FR2838237B1 - Procede de fabrication d'un transistor a effet de champ a grille isolee a canal contraint et circuit integre comprenant un tel transistor - Google Patents
Procede de fabrication d'un transistor a effet de champ a grille isolee a canal contraint et circuit integre comprenant un tel transistorInfo
- Publication number
- FR2838237B1 FR2838237B1 FR0204165A FR0204165A FR2838237B1 FR 2838237 B1 FR2838237 B1 FR 2838237B1 FR 0204165 A FR0204165 A FR 0204165A FR 0204165 A FR0204165 A FR 0204165A FR 2838237 B1 FR2838237 B1 FR 2838237B1
- Authority
- FR
- France
- Prior art keywords
- transistor
- manufacturing
- integrated circuit
- field effect
- effect transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005669 field effect Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66651—Lateral single gate silicon transistors with a single crystalline channel formed on the silicon substrate after insulating device isolation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41775—Source or drain electrodes for field effect devices characterised by the proximity or the relative position of the source or drain electrode and the gate electrode, e.g. the source or drain electrode separated from the gate electrode by side-walls or spreading around or above the gate electrode
- H01L29/41783—Raised source or drain electrodes self aligned with the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/66772—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78639—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a drain or source connected to a bulk conducting substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78684—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys
- H01L29/78687—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys with a multilayer structure or superlattice structure
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Thin Film Transistor (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0204165A FR2838237B1 (fr) | 2002-04-03 | 2002-04-03 | Procede de fabrication d'un transistor a effet de champ a grille isolee a canal contraint et circuit integre comprenant un tel transistor |
US10/405,075 US6989570B2 (en) | 2002-04-03 | 2003-03-31 | Strained-channel isolated-gate field effect transistor, process for making same and resulting integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0204165A FR2838237B1 (fr) | 2002-04-03 | 2002-04-03 | Procede de fabrication d'un transistor a effet de champ a grille isolee a canal contraint et circuit integre comprenant un tel transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2838237A1 FR2838237A1 (fr) | 2003-10-10 |
FR2838237B1 true FR2838237B1 (fr) | 2005-02-25 |
Family
ID=28052089
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0204165A Expired - Fee Related FR2838237B1 (fr) | 2002-04-03 | 2002-04-03 | Procede de fabrication d'un transistor a effet de champ a grille isolee a canal contraint et circuit integre comprenant un tel transistor |
Country Status (2)
Country | Link |
---|---|
US (1) | US6989570B2 (fr) |
FR (1) | FR2838237B1 (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7700951B2 (en) | 2003-11-05 | 2010-04-20 | International Business Machines Corporation | Method and structure for forming strained Si for CMOS devices |
Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7074623B2 (en) * | 2002-06-07 | 2006-07-11 | Amberwave Systems Corporation | Methods of forming strained-semiconductor-on-insulator finFET device structures |
US7019326B2 (en) * | 2003-11-14 | 2006-03-28 | Intel Corporation | Transistor with strain-inducing structure in channel |
KR100521383B1 (ko) * | 2003-11-17 | 2005-10-12 | 삼성전자주식회사 | 소자분리막 상에 형성된 소오스/드레인을 갖는 반도체소자 및 그 제조방법 |
KR100584776B1 (ko) * | 2004-03-05 | 2006-05-29 | 삼성전자주식회사 | 반도체 장치의 액티브 구조물 형성 방법, 소자 분리 방법및 트랜지스터 형성 방법 |
US6881635B1 (en) * | 2004-03-23 | 2005-04-19 | International Business Machines Corporation | Strained silicon NMOS devices with embedded source/drain |
FR2872626B1 (fr) * | 2004-07-05 | 2008-05-02 | Commissariat Energie Atomique | Procede pour contraindre un motif mince |
US20060030093A1 (en) * | 2004-08-06 | 2006-02-09 | Da Zhang | Strained semiconductor devices and method for forming at least a portion thereof |
EP1638149B1 (fr) * | 2004-09-15 | 2011-11-23 | STMicroelectronics (Crolles 2) SAS | Procédé de fabrication d'un transistor à effet de champ à grille isolée à canal à hétérostructure |
US7358571B2 (en) * | 2004-10-20 | 2008-04-15 | Taiwan Semiconductor Manufacturing Company | Isolation spacer for thin SOI devices |
US7306997B2 (en) * | 2004-11-10 | 2007-12-11 | Advanced Micro Devices, Inc. | Strained fully depleted silicon on insulator semiconductor device and manufacturing method therefor |
KR100669556B1 (ko) * | 2004-12-08 | 2007-01-15 | 주식회사 하이닉스반도체 | 반도체 소자 및 그 제조 방법 |
KR100640616B1 (ko) * | 2004-12-21 | 2006-11-01 | 삼성전자주식회사 | 매몰 게이트 패턴을 포함하는 전계 효과 트랜지스터구조물 및 그것을 포함하는 반도체 소자의 제조방법 |
US7279406B2 (en) * | 2004-12-22 | 2007-10-09 | Texas Instruments Incorporated | Tailoring channel strain profile by recessed material composition control |
US7335959B2 (en) * | 2005-01-06 | 2008-02-26 | Intel Corporation | Device with stepped source/drain region profile |
