JP2015073095A5 - - Google Patents
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- Publication number
- JP2015073095A5 JP2015073095A5 JP2014183997A JP2014183997A JP2015073095A5 JP 2015073095 A5 JP2015073095 A5 JP 2015073095A5 JP 2014183997 A JP2014183997 A JP 2014183997A JP 2014183997 A JP2014183997 A JP 2014183997A JP 2015073095 A5 JP2015073095 A5 JP 2015073095A5
- Authority
- JP
- Japan
- Prior art keywords
- conductor
- forming
- dielectric layer
- filling
- space
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004020 conductor Substances 0.000 claims 22
- 238000000034 method Methods 0.000 claims 13
- 239000004065 semiconductor Substances 0.000 claims 8
- 125000006850 spacer group Chemical group 0.000 claims 6
- 238000004519 manufacturing process Methods 0.000 claims 3
- 238000005530 etching Methods 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 229910052723 transition metal Inorganic materials 0.000 claims 1
- -1 transition metal nitride Chemical class 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/045,680 US9012278B2 (en) | 2013-10-03 | 2013-10-03 | Method of making a wire-based semiconductor device |
| US14/045,680 | 2013-10-03 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015073095A JP2015073095A (ja) | 2015-04-16 |
| JP2015073095A5 true JP2015073095A5 (enExample) | 2017-06-08 |
| JP6226839B2 JP6226839B2 (ja) | 2017-11-08 |
Family
ID=49995284
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014183997A Active JP6226839B2 (ja) | 2013-10-03 | 2014-09-10 | ワイヤ−ベース半導体装置を製造する方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US9012278B2 (enExample) |
| JP (1) | JP6226839B2 (enExample) |
| KR (1) | KR101824155B1 (enExample) |
| TW (1) | TWI609491B (enExample) |
Families Citing this family (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9012278B2 (en) * | 2013-10-03 | 2015-04-21 | Asm Ip Holding B.V. | Method of making a wire-based semiconductor device |
| WO2015147865A1 (en) * | 2014-03-28 | 2015-10-01 | Intel Corporation | Aspect ratio trapping (art) for fabricating vertical semiconductor devices |
| JP5692884B1 (ja) * | 2014-08-19 | 2015-04-01 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッドUnisantis Electronics Singapore Pte Ltd. | Sgtを有する半導体装置の製造方法 |
| US9871111B2 (en) * | 2014-09-18 | 2018-01-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method |
| US20160268256A1 (en) * | 2015-03-13 | 2016-09-15 | Qualcomm Incorporated | Complementary metal-oxide semiconductor (cmos) transistor and tunnel field-effect transistor (tfet) on a single substrate |
| US9972622B2 (en) * | 2015-05-13 | 2018-05-15 | Imec Vzw | Method for manufacturing a CMOS device and associated device |
| TWI566417B (zh) * | 2015-12-04 | 2017-01-11 | 財團法人工業技術研究院 | p型金屬氧化物半導體材料與電晶體 |
| US9882047B2 (en) * | 2016-02-01 | 2018-01-30 | International Business Machines Corporation | Self-aligned replacement metal gate spacerless vertical field effect transistor |
| US10043796B2 (en) | 2016-02-01 | 2018-08-07 | Qualcomm Incorporated | Vertically stacked nanowire field effect transistors |
| CN109643725B (zh) * | 2016-08-08 | 2022-07-29 | 东京毅力科创株式会社 | 三维半导体器件及制造方法 |
| US10361300B2 (en) | 2017-02-28 | 2019-07-23 | International Business Machines Corporation | Asymmetric vertical device |
| CN108878521B (zh) * | 2017-05-09 | 2021-10-15 | 中芯国际集成电路制造(上海)有限公司 | 垂直隧穿场效应晶体管及其形成方法 |
| US9960272B1 (en) * | 2017-05-16 | 2018-05-01 | International Business Machines Corporation | Bottom contact resistance reduction on VFET |
| US10475808B2 (en) * | 2017-08-30 | 2019-11-12 | Macronix International Co., Ltd. | Three dimensional memory device and method for fabricating the same |
| CN109494249B (zh) * | 2017-09-11 | 2022-05-24 | 联华电子股份有限公司 | 半导体元件及其制造方法 |
