JP2013093579A5 - - Google Patents

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Publication number
JP2013093579A5
JP2013093579A5 JP2012234265A JP2012234265A JP2013093579A5 JP 2013093579 A5 JP2013093579 A5 JP 2013093579A5 JP 2012234265 A JP2012234265 A JP 2012234265A JP 2012234265 A JP2012234265 A JP 2012234265A JP 2013093579 A5 JP2013093579 A5 JP 2013093579A5
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JP
Japan
Prior art keywords
substrate
doped region
depth
concentration
conductivity type
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JP2012234265A
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English (en)
Japanese (ja)
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JP6222800B2 (ja
JP2013093579A (ja
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Publication date
Priority claimed from US13/279,776 external-priority patent/US8518764B2/en
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Publication of JP2013093579A publication Critical patent/JP2013093579A/ja
Publication of JP2013093579A5 publication Critical patent/JP2013093579A5/ja
Application granted granted Critical
Publication of JP6222800B2 publication Critical patent/JP6222800B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2012234265A 2011-10-24 2012-10-24 基板貫通バイアを有する半導体構造および製造方法 Expired - Fee Related JP6222800B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/279,776 2011-10-24
US13/279,776 US8518764B2 (en) 2011-10-24 2011-10-24 Semiconductor structure having a through substrate via (TSV) and method for forming

Publications (3)

Publication Number Publication Date
JP2013093579A JP2013093579A (ja) 2013-05-16
JP2013093579A5 true JP2013093579A5 (enExample) 2015-11-26
JP6222800B2 JP6222800B2 (ja) 2017-11-01

Family

ID=48108619

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012234265A Expired - Fee Related JP6222800B2 (ja) 2011-10-24 2012-10-24 基板貫通バイアを有する半導体構造および製造方法

Country Status (3)

Country Link
US (1) US8518764B2 (enExample)
JP (1) JP6222800B2 (enExample)
CN (1) CN103066059B (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9275933B2 (en) * 2012-06-19 2016-03-01 United Microelectronics Corp. Semiconductor device
US9196671B2 (en) * 2012-11-02 2015-11-24 International Business Machines Corporation Integrated decoupling capacitor utilizing through-silicon via
KR101968351B1 (ko) * 2013-01-28 2019-08-13 서울대학교산학협력단 반도체 장치 및 그 제조 방법
US8927427B2 (en) * 2013-04-29 2015-01-06 International Business Machines Corporation Anticipatory implant for TSV
JP6219140B2 (ja) * 2013-11-22 2017-10-25 ルネサスエレクトロニクス株式会社 半導体装置
US9373613B2 (en) * 2013-12-31 2016-06-21 Skyworks Solutions, Inc. Amplifier voltage limiting using punch-through effect
JP6305067B2 (ja) 2014-01-09 2018-04-04 株式会社東芝 半導体装置の製造方法
WO2015136821A1 (ja) 2014-03-12 2015-09-17 学校法人慶應義塾 積層半導体集積回路装置
CN104392993A (zh) * 2014-12-08 2015-03-04 江苏博普电子科技有限责任公司 一种基于高阻硅衬底的ldmos mmic芯片
US10242932B2 (en) 2016-06-24 2019-03-26 Infineon Technologies Ag LDMOS transistor and method
US9875933B2 (en) 2016-06-24 2018-01-23 Infineon Technologies Ag Substrate and method including forming a via comprising a conductive liner layer and conductive plug having different microstructures
US9960229B2 (en) 2016-06-24 2018-05-01 Infineon Technologies Ag Semiconductor device including a LDMOS transistor
US10622284B2 (en) 2016-06-24 2020-04-14 Infineon Technologies Ag LDMOS transistor and method
US10050139B2 (en) 2016-06-24 2018-08-14 Infineon Technologies Ag Semiconductor device including a LDMOS transistor and method
WO2018004662A1 (en) * 2016-07-01 2018-01-04 Intel Corporation Methods and apparatus to prevent through-silicon-via shorting
US10020270B2 (en) * 2016-09-29 2018-07-10 Infineon Technologies Ag Semiconductor device including a LDMOS transistor, monolithic microwave integrated circuit and method
JP7341927B2 (ja) 2020-03-12 2023-09-11 キオクシア株式会社 半導体記憶装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4070485B2 (ja) * 2001-05-09 2008-04-02 株式会社東芝 半導体装置
JP2002343968A (ja) * 2001-05-14 2002-11-29 Toshiba Corp 半導体装置、半導体装置の製造方法
US6521923B1 (en) * 2002-05-25 2003-02-18 Sirenza Microdevices, Inc. Microwave field effect transistor structure on silicon carbide substrate
US7667268B2 (en) * 2002-08-14 2010-02-23 Advanced Analogic Technologies, Inc. Isolated transistor
US6949445B2 (en) 2003-03-12 2005-09-27 Micron Technology, Inc. Method of forming angled implant for trench isolation
US7102184B2 (en) 2003-06-16 2006-09-05 Micron Technology, Inc. Image device and photodiode structure
US7087959B2 (en) * 2004-08-18 2006-08-08 Agere Systems Inc. Metal-oxide-semiconductor device having an enhanced shielding structure
US7670896B2 (en) * 2006-11-16 2010-03-02 International Business Machines Corporation Method and structure for reducing floating body effects in MOSFET devices
US7843064B2 (en) 2007-12-21 2010-11-30 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and process for the formation of TSVs
JP2009170747A (ja) * 2008-01-18 2009-07-30 Toshiba Corp 半導体装置及びその製造方法
US7960781B2 (en) * 2008-09-08 2011-06-14 Semiconductor Components Industries, Llc Semiconductor device having vertical charge-compensated structure and sub-surface connecting layer and method
US7884016B2 (en) 2009-02-12 2011-02-08 Asm International, N.V. Liner materials and related processes for 3-D integration
JP2011009595A (ja) * 2009-06-29 2011-01-13 Renesas Electronics Corp 半導体装置および半導体装置の製造方法
CN102148251B (zh) * 2011-01-10 2013-01-30 电子科技大学 Soi横向mosfet器件和集成电路

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