US7282415B2 (en) | 2005-03-29 | 2007-10-16 | Freescale Semiconductor, Inc. | Method for making a semiconductor device with strain enhancement |
WO2006103321A1 (fr) * | 2005-04-01 | 2006-10-05 | Stmicroelectronics (Crolles 2) Sas | Transistor pmos a canal contraint et procede de fabrication correspondant |
JP2006332243A (ja) * | 2005-05-25 | 2006-12-07 | Toshiba Corp | 半導体装置及びその製造方法 |
US7858481B2 (en) * | 2005-06-15 | 2010-12-28 | Intel Corporation | Method for fabricating transistor with thinned channel |
FR2887370B1 (fr) | 2005-06-17 | 2007-12-28 | Commissariat Energie Atomique | Procede de fabrication d'un transistor isole a canal contraint |
EP1739749A2 (fr) * | 2005-06-30 | 2007-01-03 | STMicroelectronics (Crolles 2) SAS | Cellule mémoire à un transistor MOS à corps isolé à effet mémoire prolongé |
US7326601B2 (en) * | 2005-09-26 | 2008-02-05 | Advanced Micro Devices, Inc. | Methods for fabrication of a stressed MOS device |
WO2007053382A1 (fr) * | 2005-10-31 | 2007-05-10 | Advanced Micro Devices, Inc. | Couche de contrainte incorporée dans des transistors soi minces et son procédé de fabrication |
DE102005052055B3 (de) * | 2005-10-31 | 2007-04-26 | Advanced Micro Devices, Inc., Sunnyvale | Eingebettete Verformungsschicht in dünnen SOI-Transistoren und Verfahren zur Herstellung desselben |
FR2897202B1 (fr) * | 2006-02-08 | 2008-09-12 | St Microelectronics Crolles 2 | Transistor mos a barriere de schottky sur film semi-conducteur entierement appauvri et procede de fabrication d'un tel transistor. |
DE602006019940D1 (de) * | 2006-03-06 | 2011-03-17 | St Microelectronics Crolles 2 | Herstellung eines flachen leitenden Kanals aus SiGe |
FR2899381B1 (fr) * | 2006-03-28 | 2008-07-18 | Commissariat Energie Atomique | Procede de realisation d'un transistor a effet de champ a grilles auto-alignees |
JP5055846B2 (ja) * | 2006-06-09 | 2012-10-24 | ソニー株式会社 | 半導体装置およびその製造方法 |
US7541239B2 (en) * | 2006-06-30 | 2009-06-02 | Intel Corporation | Selective spacer formation on transistors of different classes on the same device |
KR100746232B1 (ko) * | 2006-08-25 | 2007-08-03 | 삼성전자주식회사 | 스트레인드 채널을 갖는 모스 트랜지스터 및 그 제조방법 |
US7670896B2 (en) * | 2006-11-16 | 2010-03-02 | International Business Machines Corporation | Method and structure for reducing floating body effects in MOSFET devices |
US8232186B2 (en) * | 2008-05-29 | 2012-07-31 | International Business Machines Corporation | Methods of integrating reverse eSiGe on NFET and SiGe channel on PFET, and related structure |
FR2976401A1 (fr) * | 2011-06-07 | 2012-12-14 | St Microelectronics Crolles 2 | Composant electronique comportant un ensemble de transistors mosfet et procede de fabrication |
FR2985089B1 (fr) * | 2011-12-27 | 2015-12-04 | Commissariat Energie Atomique | Transistor et procede de fabrication d'un transistor |
CN103578987B (zh) * | 2012-07-19 | 2016-08-24 | 中国科学院微电子研究所 | 半导体器件及其制造方法 |
CN104779203B (zh) * | 2015-04-23 | 2017-11-28 | 京东方科技集团股份有限公司 | 一种阵列基板及其制造方法、显示装置 |
US9685535B1 (en) | 2016-09-09 | 2017-06-20 | International Business Machines Corporation | Conductive contacts in semiconductor on insulator substrate |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06120490A (ja) * | 1992-10-06 | 1994-04-28 | Hitachi Ltd | 半導体装置及びその製造方法 |
JP3376211B2 (ja) * | 1996-05-29 | 2003-02-10 | 株式会社東芝 | 半導体装置、半導体基板の製造方法及び半導体装置の製造方法 |
FR2791180B1 (fr) * | 1999-03-19 | 2001-06-15 | France Telecom | Dispositif semi-conducteur a courant de fuite reduit et son procede de fabrication |
US6326667B1 (en) * | 1999-09-09 | 2001-12-04 | Kabushiki Kaisha Toshiba | Semiconductor devices and methods for producing semiconductor devices |
WO2001054202A1 (fr) * | 2000-01-20 | 2001-07-26 | Amberwave Systems Corporation | Transistors a effet de champ, a semi-conducteur metal-oxyde, et a couche de silicium contrainte |
FR2812764B1 (fr) * | 2000-08-02 | 2003-01-24 | St Microelectronics Sa | Procede de fabrication d'un substrat de type substrat-sur- isolant ou substrat-sur-vide et dispositif obtenu |
FR2821483B1 (fr) * | 2001-02-28 | 2004-07-09 | St Microelectronics Sa | Procede de fabrication d'un transistor a grille isolee et a architecture du type substrat sur isolant, et transistor correspondant |
US6515335B1 (en) * | 2002-01-04 | 2003-02-04 | International Business Machines Corporation | Method for fabrication of relaxed SiGe buffer layers on silicon-on-insulators and structures containing the same |
-
2002
- 2002-04-03 FR FR0204165A patent/FR2838237B1/fr not_active Expired - Fee Related
-
2003
- 2003-03-31 US US10/405,075 patent/US6989570B2/en not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7700951B2 (en) | 2003-11-05 | 2010-04-20 | International Business Machines Corporation | Method and structure for forming strained Si for CMOS devices |
US7928443B2 (en) | 2003-11-05 | 2011-04-19 | International Business Machines Corporation | Method and structure for forming strained SI for CMOS devices |
Also Published As
Publication number | Publication date |
---|---|
US20040188760A1 (en) | 2004-09-30 |
FR2838237A1 (fr) | 2003-10-10 |
US6989570B2 (en) | 2006-01-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20081231 |