JP2016528730A5 - - Google Patents
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- Publication number
- JP2016528730A5 JP2016528730A5 JP2016527088A JP2016527088A JP2016528730A5 JP 2016528730 A5 JP2016528730 A5 JP 2016528730A5 JP 2016527088 A JP2016527088 A JP 2016527088A JP 2016527088 A JP2016527088 A JP 2016527088A JP 2016528730 A5 JP2016528730 A5 JP 2016528730A5
- Authority
- JP
- Japan
- Prior art keywords
- isolation structure
- deep trench
- epitaxial layer
- trench isolation
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002955 isolation Methods 0.000 claims 48
- 239000004065 semiconductor Substances 0.000 claims 26
- 238000000034 method Methods 0.000 claims 13
- 239000000463 material Substances 0.000 claims 12
- 239000002019 doping agent Substances 0.000 claims 9
- 238000009413 insulation Methods 0.000 claims 6
- 239000000758 substrate Substances 0.000 claims 5
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/944,864 | 2013-07-17 | ||
| US13/944,864 US9076863B2 (en) | 2013-07-17 | 2013-07-17 | Semiconductor structure with a doped region between two deep trench isolation structures |
| PCT/US2014/046955 WO2015009891A1 (en) | 2013-07-17 | 2014-07-17 | Method and semiconductor structure with deep trench isolation structures |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016528730A JP2016528730A (ja) | 2016-09-15 |
| JP2016528730A5 true JP2016528730A5 (enExample) | 2017-08-17 |
| JP6713708B2 JP6713708B2 (ja) | 2020-06-24 |
Family
ID=52342890
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016527088A Active JP6713708B2 (ja) | 2013-07-17 | 2014-07-17 | 深いトレンチ隔離構造を備えた半導体構造の方法及び半導体構造 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US9076863B2 (enExample) |
| EP (1) | EP3022770B1 (enExample) |
| JP (1) | JP6713708B2 (enExample) |
| CN (1) | CN105453265B (enExample) |
| WO (1) | WO2015009891A1 (enExample) |
Families Citing this family (24)
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| US7676228B2 (en) | 2005-09-19 | 2010-03-09 | Plant Equipment Inc. | Radio interoperability system and method |
| US9525060B2 (en) * | 2013-12-17 | 2016-12-20 | Texas Instruments Incorporated | Reduced area power devices using deep trench isolation |
| US9929140B2 (en) | 2014-05-22 | 2018-03-27 | Texas Instruments Incorporated | Isolation structure for IC with EPI regions sharing the same tank |
| US9543299B1 (en) * | 2015-09-22 | 2017-01-10 | Texas Instruments Incorporated | P-N bimodal conduction resurf LDMOS |
| EP3151283A1 (en) * | 2015-09-29 | 2017-04-05 | Nexperia B.V. | Vertical dmos bjt semiconductor device |
| CN106057656A (zh) * | 2016-06-06 | 2016-10-26 | 中航（重庆）微电子有限公司 | 一种功率半导体器件的制备方法 |
| CN107482003B (zh) * | 2016-06-08 | 2020-03-13 | 中芯国际集成电路制造(上海)有限公司 | 晶体管的版图结构、晶体管及其制造方法 |
| KR102140358B1 (ko) * | 2016-12-23 | 2020-08-03 | 매그나칩 반도체 유한회사 | 잡음 감소를 위한 분리 구조를 갖는 통합 반도체 소자 |
| US10510776B2 (en) * | 2018-03-29 | 2019-12-17 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor device with common active area and method for manufacturing the same |
| US10461182B1 (en) | 2018-06-28 | 2019-10-29 | Texas Instruments Incorporated | Drain centered LDMOS transistor with integrated dummy patterns |
| US11374124B2 (en) | 2018-06-28 | 2022-06-28 | Texas Instruments Incorporated | Protection of drain extended transistor field oxide |
