KR101755555B1 - 정전기 방전 다이오드 - Google Patents

정전기 방전 다이오드 Download PDF

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KR101755555B1
KR101755555B1 KR1020157033748A KR20157033748A KR101755555B1 KR 101755555 B1 KR101755555 B1 KR 101755555B1 KR 1020157033748 A KR1020157033748 A KR 1020157033748A KR 20157033748 A KR20157033748 A KR 20157033748A KR 101755555 B1 KR101755555 B1 KR 101755555B1
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substrate
diode
backside
layer
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Korean (ko)
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KR20160004356A (ko
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비드야 라마찬드란
브라이언 엠. 헨더슨
쉬쿤 구
치에우-구안 탄
정필 김
태현 김
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퀄컴 인코포레이티드
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1020157033748A 2013-05-06 2014-04-23 정전기 방전 다이오드 Expired - Fee Related KR101755555B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/887,723 2013-05-06
US13/887,723 US9093462B2 (en) 2013-05-06 2013-05-06 Electrostatic discharge diode
PCT/US2014/035076 WO2014182449A1 (en) 2013-05-06 2014-04-23 Electrostatic discharge diode

Publications (2)

Publication Number Publication Date
KR20160004356A KR20160004356A (ko) 2016-01-12
KR101755555B1 true KR101755555B1 (ko) 2017-07-07

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US (2) US9093462B2 (enExample)
EP (1) EP2994937B1 (enExample)
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EP2994937B1 (en) 2016-12-14
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