CN105190888B - 静电放电二极管 - Google Patents

静电放电二极管 Download PDF

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Publication number
CN105190888B
CN105190888B CN201480025342.7A CN201480025342A CN105190888B CN 105190888 B CN105190888 B CN 105190888B CN 201480025342 A CN201480025342 A CN 201480025342A CN 105190888 B CN105190888 B CN 105190888B
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China
Prior art keywords
substrate
diode
backside
layer
semiconductor material
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Expired - Fee Related
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CN201480025342.7A
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English (en)
Chinese (zh)
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CN105190888A (zh
Inventor
V·拉马钱德兰
B·M·亨德森
S·顾
C-G·谭
J·P·金
T·金
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Qualcomm Inc
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Qualcomm Inc
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
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    • H10D89/931—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs characterised by the dispositions of the protective arrangements
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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN201480025342.7A 2013-05-06 2014-04-23 静电放电二极管 Expired - Fee Related CN105190888B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/887,723 2013-05-06
US13/887,723 US9093462B2 (en) 2013-05-06 2013-05-06 Electrostatic discharge diode
PCT/US2014/035076 WO2014182449A1 (en) 2013-05-06 2014-04-23 Electrostatic discharge diode

Publications (2)

Publication Number Publication Date
CN105190888A CN105190888A (zh) 2015-12-23
CN105190888B true CN105190888B (zh) 2017-08-22

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US (2) US9093462B2 (enExample)
EP (1) EP2994937B1 (enExample)
JP (1) JP6254259B2 (enExample)
KR (1) KR101755555B1 (enExample)
CN (1) CN105190888B (enExample)
WO (1) WO2014182449A1 (enExample)

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Publication number Priority date Publication date Assignee Title
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