 填充基片的制备方法、填充基片及微孔互连结构制备方法
US11837641B2 (en) 2019-12-18 2023-12-05 Intel Corporation Gate-all-around integrated circuit structures having adjacent deep via substrate contacts for sub-fin electrical contact
US11424239B2 (en) * 2019-12-21 2022-08-23 Intel Corporation Diodes for package substrate electrostatic discharge (ESD) protection
US11264373B2 (en) 2019-12-21 2022-03-01 Intel Corporation Die backend diodes for electrostatic discharge (ESD) protection
DE102021107976A1 (de) * 2020-05-21 2021-11-25 Taiwan Semiconductor Manufacturing Co., Ltd. Elektrostatische entladungsschaltung und verfahren zum bilden dergleichen
US12046567B2 (en) 2020-05-21 2024-07-23 Taiwan Semiconductor Manufacturing Company Ltd. Electrostatic discharge circuit and method of forming the same
US11342246B2 (en) * 2020-07-21 2022-05-24 Qualcomm Incorporated Multi-terminal integrated passive devices embedded on die and a method for fabricating the multi-terminal integrated passive devices
JP7659629B2 (ja) * 2020-11-16 2025-04-09 ティーディーケイ・エレクトロニクス・アクチェンゲゼルシャフト Ｅｓｄ保護素子を有するシリコン基板
US11973075B2 (en) 2021-02-22 2024-04-30 Taiwan Semiconductor Manufacturing Company, Ltd. Dual substrate side ESD diode for high speed circuit

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US9093462B2 (en) 2013-05-06 2015-07-28 Qualcomm Incorporated Electrostatic discharge diode

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