FR2978605B1 - Procede de fabrication d'une structure semi-conductrice comprenant une couche fonctionnalisee sur un substrat support - Google Patents

Procede de fabrication d'une structure semi-conductrice comprenant une couche fonctionnalisee sur un substrat support

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Publication number
FR2978605B1
FR2978605B1 FR1156910A FR1156910A FR2978605B1 FR 2978605 B1 FR2978605 B1 FR 2978605B1 FR 1156910 A FR1156910 A FR 1156910A FR 1156910 A FR1156910 A FR 1156910A FR 2978605 B1 FR2978605 B1 FR 2978605B1
Authority
FR
France
Prior art keywords
manufacturing
support substrate
semiconductor structure
functionalized layer
functionalized
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1156910A
Other languages
English (en)
Other versions
FR2978605A1 (fr
Inventor
Ionut Radu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR1156910A priority Critical patent/FR2978605B1/fr
Priority to KR20120081307A priority patent/KR101369007B1/ko
Priority to US13/557,959 priority patent/US9087767B2/en
Priority to CN201210262813.9A priority patent/CN102903610B/zh
Publication of FR2978605A1 publication Critical patent/FR2978605A1/fr
Application granted granted Critical
Publication of FR2978605B1 publication Critical patent/FR2978605B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8221—Three dimensional integrated circuits stacked in different levels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
FR1156910A 2011-07-28 2011-07-28 Procede de fabrication d'une structure semi-conductrice comprenant une couche fonctionnalisee sur un substrat support Active FR2978605B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR1156910A FR2978605B1 (fr) 2011-07-28 2011-07-28 Procede de fabrication d'une structure semi-conductrice comprenant une couche fonctionnalisee sur un substrat support
KR20120081307A KR101369007B1 (ko) 2011-07-28 2012-07-25 지지기판에 기능화 층을 구비하는 반도체 구조물을 제조하기 위한 프로세스
US13/557,959 US9087767B2 (en) 2011-07-28 2012-07-25 Process for manufacturing a semiconductor structure comprising a functionalized layer on a support substrate
CN201210262813.9A CN102903610B (zh) 2011-07-28 2012-07-26 制造包括位于支撑衬底上的功能化层的半导体结构的工艺

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1156910A FR2978605B1 (fr) 2011-07-28 2011-07-28 Procede de fabrication d'une structure semi-conductrice comprenant une couche fonctionnalisee sur un substrat support

Publications (2)

Publication Number Publication Date
FR2978605A1 FR2978605A1 (fr) 2013-02-01
FR2978605B1 true FR2978605B1 (fr) 2015-10-16

Family

ID=45001913

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1156910A Active FR2978605B1 (fr) 2011-07-28 2011-07-28 Procede de fabrication d'une structure semi-conductrice comprenant une couche fonctionnalisee sur un substrat support

Country Status (4)

Country Link
US (1) US9087767B2 (fr)
KR (1) KR101369007B1 (fr)
CN (1) CN102903610B (fr)
FR (1) FR2978605B1 (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9098666B2 (en) 2012-11-28 2015-08-04 Qualcomm Incorporated Clock distribution network for 3D integrated circuit
US9064077B2 (en) 2012-11-28 2015-06-23 Qualcomm Incorporated 3D floorplanning using 2D and 3D blocks
US9536840B2 (en) 2013-02-12 2017-01-03 Qualcomm Incorporated Three-dimensional (3-D) integrated circuits (3DICS) with graphene shield, and related components and methods
US20140225218A1 (en) * 2013-02-12 2014-08-14 Qualcomm Incorporated Ion reduced, ion cut-formed three-dimensional (3d) integrated circuits (ic) (3dics), and related methods and systems
US9041448B2 (en) 2013-03-05 2015-05-26 Qualcomm Incorporated Flip-flops in a monolithic three-dimensional (3D) integrated circuit (IC) (3DIC) and related methods
US9177890B2 (en) 2013-03-07 2015-11-03 Qualcomm Incorporated Monolithic three dimensional integration of semiconductor integrated circuits
US9171608B2 (en) 2013-03-15 2015-10-27 Qualcomm Incorporated Three-dimensional (3D) memory cell separation among 3D integrated circuit (IC) tiers, and related 3D integrated circuits (3DICS), 3DIC processor cores, and methods
FR3063834B1 (fr) * 2017-03-10 2021-04-30 Soitec Silicon On Insulator Procede de fabrication d'un dispositif semi-conducteur tridimensionnel
FR3116940B1 (fr) * 2020-11-27 2023-06-09 Commissariat Energie Atomique Procédé basse température de fabrication d’un substrat semiconducteur sur isolant
CN116216630B (zh) * 2023-04-28 2023-07-21 润芯感知科技(南昌)有限公司 一种半导体器件及其制造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6103599A (en) * 1997-07-25 2000-08-15 Silicon Genesis Corporation Planarizing technique for multilayered substrates
FR2773261B1 (fr) * 1997-12-30 2000-01-28 Commissariat Energie Atomique Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions
FR2842349B1 (fr) 2002-07-09 2005-02-18 Transfert d'une couche mince a partir d'une plaquette comprenant une couche tampon
JP4794810B2 (ja) * 2003-03-20 2011-10-19 シャープ株式会社 半導体装置の製造方法
WO2005069356A1 (fr) 2004-01-15 2005-07-28 Japan Science And Technology Agency Procede de production d'un film mince monocristallin et dispositif a film mince monocristallin
TWI283442B (en) * 2004-09-09 2007-07-01 Sez Ag Method for selective etching
EP1894234B1 (fr) * 2005-02-28 2021-11-03 Silicon Genesis Corporation Procédé de rigidification du substrat et système pour un transfert de couche.
JP2006297502A (ja) 2005-04-15 2006-11-02 Toshiba Corp 半導体装置及びその製造方法
US8241995B2 (en) * 2006-09-18 2012-08-14 International Business Machines Corporation Bonding of substrates including metal-dielectric patterns with metal raised above dielectric
JP5415676B2 (ja) * 2007-05-30 2014-02-12 信越化学工業株式会社 Ｓｏｉウェーハの製造方法
SG171714A1 (en) * 2008-12-19 2011-07-28 Soitec Silicon On Insulator Strain engineered composite semiconductor substrates and methods of forming same
US8058137B1 (en) * 2009-04-14 2011-11-15 Monolithic 3D Inc. Method for fabrication of a semiconductor device and structure
US8557679B2 (en) * 2010-06-30 2013-10-15 Corning Incorporated Oxygen plasma conversion process for preparing a surface for bonding
US8461017B2 (en) 2010-07-19 2013-06-11 Soitec Methods of forming bonded semiconductor structures using a temporary carrier having a weakened ion implant region for subsequent separation along the weakened region
SG177817A1 (en) 2010-07-19 2012-02-28 Soitec Silicon On Insulator Temporary semiconductor structure bonding methods and related bonded semiconductor structures
US9000557B2 (en) * 2012-03-17 2015-04-07 Zvi Or-Bach Semiconductor device and structure

Also Published As

Publication number Publication date
US9087767B2 (en) 2015-07-21
KR20130014380A (ko) 2013-02-07
FR2978605A1 (fr) 2013-02-01
CN102903610A (zh) 2013-01-30
KR101369007B1 (ko) 2014-02-27
CN102903610B (zh) 2015-12-02
US20130026608A1 (en) 2013-01-31

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