| KR102337408B1 (ko) * | 2017-09-13 | 2021-12-10 | 삼성전자주식회사 | 수직 채널을 가지는 반도체 소자 및 그 제조 방법 |
| CN108511344B (zh) * | 2018-02-09 | 2021-01-22 | 中国科学院微电子研究所 | 垂直纳米线晶体管与其制作方法 |
| US10424653B1 (en) * | 2018-05-21 | 2019-09-24 | International Business Machines Corporation | Vertical transport field effect transistor on silicon with defined junctions |
| US10833079B2 (en) | 2019-01-02 | 2020-11-10 | International Business Machines Corporation | Dual transport orientation for stacked vertical transport field-effect transistors |
| US11164791B2 (en) * | 2019-02-25 | 2021-11-02 | International Business Machines Corporation | Contact formation for stacked vertical transport field-effect transistors |
| CN110021603B (zh) * | 2019-04-11 | 2021-09-14 | 德淮半导体有限公司 | 半导体结构及其形成方法 |
| US11075266B2 (en) | 2019-04-29 | 2021-07-27 | International Business Machines Corporation | Vertically stacked fin semiconductor devices |
| US11646205B2 (en) * | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
| US11202912B2 (en) | 2019-12-19 | 2021-12-21 | Medtronic, Inc. | Posture-based control of electrical stimulation therapy |
| US11179567B2 (en) | 2019-12-19 | 2021-11-23 | Medtronic, Inc. | Hysteresis compensation for detection of ECAPs |
| US11439825B2 (en) | 2019-12-19 | 2022-09-13 | Medtronic, Inc. | Determining posture state from ECAPs |
| US12097373B2 (en) | 2020-06-10 | 2024-09-24 | Medtronic, Inc. | Control policy settings for electrical stimulation therapy |
| US11857793B2 (en) | 2020-06-10 | 2024-01-02 | Medtronic, Inc. | Managing storage of sensed information |
| WO2022153676A1 (ja) * | 2021-01-15 | 2022-07-21 | 国立大学法人東北大学 | 半導体デバイス、集積回路及びその製造方法 |
| US20220359208A1 (en) * | 2021-05-07 | 2022-11-10 | Applied Materials, Inc. | Process integration to reduce contact resistance in semiconductor device |
| US20250169091A1 (en) | 2023-11-21 | 2025-05-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Radical Treatment in Supercritical Fluid for Gate Dielectric Quality Improvement to CFET Structure |
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| US4450472A (en) | 1981-03-02 | 1984-05-22 | The Board Of Trustees Of The Leland Stanford Junior University | Method and means for improved heat removal in compact semiconductor integrated circuits and similar devices utilizing coolant chambers and microscopic channels |
| US4938742A (en) | 1988-02-04 | 1990-07-03 | Smits Johannes G | Piezoelectric micropump with microvalves |
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| US5241450A (en) | 1992-03-13 | 1993-08-31 | The United States Of America As Represented By The United States Department Of Energy | Three dimensional, multi-chip module |
| US5218515A (en) | 1992-03-13 | 1993-06-08 | The United States Of America As Represented By The United States Department Of Energy | Microchannel cooling of face down bonded chips |
| US5461003A (en) | 1994-05-27 | 1995-10-24 | Texas Instruments Incorporated | Multilevel interconnect structure with air gaps formed between metal leads |
| US5619177A (en) | 1995-01-27 | 1997-04-08 | Mjb Company | Shape memory alloy microactuator having an electrostatic force and heating means |
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| US5929476A (en) * | 1996-06-21 | 1999-07-27 | Prall; Kirk | Semiconductor-on-insulator transistor and memory circuitry employing semiconductor-on-insulator transistors |
| US5763951A (en) | 1996-07-22 | 1998-06-09 | Northrop Grumman Corporation | Non-mechanical magnetic pump for liquid cooling |
| WO1998003997A1 (en) | 1996-07-22 | 1998-01-29 | Northrop Grumman Corporation | Closed loop liquid cooling within rf modules |