| US11152505B2 (en) | 2018-06-28 | 2021-10-19 | Texas Instruments Incorporated | Drain extended transistor |
| CN109346466B (zh) * | 2018-08-17 | 2020-10-16 | 矽力杰半导体技术(杭州)有限公司 | 半导体结构和驱动芯片 |
| US20200194581A1 (en) * | 2018-12-18 | 2020-06-18 | Vanguard International Semiconductor Corporation | Semiconductor device and method for forming the same |
| WO2021102789A1 (en) * | 2019-11-28 | 2021-06-03 | Yangtze Memory Technologies Co., Ltd. | Local word line driver device, memory device, and fabrication method thereof |
| US11031303B1 (en) * | 2020-01-15 | 2021-06-08 | Taiwan Semiconductor Manufacturing Company Limited | Deep trench isolation structure and method of making the same |
| CN114068701B (zh) * | 2020-07-30 | 2024-03-19 | 中芯北方集成电路制造(北京)有限公司 | 半导体结构及其形成方法 |
| KR20220094866A (ko) * | 2020-12-29 | 2022-07-06 | 에스케이하이닉스 주식회사 | 이미지 센싱 장치 |
| US11855071B2 (en) * | 2021-04-28 | 2023-12-26 | Taiwan Semiconductor Manufacturing Company Limited | BCD device layout area defined by a deep trench isolation structure and methods for forming the same |
| KR102633398B1 (ko) * | 2021-05-27 | 2024-02-06 | 에스케이키파운드리 주식회사 | 반도체 소자를 위한 딥 트렌치 마스크 레이아웃 설계 방법 |
| US11830944B2 (en) * | 2021-07-20 | 2023-11-28 | Renesas Electronics Corporation | Semiconductor device and method of manufacturing the same |
| US12474421B2 (en) | 2021-08-13 | 2025-11-18 | Texas Instruments Incorporated | Hall effect sensor with reduced JFET effect |
| US11996441B2 (en) | 2021-12-10 | 2024-05-28 | Globalfoundries Singapore Pte. Ltd. | Semiconductor device for high voltage applications |
| CN114503264B (zh) * | 2022-01-04 | 2025-11-07 | 长江存储科技有限责任公司 | 半导体器件、存储器器件及其形成方法 |
Family Cites Families (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3246807B2 (ja) * | 1993-07-07 | 2002-01-15 | 株式会社東芝 | 半導体集積回路装置 |
| JP3257317B2 (ja) * | 1995-01-13 | 2002-02-18 | 富士電機株式会社 | 半導体装置の製造方法 |
| US6225181B1 (en) * | 1999-04-19 | 2001-05-01 | National Semiconductor Corp. | Trench isolated bipolar transistor structure integrated with CMOS technology |
| US6521493B1 (en) * | 2000-05-19 | 2003-02-18 | International Business Machines Corporation | Semiconductor device with STI sidewall implant |
| SE0103036D0 (sv) * | 2001-05-04 | 2001-09-13 | Ericsson Telefon Ab L M | Semiconductor process and integrated circuit |
| US6911694B2 (en) * | 2001-06-27 | 2005-06-28 | Ricoh Company, Ltd. | Semiconductor device and method for fabricating such device |
| TW548835B (en) * | 2001-08-30 | 2003-08-21 | Sony Corp | Semiconductor device and production method thereof |
| US8513087B2 (en) * | 2002-08-14 | 2013-08-20 | Advanced Analogic Technologies, Incorporated | Processes for forming isolation structures for integrated circuit devices |
| US6943426B2 (en) * | 2002-08-14 | 2005-09-13 | Advanced Analogic Technologies, Inc. | Complementary analog bipolar transistors with trench-constrained isolation diffusion |
| US7667268B2 (en) * | 2002-08-14 | 2010-02-23 | Advanced Analogic Technologies, Inc. | Isolated transistor |
| US7825488B2 (en) * | 2006-05-31 | 2010-11-02 | Advanced Analogic Technologies, Inc. | Isolation structures for integrated circuits and modular methods of forming the same |
| US8089129B2 (en) * | 2002-08-14 | 2012-01-03 | Advanced Analogic Technologies, Inc. | Isolated CMOS transistors |
