JP2016536781A5 - - Google Patents
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- Publication number
- JP2016536781A5 JP2016536781A5 JP2016520001A JP2016520001A JP2016536781A5 JP 2016536781 A5 JP2016536781 A5 JP 2016536781A5 JP 2016520001 A JP2016520001 A JP 2016520001A JP 2016520001 A JP2016520001 A JP 2016520001A JP 2016536781 A5 JP2016536781 A5 JP 2016536781A5
- Authority
- JP
- Japan
- Prior art keywords
- deep trench
- semiconductor device
- gate
- conductivity type
- vertical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/044,926 | 2013-10-03 | ||
| US14/044,926 US9123802B2 (en) | 2013-10-03 | 2013-10-03 | Vertical trench MOSFET device in integrated power technologies |
| PCT/US2014/057804 WO2015050792A1 (en) | 2013-10-03 | 2014-09-26 | Vertical trench mosfet device in integrated power technologies |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016536781A JP2016536781A (ja) | 2016-11-24 |
| JP2016536781A5 true JP2016536781A5 (enExample) | 2017-10-19 |
| JP6492068B2 JP6492068B2 (ja) | 2019-03-27 |
Family
ID=52776284
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016520001A Active JP6492068B2 (ja) | 2013-10-03 | 2014-09-26 | インテグレートされたパワー技術における垂直トレンチｍｏｓｆｅｔデバイス |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US9123802B2 (enExample) |
| EP (1) | EP3053193A4 (enExample) |
| JP (1) | JP6492068B2 (enExample) |
| CN (1) | CN105765718B (enExample) |
| WO (1) | WO2015050792A1 (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9224854B2 (en) | 2013-10-03 | 2015-12-29 | Texas Instruments Incorporated | Trench gate trench field plate vertical MOSFET |
| CN103500763B (zh) * | 2013-10-15 | 2017-03-15 | 苏州晶湛半导体有限公司 | Ⅲ族氮化物半导体器件及其制造方法 |
| US9627328B2 (en) * | 2014-10-09 | 2017-04-18 | Infineon Technologies Americas Corp. | Semiconductor structure having integrated snubber resistance |
| WO2016204794A1 (en) * | 2015-06-19 | 2016-12-22 | Intel Corporation | Vertical transistor using a through silicon via gate |
| DE102016112020B4 (de) * | 2016-06-30 | 2021-04-22 | Infineon Technologies Ag | Leistungshalbleitervorrichtung mit vollständig verarmten Kanalregionen |
| DE102016112017B4 (de) | 2016-06-30 | 2020-03-12 | Infineon Technologies Ag | Leistungshalbleitervorrichtung mit vollständig verarmten Kanalregionen und Verfahren zum Betreiben einer Leistungshalbleitervorrichtung |
| DE102016112016A1 (de) | 2016-06-30 | 2018-01-04 | Infineon Technologies Ag | Leistungshalbleiter mit vollständig verarmten Kanalregionen |
| DE102017130092B4 (de) | 2017-12-15 | 2025-08-14 | Infineon Technologies Dresden GmbH & Co. KG | IGBT mit vollständig verarmbaren n- und p-Kanalgebieten und Verfahren |
| US12057499B2 (en) * | 2018-09-25 | 2024-08-06 | Nxp Usa, Inc. | Transistor devices with termination regions |
| US11171206B2 (en) * | 2019-07-11 | 2021-11-09 | Micron Technology, Inc. | Channel conduction in semiconductor devices |
| TWI791871B (zh) | 2019-07-19 | 2023-02-11 | 力晶積成電子製造股份有限公司 | 通道全環繞半導體裝置及其製造方法 |
| TWI707438B (zh) | 2019-07-19 | 2020-10-11 | 力晶積成電子製造股份有限公司 | 電路架構 |
| CN112086517A (zh) * | 2020-10-29 | 2020-12-15 | 珠海迈巨微电子有限责任公司 | 一种槽栅功率半导体器件及其制备方法 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06104446A (ja) * | 1992-09-22 | 1994-04-15 | Toshiba Corp | 半導体装置 |
| US5365102A (en) * | 1993-07-06 | 1994-11-15 | North Carolina State University | Schottky barrier rectifier with MOS trench |
| GB9917099D0 (en) * | 1999-07-22 | 1999-09-22 | Koninkl Philips Electronics Nv | Cellular trench-gate field-effect transistors |
| US6593620B1 (en) * | 2000-10-06 | 2003-07-15 | General Semiconductor, Inc. | Trench DMOS transistor with embedded trench schottky rectifier |
| JP4570806B2 (ja) * | 2001-04-11 | 2010-10-27 | セイコーインスツル株式会社 | 半導体集積回路装置の製造方法 |
| US7786533B2 (en) * | 2001-09-07 | 2010-08-31 | Power Integrations, Inc. | High-voltage vertical transistor with edge termination structure |
| RU2230394C1 (ru) * | 2002-10-11 | 2004-06-10 | ОАО "ОКБ "Искра" | Биполярно-полевой транзистор с комбинированным затвором |
| GB0407012D0 (en) * | 2004-03-27 | 2004-04-28 | Koninkl Philips Electronics Nv | Trench insulated gate field effect transistor |
| DE102004057791B4 (de) * | 2004-11-30 | 2018-12-13 | Infineon Technologies Ag | Trenchtransistor sowie Verfahren zu dessen Herstellung |
| US7595523B2 (en) * | 2007-02-16 | 2009-09-29 | Power Integrations, Inc. | Gate pullback at ends of high-voltage vertical transistor structure |
| US8159025B2 (en) * | 2010-01-06 | 2012-04-17 | Ptek Technology Co., Ltd. | Gate electrode in a trench for power MOS transistors |
| US8519473B2 (en) * | 2010-07-14 | 2013-08-27 | Infineon Technologies Ag | Vertical transistor component |
| JP2012178389A (ja) * | 2011-02-25 | 2012-09-13 | Renesas Electronics Corp | 半導体装置 |
| US9356133B2 (en) * | 2012-02-01 | 2016-05-31 | Texas Instruments Incorporated | Medium voltage MOSFET device |
| US8796760B2 (en) * | 2012-03-14 | 2014-08-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Transistor and method of manufacturing the same |
| CN103681315B (zh) * | 2012-09-18 | 2016-08-10 | 中芯国际集成电路制造(上海)有限公司 | 埋层的形成方法 |
-
2013
- 2013-10-03 US US14/044,926 patent/US9123802B2/en active Active
-
2014
- 2014-09-26 EP EP14850299.0A patent/EP3053193A4/en not_active Withdrawn
- 2014-09-26 WO PCT/US2014/057804 patent/WO2015050792A1/en not_active Ceased
- 2014-09-26 JP JP2016520001A patent/JP6492068B2/ja active Active
- 2014-09-26 CN CN201480065238.0A patent/CN105765718B/zh active Active
-
2015
- 2015-07-23 US US14/807,276 patent/US9240446B2/en active Active
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