JP6254259B2 - 静電放電ダイオード - Google Patents

静電放電ダイオード Download PDF

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Publication number
JP6254259B2
JP6254259B2 JP2016512918A JP2016512918A JP6254259B2 JP 6254259 B2 JP6254259 B2 JP 6254259B2 JP 2016512918 A JP2016512918 A JP 2016512918A JP 2016512918 A JP2016512918 A JP 2016512918A JP 6254259 B2 JP6254259 B2 JP 6254259B2
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substrate
diode
layer
semiconductor material
tsv wafer
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Japanese (ja)
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JP2016526285A (ja
JP2016526285A5 (enExample
Inventor
ヴィディヤ・ラマチャンドラン
ブライアン・エム・ヘンダーソン
シーチュン・グ
チュウ−グアン・タン
ジュン・ピル・キム
テヒュン・キム
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クアルコム，インコーポレイテッド
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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    • H10D89/931—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs characterised by the dispositions of the protective arrangements
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    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12032—Schottky diode

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2016512918A 2013-05-06 2014-04-23 静電放電ダイオード Expired - Fee Related JP6254259B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/887,723 2013-05-06
US13/887,723 US9093462B2 (en) 2013-05-06 2013-05-06 Electrostatic discharge diode
PCT/US2014/035076 WO2014182449A1 (en) 2013-05-06 2014-04-23 Electrostatic discharge diode

Publications (3)

Publication Number Publication Date
JP2016526285A JP2016526285A (ja) 2016-09-01
JP2016526285A5 JP2016526285A5 (enExample) 2017-03-23
JP6254259B2 true JP6254259B2 (ja) 2017-12-27

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JP2016512918A Expired - Fee Related JP6254259B2 (ja) 2013-05-06 2014-04-23 静電放電ダイオード

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Country Link
US (2) US9093462B2 (enExample)
EP (1) EP2994937B1 (enExample)
JP (1) JP6254259B2 (enExample)
KR (1) KR101755555B1 (enExample)
CN (1) CN105190888B (enExample)
WO (1) WO2014182449A1 (enExample)

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CN105190888B (zh) 2017-08-22
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CN105190888A (zh) 2015-12-23
US9093462B2 (en) 2015-07-28
US9379201B2 (en) 2016-06-28
EP2994937A1 (en) 2016-03-16
WO2014182449A1 (en) 2014-11-13
US20140327105A1 (en) 2014-11-06
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KR101755555B1 (ko) 2017-07-07
US20150333053A1 (en) 2015-11-19

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