| US5801442A (en) | 1996-07-22 | 1998-09-01 | Northrop Grumman Corporation | Microchannel cooling of high power semiconductor devices |
| FR2754391B1 (fr) | 1996-10-08 | 1999-04-16 | Sgs Thomson Microelectronics | Structure de contact a facteur de forme eleve pour circuits integres |
| US5901037A (en) | 1997-06-18 | 1999-05-04 | Northrop Grumman Corporation | Closed loop liquid cooling for semiconductor RF amplifier modules |
| US6272169B1 (en) | 1998-06-09 | 2001-08-07 | Advanced Micro Devices, Inc. | Software based modems that interact with the computing enviroment |
| US6060383A (en) | 1998-08-10 | 2000-05-09 | Nogami; Takeshi | Method for making multilayered coaxial interconnect structure |
| US6197641B1 (en) * | 1998-08-28 | 2001-03-06 | Lucent Technologies Inc. | Process for fabricating vertical transistors |
| US6027975A (en) * | 1998-08-28 | 2000-02-22 | Lucent Technologies Inc. | Process for fabricating vertical transistors |
| US6406995B1 (en) | 1998-09-30 | 2002-06-18 | Intel Corporation | Pattern-sensitive deposition for damascene processing |
| US6329118B1 (en) | 1999-06-21 | 2001-12-11 | Intel Corporation | Method for patterning dual damascene interconnects using a sacrificial light absorbing material |
| US6291353B1 (en) | 1999-08-19 | 2001-09-18 | International Business Machines Corporation | Lateral patterning |
| US6727169B1 (en) | 1999-10-15 | 2004-04-27 | Asm International, N.V. | Method of making conformal lining layers for damascene metallization |
| EP1266054B1 (en) | 2000-03-07 | 2006-12-20 | Asm International N.V. | Graded thin films |
| US6759325B2 (en) | 2000-05-15 | 2004-07-06 | Asm Microchemistry Oy | Sealing porous structures |
| US6482733B2 (en) | 2000-05-15 | 2002-11-19 | Asm Microchemistry Oy | Protective layers prior to alternating layer deposition |
| SG105459A1 (en) | 2000-07-24 | 2004-08-27 | Micron Technology Inc | Mems heat pumps for integrated circuit heat dissipation |
| US6569754B2 (en) | 2000-08-24 | 2003-05-27 | The Regents Of The University Of Michigan | Method for making a module including a microplatform |
| US6686604B2 (en) * | 2001-09-21 | 2004-02-03 | Agere Systems Inc. | Multiple operating voltage vertical replacement-gate (VRG) transistor |
| US6770122B2 (en) | 2001-12-12 | 2004-08-03 | E. I. Du Pont De Nemours And Company | Copper deposition using copper formate complexes |
| US6716693B1 (en) | 2003-03-27 | 2004-04-06 | Chartered Semiconductor Manufacturing Ltd. | Method of forming a surface coating layer within an opening within a body by atomic layer deposition |
| US7018917B2 (en) | 2003-11-20 | 2006-03-28 | Asm International N.V. | Multilayer metallization |
| US7241655B2 (en) * | 2004-08-30 | 2007-07-10 | Micron Technology, Inc. | Method of fabricating a vertical wrap-around-gate field-effect-transistor for high density, low voltage logic and memory array |
| FR2897204B1 (fr) * | 2006-02-07 | 2008-05-30 | Ecole Polytechnique Etablissem | Structure de transistor vertical et procede de fabrication |
| US7892956B2 (en) * | 2007-09-24 | 2011-02-22 | International Business Machines Corporation | Methods of manufacture of vertical nanowire FET devices |
| JP2011228596A (ja) * | 2010-04-22 | 2011-11-10 | Shirado Takehide | 半導体装置及びその製造方法 |
| US9012278B2 (en) * | 2013-10-03 | 2015-04-21 | Asm Ip Holding B.V. | Method of making a wire-based semiconductor device |
-
2013
- 2013-10-03 US US14/045,680 patent/US9012278B2/en active Active
-
2014
- 2014-09-10 JP JP2014183997A patent/JP6226839B2/ja active Active
- 2014-09-22 TW TW103132556A patent/TWI609491B/zh active
- 2014-10-02 KR KR1020140133332A patent/KR101824155B1/ko active Active
-
2015
- 2015-04-03 US US14/678,301 patent/US9553148B2/en active Active
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