JP2016517625A5 - - Google Patents

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JP2016517625A5
JP2016517625A5 JP2015561629A JP2015561629A JP2016517625A5 JP 2016517625 A5 JP2016517625 A5 JP 2016517625A5 JP 2015561629 A JP2015561629 A JP 2015561629A JP 2015561629 A JP2015561629 A JP 2015561629A JP 2016517625 A5 JP2016517625 A5 JP 2016517625A5
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semiconductor wafer
type
nanowire
doped regions
oxidatively
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JP2015561629A
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JP6306063B2 (ja
JP2016517625A (ja
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Priority claimed from US13/788,224 external-priority patent/US9177890B2/en
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JP2015561629A 2013-03-07 2014-03-05 半導体集積回路のモノリシック３次元集積化 Expired - Fee Related JP6306063B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/788,224 2013-03-07
US13/788,224 US9177890B2 (en) 2013-03-07 2013-03-07 Monolithic three dimensional integration of semiconductor integrated circuits
PCT/US2014/020941 WO2014138317A1 (en) 2013-03-07 2014-03-05 Monolithic three dimensional integration of semiconductor integrated circuits

Publications (3)

Publication Number Publication Date
JP2016517625A JP2016517625A (ja) 2016-06-16
JP2016517625A5 true JP2016517625A5 (enExample) 2017-03-09
JP6306063B2 JP6306063B2 (ja) 2018-04-04

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JP2015561629A Expired - Fee Related JP6306063B2 (ja) 2013-03-07 2014-03-05 半導体集積回路のモノリシック３次元集積化

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US (1) US9177890B2 (enExample)
EP (1) EP2965359A1 (enExample)
JP (1) JP6306063B2 (enExample)
KR (1) KR20150130350A (enExample)
CN (1) CN105027284B (enExample)
TW (1) TWI543336B (enExample)
WO (1) WO2014138317A1 (enExample)

Families Citing this family (226)

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