CN101969068A - 一种高压功率半导体器件的边缘终端结构 - Google Patents
一种高压功率半导体器件的边缘终端结构 Download PDFInfo
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- CN101969068A CN101969068A CN 201010246809 CN201010246809A CN101969068A CN 101969068 A CN101969068 A CN 101969068A CN 201010246809 CN201010246809 CN 201010246809 CN 201010246809 A CN201010246809 A CN 201010246809A CN 101969068 A CN101969068 A CN 101969068A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 9
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 6
- 229920005591 polysilicon Polymers 0.000 claims abstract description 6
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract 2
- 239000010949 copper Substances 0.000 claims abstract 2
- 229910052802 copper Inorganic materials 0.000 claims abstract 2
- 239000000463 material Substances 0.000 claims abstract 2
- 239000004411 aluminium Substances 0.000 claims description 2
- 230000001413 cellular effect Effects 0.000 abstract description 22
- 230000005684 electric field Effects 0.000 abstract description 20
- 230000015556 catabolic process Effects 0.000 abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000002146 bilateral effect Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
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CN 201010246809 CN101969068A (zh) | 2010-08-06 | 2010-08-06 | 一种高压功率半导体器件的边缘终端结构 |
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CN 201010246809 CN101969068A (zh) | 2010-08-06 | 2010-08-06 | 一种高压功率半导体器件的边缘终端结构 |
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CN 201010246809 Pending CN101969068A (zh) | 2010-08-06 | 2010-08-06 | 一种高压功率半导体器件的边缘终端结构 |
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Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102760754A (zh) * | 2012-07-31 | 2012-10-31 | 杭州士兰集成电路有限公司 | 耗尽型vdmos及其制造方法 |
CN103050539A (zh) * | 2012-12-18 | 2013-04-17 | 上海华虹Nec电子有限公司 | 超级结器件终端保护结构 |
CN103824879A (zh) * | 2014-01-30 | 2014-05-28 | 株洲南车时代电气股份有限公司 | 一种功率器件结终端结构与制造方法 |
CN104143566A (zh) * | 2013-05-10 | 2014-11-12 | 江西创成半导体有限责任公司 | 多晶硅场限环 |
CN104517855A (zh) * | 2014-09-11 | 2015-04-15 | 上海华虹宏力半导体制造有限公司 | 超级结半导体器件制造方法 |
CN104934469A (zh) * | 2014-03-18 | 2015-09-23 | 国家电网公司 | 一种igbt终端结构及其制造方法 |
CN105814690A (zh) * | 2013-12-16 | 2016-07-27 | Abb 技术有限公司 | 用于半导体器件的边缘终止和对应的制造方法 |
CN106298478A (zh) * | 2015-06-03 | 2017-01-04 | 北大方正集团有限公司 | 一种功率器件分压结构及其制作方法 |
CN106531781A (zh) * | 2016-11-15 | 2017-03-22 | 深圳深爱半导体股份有限公司 | 半导体器件的终端结构 |
CN109037309A (zh) * | 2018-07-26 | 2018-12-18 | 深圳市诚朗科技有限公司 | 一种功率器件终端结构及其制作方法 |
CN109509794A (zh) * | 2018-12-08 | 2019-03-22 | 程德明 | N+区边缘圆弧形结构的p+-i-n+型功率二极管 |
WO2021007973A1 (zh) * | 2019-07-18 | 2021-01-21 | 东南大学 | 一种沟槽型半导体功率器件终端保护结构及功率器件 |
CN112699588A (zh) * | 2021-01-08 | 2021-04-23 | 浙江大学 | 一种功率半导体芯片元胞的热电耦合建模方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090243027A1 (en) * | 2008-03-27 | 2009-10-01 | Renesas Technology Corp. | semiconductor integrated circuit device and a method of manufacturing the same |
-
2010
- 2010-08-06 CN CN 201010246809 patent/CN101969068A/zh active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090243027A1 (en) * | 2008-03-27 | 2009-10-01 | Renesas Technology Corp. | semiconductor integrated circuit device and a method of manufacturing the same |