| US20050179111A1 (en) * | 2004-02-12 | 2005-08-18 | Iwen Chao | Semiconductor device with low resistive path barrier |
| US20060076629A1 (en) * | 2004-10-07 | 2006-04-13 | Hamza Yilmaz | Semiconductor devices with isolation and sinker regions containing trenches filled with conductive material |
| EP1868239B1 (en) * | 2006-06-12 | 2020-04-22 | ams AG | Method of manufacturing trenches in a semiconductor body |
| US7411271B1 (en) * | 2007-01-19 | 2008-08-12 | Episil Technologies Inc. | Complementary metal-oxide-semiconductor field effect transistor |
| US7795681B2 (en) * | 2007-03-28 | 2010-09-14 | Advanced Analogic Technologies, Inc. | Isolated lateral MOSFET in epi-less substrate |
| KR101035596B1 (ko) * | 2007-12-28 | 2011-05-19 | 매그나칩 반도체 유한회사 | 딥 트렌치 구조를 갖는 반도체 소자 |
| US7671423B2 (en) * | 2008-01-10 | 2010-03-02 | International Business Machines Corporation | Resistor ballasted transistors |
| CN101266930B (zh) * | 2008-04-11 | 2010-06-23 | 北京大学 | 一种横向双扩散场效应晶体管的制备方法 |
| US8134204B2 (en) * | 2008-08-06 | 2012-03-13 | Texas Instruments Incorporated | DEMOS transistors with STI and compensated well in drain |
| US8159029B2 (en) * | 2008-10-22 | 2012-04-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | High voltage device having reduced on-state resistance |
| CN101510551B (zh) * | 2009-03-30 | 2010-06-09 | 电子科技大学 | 等离子平板显示器驱动芯片用高压器件 |
| US20100295126A1 (en) * | 2009-05-22 | 2010-11-25 | Broadcom Corporation | High dielectric constant gate oxides for a laterally diffused metal oxide semiconductor (LDMOS) |
| JP5729745B2 (ja) * | 2009-09-15 | 2015-06-03 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| CN102136494A (zh) * | 2010-01-21 | 2011-07-27 | 上海华虹Nec电子有限公司 | 高压隔离型ldnmos及其制造方法 |
| US20110260245A1 (en) * | 2010-04-23 | 2011-10-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Cost Effective Global Isolation and Power Dissipation For Power Integrated Circuit Device |
| US8378445B2 (en) * | 2010-08-31 | 2013-02-19 | Infineon Technologies Ag | Trench structures in direct contact |
| US20120094457A1 (en) * | 2010-10-14 | 2012-04-19 | Ann Gabrys | Sti-aligned ldmos drift implant to enhance manufacturability while optimizing rdson and safe operating area |
| JP5898473B2 (ja) * | 2011-11-28 | 2016-04-06 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| US8541862B2 (en) * | 2011-11-30 | 2013-09-24 | Freescale Semiconductor, Inc. | Semiconductor device with self-biased isolation |
| US9236472B2 (en) * | 2012-04-17 | 2016-01-12 | Freescale Semiconductor, Inc. | Semiconductor device with integrated breakdown protection |
| US8921173B2 (en) * | 2012-05-30 | 2014-12-30 | Tower Semiconductor Ltd. | Deep silicon via as a drain sinker in integrated vertical DMOS transistor |
| US9231083B2 (en) * | 2012-06-29 | 2016-01-05 | Freescal Semiconductor Inc. | High breakdown voltage LDMOS device |
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2013
- 2013-07-17 US US13/944,864 patent/US9076863B2/en active Active
-
2014
- 2014-07-17 CN CN201480040611.7A patent/CN105453265B/zh active Active
- 2014-07-17 JP JP2016527088A patent/JP6713708B2/ja active Active
- 2014-07-17 WO PCT/US2014/046955 patent/WO2015009891A1/en not_active Ceased
- 2014-07-17 EP EP14825887.4A patent/EP3022770B1/en active Active
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2015
- 2015-06-04 US US14/730,748 patent/US9608105B2/en active Active