CN101183683A - 用于减小mosfet器件中的浮体效应的方法和结构 - Google Patents
用于减小mosfet器件中的浮体效应的方法和结构 Download PDFInfo
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- CN101183683A CN101183683A CNA2007101613953A CN200710161395A CN101183683A CN 101183683 A CN101183683 A CN 101183683A CN A2007101613953 A CNA2007101613953 A CN A2007101613953A CN 200710161395 A CN200710161395 A CN 200710161395A CN 101183683 A CN101183683 A CN 101183683A
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
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- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
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- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/560,412 | 2006-11-16 | ||
US11/560,412 US7670896B2 (en) | 2006-11-16 | 2006-11-16 | Method and structure for reducing floating body effects in MOSFET devices |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101183683A true CN101183683A (zh) | 2008-05-21 |
CN101183683B CN101183683B (zh) | 2010-06-16 |
Family
ID=39416083
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2007101613953A Expired - Fee Related CN101183683B (zh) | 2006-11-16 | 2007-09-30 | 用于减小mosfet器件中的浮体效应的方法和结构 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7670896B2 (zh) |
JP (1) | JP5285260B2 (zh) |
CN (1) | CN101183683B (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101593698B (zh) * | 2008-05-28 | 2012-12-26 | 海力士半导体有限公司 | 制造半导体器件的方法 |
CN103066059A (zh) * | 2011-10-24 | 2013-04-24 | 飞思卡尔半导体公司 | 具有穿过衬底通路(tsv)的半导体结构及其形成方法 |
CN106098562A (zh) * | 2016-08-03 | 2016-11-09 | 上海华虹宏力半导体制造有限公司 | 半导体结构及其形成方法 |
CN106229290A (zh) * | 2016-07-27 | 2016-12-14 | 上海华虹宏力半导体制造有限公司 | Soi器件结构及其制造方法 |
WO2024040698A1 (zh) * | 2022-08-25 | 2024-02-29 | 长鑫存储技术有限公司 | 一种半导体结构的制作方法及其结构 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7745886B2 (en) * | 2007-12-10 | 2010-06-29 | Newport Fab, Llc | Semiconductor on insulator (SOI) switching circuit |
CN102315271B (zh) * | 2010-07-07 | 2013-04-24 | 中国科学院微电子研究所 | 半导体器件及其制作方法 |
US8409989B2 (en) | 2010-11-11 | 2013-04-02 | International Business Machines Corporation | Structure and method to fabricate a body contact |
KR101801077B1 (ko) | 2012-01-10 | 2017-11-27 | 삼성전자주식회사 | 매립 배선을 갖는 반도체 소자 형성 방법 및 관련된 소자 |
US10084063B2 (en) * | 2014-06-23 | 2018-09-25 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor device and manufacturing method thereof |
US11610843B2 (en) * | 2021-03-08 | 2023-03-21 | Globalfoundries U.S. Inc. | Well tap for an integrated circuit product and methods of forming such a well tap |
JP7464554B2 (ja) | 2021-03-12 | 2024-04-09 | 株式会社東芝 | 高周波トランジスタ |
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NL8800847A (nl) * | 1988-04-05 | 1989-11-01 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting met een soi-struktuur. |
JPH02290059A (ja) * | 1989-02-16 | 1990-11-29 | Mitsubishi Electric Corp | 半導体集積回路装置 |
JPH0783127B2 (ja) * | 1989-04-20 | 1995-09-06 | 三菱電機株式会社 | 半導体装置 |
US5160989A (en) | 1989-06-13 | 1992-11-03 | Texas Instruments Incorporated | Extended body contact for semiconductor over insulator transistor |
JPH04150038A (ja) * | 1990-10-15 | 1992-05-22 | Seiko Epson Corp | 半導体装置 |
US5245208A (en) * | 1991-04-22 | 1993-09-14 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and manufacturing method thereof |
JPH07302908A (ja) * | 1994-05-02 | 1995-11-14 | Fujitsu Ltd | 半導体装置及びその製造方法 |
US5405795A (en) | 1994-06-29 | 1995-04-11 | International Business Machines Corporation | Method of forming a SOI transistor having a self-aligned body contact |
JPH08111529A (ja) * | 1994-10-11 | 1996-04-30 | Sony Corp | 電界効果型半導体装置 |