Non-Patent Citations (2)
Title |
---|
《电力电子》 20100430 殷丽等 高压功率FRED结终端保护技术及其组合优化设计 51-54 1-4 , 第2期 2 * |
《电子器件》 20090630 张彦飞等 硅材料功率半导体器件结终端技术的新发展 538-546 1-4 第32卷, 第3期 2 * |
Cited By (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102760754B (zh) * | 2012-07-31 | 2015-07-15 | 杭州士兰集成电路有限公司 | 耗尽型vdmos及其制造方法 |
CN102760754A (zh) * | 2012-07-31 | 2012-10-31 | 杭州士兰集成电路有限公司 | 耗尽型vdmos及其制造方法 |
CN103050539A (zh) * | 2012-12-18 | 2013-04-17 | 上海华虹Nec电子有限公司 | 超级结器件终端保护结构 |
CN103050539B (zh) * | 2012-12-18 | 2016-06-08 | 上海华虹宏力半导体制造有限公司 | 超级结器件终端保护结构 |
CN104143566A (zh) * | 2013-05-10 | 2014-11-12 | 江西创成半导体有限责任公司 | 多晶硅场限环 |
CN105814690B (zh) * | 2013-12-16 | 2020-01-21 | Abb瑞士股份有限公司 | 用于半导体器件的边缘终止和对应的制造方法 |
CN105814690A (zh) * | 2013-12-16 | 2016-07-27 | Abb 技术有限公司 | 用于半导体器件的边缘终止和对应的制造方法 |
CN103824879A (zh) * | 2014-01-30 | 2014-05-28 | 株洲南车时代电气股份有限公司 | 一种功率器件结终端结构与制造方法 |
CN104934469B (zh) * | 2014-03-18 | 2019-02-05 | 国家电网公司 | 一种igbt终端结构及其制造方法 |
CN104934469A (zh) * | 2014-03-18 | 2015-09-23 | 国家电网公司 | 一种igbt终端结构及其制造方法 |
CN104517855A (zh) * | 2014-09-11 | 2015-04-15 | 上海华虹宏力半导体制造有限公司 | 超级结半导体器件制造方法 |
CN104517855B (zh) * | 2014-09-11 | 2017-10-24 | 上海华虹宏力半导体制造有限公司 | 超级结半导体器件制造方法 |
CN106298478A (zh) * | 2015-06-03 | 2017-01-04 | 北大方正集团有限公司 | 一种功率器件分压结构及其制作方法 |
CN106531781A (zh) * | 2016-11-15 | 2017-03-22 | 深圳深爱半导体股份有限公司 | 半导体器件的终端结构 |
CN109037309A (zh) * | 2018-07-26 | 2018-12-18 | 深圳市诚朗科技有限公司 | 一种功率器件终端结构及其制作方法 |
CN109037309B (zh) * | 2018-07-26 | 2021-09-21 | 南京紫江电子技术有限公司 | 一种功率器件终端结构及其制作方法 |
CN109509794A (zh) * | 2018-12-08 | 2019-03-22 | 程德明 | N+区边缘圆弧形结构的p+-i-n+型功率二极管 |
CN109509794B (zh) * | 2018-12-08 | 2024-06-11 | 程德明 | N+区边缘圆弧形结构的p+-i-n+型功率二极管 |
WO2021007973A1 (zh) * | 2019-07-18 | 2021-01-21 | 东南大学 | 一种沟槽型半导体功率器件终端保护结构及功率器件 |
CN112699588A (zh) * | 2021-01-08 | 2021-04-23 | 浙江大学 | 一种功率半导体芯片元胞的热电耦合建模方法 |
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Owner name: GUANGZHOU YUEJING HIGH TECHNOLOGY CO., LTD. |
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CB03 | Change of inventor or designer information |
Inventor after: Hu Jiaxian Inventor after: Han Yan Inventor after: Jie Yingliang Inventor after: Chen Supeng Inventor after: Zhang Shifeng Inventor after: Zhang Bin Inventor before: Hu Jiaxian Inventor before: Han Yan Inventor before: Zhang Shifeng Inventor before: Zhang Bin |
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Free format text: CORRECT: INVENTOR; FROM: HU JIAXIAN HAN YAN ZHANG SHIFENG ZHANG BIN TO: HU JIAXIAN HAN YAN JIE YINGLIANG CHEN SUPENG ZHANG SHIFENG ZHANG BIN |
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Effective date of registration: 20110822 Address after: 310027 Hangzhou, Zhejiang Province, Xihu District, Zhejiang Road, No. 38, No. Applicant after: Zhejiang University Co-applicant after: Guangzhou Yuejing High Technology Co., Ltd. Address before: 310027 Hangzhou, Zhejiang Province, Xihu District, Zhejiang Road, No. 38, No. Applicant before: Zhejiang University |
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Application publication date: 20110209 |