CN103066059B - 具有穿过衬底通路(tsv)的半导体结构及其形成方法 - Google Patents

具有穿过衬底通路(tsv)的半导体结构及其形成方法 Download PDF

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CN103066059B
CN103066059B CN201210407786.XA CN201210407786A CN103066059B CN 103066059 B CN103066059 B CN 103066059B CN 201210407786 A CN201210407786 A CN 201210407786A CN 103066059 B CN103066059 B CN 103066059B
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doped region
substrate
tsv
depth
concentration
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CN103066059A (zh
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T·B·涛
J·E·卡亚斯
H·A·鲁尔达
P·W·桑德斯
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NXP USA Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/20—Inductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0221—Manufacture or treatment of FETs having insulated gates [IGFET] having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended-drain MOSFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/254—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes extend entirely through the semiconductor bodies, e.g. via-holes for back side contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5227—Inductive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN201210407786.XA 2011-10-24 2012-10-24 具有穿过衬底通路(tsv)的半导体结构及其形成方法 Active CN103066059B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/279,776 2011-10-24
US13/279,776 US8518764B2 (en) 2011-10-24 2011-10-24 Semiconductor structure having a through substrate via (TSV) and method for forming

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CN103066059A CN103066059A (zh) 2013-04-24
CN103066059B true CN103066059B (zh) 2018-05-22

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US (1) US8518764B2 (enExample)
JP (1) JP6222800B2 (enExample)
CN (1) CN103066059B (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9275933B2 (en) 2012-06-19 2016-03-01 United Microelectronics Corp. Semiconductor device
US9196671B2 (en) * 2012-11-02 2015-11-24 International Business Machines Corporation Integrated decoupling capacitor utilizing through-silicon via
KR101968351B1 (ko) * 2013-01-28 2019-08-13 서울대학교산학협력단 반도체 장치 및 그 제조 방법
US8927427B2 (en) * 2013-04-29 2015-01-06 International Business Machines Corporation Anticipatory implant for TSV
JP6219140B2 (ja) * 2013-11-22 2017-10-25 ルネサスエレクトロニクス株式会社 半導体装置
US9373613B2 (en) * 2013-12-31 2016-06-21 Skyworks Solutions, Inc. Amplifier voltage limiting using punch-through effect
JP6305067B2 (ja) 2014-01-09 2018-04-04 株式会社東芝 半導体装置の製造方法
EP3118892B1 (en) * 2014-03-12 2018-05-02 Thruchip Japan Inc. Laminated semiconductor integrated circuit device
CN104392993A (zh) * 2014-12-08 2015-03-04 江苏博普电子科技有限责任公司 一种基于高阻硅衬底的ldmos mmic芯片
US9875933B2 (en) 2016-06-24 2018-01-23 Infineon Technologies Ag Substrate and method including forming a via comprising a conductive liner layer and conductive plug having different microstructures
US10242932B2 (en) 2016-06-24 2019-03-26 Infineon Technologies Ag LDMOS transistor and method
US10050139B2 (en) 2016-06-24 2018-08-14 Infineon Technologies Ag Semiconductor device including a LDMOS transistor and method
US10622284B2 (en) 2016-06-24 2020-04-14 Infineon Technologies Ag LDMOS transistor and method
US9960229B2 (en) 2016-06-24 2018-05-01 Infineon Technologies Ag Semiconductor device including a LDMOS transistor
WO2018004662A1 (en) * 2016-07-01 2018-01-04 Intel Corporation Methods and apparatus to prevent through-silicon-via shorting
US10020270B2 (en) 2016-09-29 2018-07-10 Infineon Technologies Ag Semiconductor device including a LDMOS transistor, monolithic microwave integrated circuit and method
JP7341927B2 (ja) * 2020-03-12 2023-09-11 キオクシア株式会社 半導体記憶装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101183683A (zh) * 2006-11-16 2008-05-21 国际商业机器公司 用于减小mosfet器件中的浮体效应的方法和结构
CN102037562A (zh) * 2008-02-27 2011-04-27 先进模拟科技公司 隔离的晶体管和二极管、用于半导体管芯的隔离和终端结构
CN102148251A (zh) * 2011-01-10 2011-08-10 电子科技大学 Soi横向mosfet器件和集成电路

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4070485B2 (ja) * 2001-05-09 2008-04-02 株式会社東芝 半導体装置
JP2002343968A (ja) * 2001-05-14 2002-11-29 Toshiba Corp 半導体装置、半導体装置の製造方法
US6521923B1 (en) * 2002-05-25 2003-02-18 Sirenza Microdevices, Inc. Microwave field effect transistor structure on silicon carbide substrate
US6949445B2 (en) 2003-03-12 2005-09-27 Micron Technology, Inc. Method of forming angled implant for trench isolation
US7102184B2 (en) 2003-06-16 2006-09-05 Micron Technology, Inc. Image device and photodiode structure
US7087959B2 (en) * 2004-08-18 2006-08-08 Agere Systems Inc. Metal-oxide-semiconductor device having an enhanced shielding structure
US7843064B2 (en) 2007-12-21 2010-11-30 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and process for the formation of TSVs
JP2009170747A (ja) * 2008-01-18 2009-07-30 Toshiba Corp 半導体装置及びその製造方法
US7960781B2 (en) * 2008-09-08 2011-06-14 Semiconductor Components Industries, Llc Semiconductor device having vertical charge-compensated structure and sub-surface connecting layer and method
US7884016B2 (en) 2009-02-12 2011-02-08 Asm International, N.V. Liner materials and related processes for 3-D integration
JP2011009595A (ja) * 2009-06-29 2011-01-13 Renesas Electronics Corp 半導体装置および半導体装置の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101183683A (zh) * 2006-11-16 2008-05-21 国际商业机器公司 用于减小mosfet器件中的浮体效应的方法和结构
CN102037562A (zh) * 2008-02-27 2011-04-27 先进模拟科技公司 隔离的晶体管和二极管、用于半导体管芯的隔离和终端结构
CN102148251A (zh) * 2011-01-10 2011-08-10 电子科技大学 Soi横向mosfet器件和集成电路

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JP6222800B2 (ja) 2017-11-01
JP2013093579A (ja) 2013-05-16
US20130099312A1 (en) 2013-04-25
US8518764B2 (en) 2013-08-27

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