JP2702427B2 (ja) * | 1994-12-26 | 1998-01-21 | 日本電気アイシーマイコンシステム株式会社 | 半導体集積回路装置およびその製造方法 |
KR0179898B1 (ko) | 1996-02-28 | 1999-04-15 | 문정환 | 반도체소자의 바디-콘택 구조 |
US5882981A (en) * | 1996-07-30 | 1999-03-16 | Texas Instruments Incorporated | Mesa isolation Refill Process for Silicon on Insulator Technology Using Flowage Oxides as the Refill Material |
JP2959514B2 (ja) * | 1997-03-26 | 1999-10-06 | 日本電気株式会社 | 半導体装置及び半導体装置の製造方法 |
JP2870635B2 (ja) | 1997-04-17 | 1999-03-17 | 日本電気株式会社 | 半導体装置 |
US5935766A (en) * | 1997-08-07 | 1999-08-10 | Advanced Micro Devices, Inc. | Method of forming a conductive plug in an interlevel dielectric |
US5963817A (en) * | 1997-10-16 | 1999-10-05 | International Business Machines Corporation | Bulk and strained silicon on insulator using local selective oxidation |
US6387739B1 (en) | 1998-08-07 | 2002-05-14 | International Business Machines Corporation | Method and improved SOI body contact structure for transistors |
JP3381646B2 (ja) * | 1998-11-19 | 2003-03-04 | 日本電気株式会社 | 半導体装置およびその製造方法 |
US5965917A (en) * | 1999-01-04 | 1999-10-12 | Advanced Micro Devices, Inc. | Structure and method of formation of body contacts in SOI MOSFETS to elimate floating body effects |
US6441434B1 (en) | 2000-03-31 | 2002-08-27 | Advanced Micro Devices, Inc. | Semiconductor-on-insulator body-source contact and method |
JP2002064206A (ja) * | 2000-06-09 | 2002-02-28 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2002184975A (ja) * | 2000-12-14 | 2002-06-28 | Toshiba Corp | パワーmosfet及びその製造方法 |
US6441435B1 (en) * | 2001-01-31 | 2002-08-27 | Advanced Micro Devices, Inc. | SOI device with wrap-around contact to underside of body, and method of making |
US6620656B2 (en) | 2001-12-19 | 2003-09-16 | Motorola, Inc. | Method of forming body-tied silicon on insulator semiconductor device |
FR2838237B1 (fr) * | 2002-04-03 | 2005-02-25 | St Microelectronics Sa | Procede de fabrication d'un transistor a effet de champ a grille isolee a canal contraint et circuit integre comprenant un tel transistor |
US6784076B2 (en) * | 2002-04-08 | 2004-08-31 | Micron Technology, Inc. | Process for making a silicon-on-insulator ledge by implanting ions from silicon source |
EP1650796A3 (fr) * | 2004-10-20 | 2010-12-08 | STMicroelectronics (Crolles 2) SAS | Procédé de prise de contact sur une région d'un circuit intégré, en particulier sur les électrodes d'un transistor |
-
2006
- 2006-11-16 US US11/560,412 patent/US7670896B2/en not_active Expired - Fee Related
-
2007
- 2007-09-30 CN CN2007101613953A patent/CN101183683B/zh not_active Expired - Fee Related
- 2007-10-25 JP JP2007278110A patent/JP5285260B2/ja not_active Expired - Fee Related
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101593698B (zh) * | 2008-05-28 | 2012-12-26 | 海力士半导体有限公司 | 制造半导体器件的方法 |
CN103066059A (zh) * | 2011-10-24 | 2013-04-24 | 飞思卡尔半导体公司 | 具有穿过衬底通路(tsv)的半导体结构及其形成方法 |
CN103066059B (zh) * | 2011-10-24 | 2018-05-22 | 恩智浦美国有限公司 | 具有穿过衬底通路(tsv)的半导体结构及其形成方法 |
CN106229290A (zh) * | 2016-07-27 | 2016-12-14 | 上海华虹宏力半导体制造有限公司 | Soi器件结构及其制造方法 |
CN106229290B (zh) * | 2016-07-27 | 2019-03-26 | 上海华虹宏力半导体制造有限公司 | Soi器件结构及其制造方法 |
CN106098562A (zh) * | 2016-08-03 | 2016-11-09 | 上海华虹宏力半导体制造有限公司 | 半导体结构及其形成方法 |
WO2024040698A1 (zh) * | 2022-08-25 | 2024-02-29 | 长鑫存储技术有限公司 | 一种半导体结构的制作方法及其结构 |
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JP5285260B2 (ja) | 2013-09-11 |
CN101183683B (zh) | 2010-06-16 |
US20080116514A1 (en) | 2008-05-22 |
JP2008131038A (ja) | 2008-06-05 |
US7670896B2 (en) | 2010-03-02 |
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