FR2824666B1 - Transistor bipolaire a fonctionnement lateral et procede de fabrication correspondant - Google Patents

Transistor bipolaire a fonctionnement lateral et procede de fabrication correspondant

Info

Publication number
FR2824666B1
FR2824666B1 FR0106141A FR0106141A FR2824666B1 FR 2824666 B1 FR2824666 B1 FR 2824666B1 FR 0106141 A FR0106141 A FR 0106141A FR 0106141 A FR0106141 A FR 0106141A FR 2824666 B1 FR2824666 B1 FR 2824666B1
Authority
FR
France
Prior art keywords
manufacturing
bipolar transistor
lateral operation
lateral
bipolar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0106141A
Other languages
English (en)
Other versions
FR2824666A1 (fr
Inventor
Olivier Menut
Herve Jaouen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR0106141A priority Critical patent/FR2824666B1/fr
Priority to US10/142,249 priority patent/US6897545B2/en
Publication of FR2824666A1 publication Critical patent/FR2824666A1/fr
Application granted granted Critical
Publication of FR2824666B1 publication Critical patent/FR2824666B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1012—Base regions of thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642—Isolation within the component, i.e. internal isolation
    • H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642—Isolation within the component, i.e. internal isolation
    • H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
    • H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1004—Base region of bipolar transistors
    • H01L29/1008—Base region of bipolar transistors of lateral transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/6625—Lateral transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/735—Lateral transistors
FR0106141A 2001-05-09 2001-05-09 Transistor bipolaire a fonctionnement lateral et procede de fabrication correspondant Expired - Fee Related FR2824666B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0106141A FR2824666B1 (fr) 2001-05-09 2001-05-09 Transistor bipolaire a fonctionnement lateral et procede de fabrication correspondant
US10/142,249 US6897545B2 (en) 2001-05-09 2002-05-09 Lateral operation bipolar transistor and a corresponding fabrication process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0106141A FR2824666B1 (fr) 2001-05-09 2001-05-09 Transistor bipolaire a fonctionnement lateral et procede de fabrication correspondant

Publications (2)

Publication Number Publication Date
FR2824666A1 FR2824666A1 (fr) 2002-11-15
FR2824666B1 true FR2824666B1 (fr) 2003-10-24

Family

ID=8863091

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0106141A Expired - Fee Related FR2824666B1 (fr) 2001-05-09 2001-05-09 Transistor bipolaire a fonctionnement lateral et procede de fabrication correspondant

Country Status (2)

Country Link
US (1) US6897545B2 (fr)
FR (1) FR2824666B1 (fr)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6908824B2 (en) * 2003-11-06 2005-06-21 Chartered Semiconductor Manufacturing Ltd. Self-aligned lateral heterojunction bipolar transistor
US6972237B2 (en) * 2003-12-01 2005-12-06 Chartered Semiconductor Manufacturing Ltd. Lateral heterojunction bipolar transistor and method of manufacture using selective epitaxial growth
US7230312B2 (en) * 2003-12-31 2007-06-12 Micron Technology, Inc. Transistor having vertical junction edge and method of manufacturing the same
US7494887B1 (en) * 2004-08-17 2009-02-24 Hrl Laboratories, Llc Method and apparatus for fabricating heterojunction bipolar transistors with simultaneous low base resistance and short base transit time
US8852124B2 (en) * 2006-10-13 2014-10-07 Roche Diagnostics Operations, Inc. Tape transport lance sampler
EP2897171B1 (fr) 2007-12-20 2019-01-30 Sveuciliste U Zagrebu Fakultet Elektrotehnike I Racunarstva Dispositif semi-conducteur comprenant un transistor bipolaire latéral et son procédé de fabrication
US8105911B2 (en) * 2008-09-30 2012-01-31 Northrop Grumman Systems Corporation Bipolar junction transistor guard ring structures and method of fabricating thereof
US8441084B2 (en) * 2011-03-15 2013-05-14 International Business Machines Corporation Horizontal polysilicon-germanium heterojunction bipolar transistor
US8492794B2 (en) 2011-03-15 2013-07-23 International Business Machines Corporation Vertical polysilicon-germanium heterojunction bipolar transistor
CN103000676B (zh) * 2012-12-12 2015-05-27 清华大学 侧向双极晶体管及其制备方法
US9059230B1 (en) * 2014-01-10 2015-06-16 International Business Machines Corporation Lateral silicon-on-insulator bipolar junction transistor process and structure
US10900952B2 (en) * 2019-05-16 2021-01-26 International Business Machines Corporation Dual surface charge sensing biosensor
US11462632B2 (en) 2020-12-22 2022-10-04 Globalfoundries U.S. Inc. Lateral bipolar junction transistor device and method of making such a device
US11424349B1 (en) * 2021-02-17 2022-08-23 Globalfoundries U.S. Inc. Extended shallow trench isolation for ultra-low leakage in fin-type lateral bipolar junction transistor devices

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4897703A (en) * 1988-01-29 1990-01-30 Texas Instruments Incorporated Recessed contact bipolar transistor and method
JPH0785477B2 (ja) * 1992-01-24 1995-09-13 インターナショナル・ビジネス・マシーンズ・コーポレイション ポリシリコンのエミッタを有するｓｏｉ横型バイポーラ・トランジスタ、及びその製造方法
KR100292330B1 (ko) * 1992-05-01 2001-09-17 이데이 노부유끼 반도체장치와그제조방법및실리콘절연기판의제조방법
US5422502A (en) * 1993-12-09 1995-06-06 Northern Telecom Limited Lateral bipolar transistor
US5494837A (en) * 1994-09-27 1996-02-27 Purdue Research Foundation Method of forming semiconductor-on-insulator electronic devices by growing monocrystalline semiconducting regions from trench sidewalls
FR2728388A1 (fr) * 1994-12-19 1996-06-21 Korea Electronics Telecomm Procede de fabrication d'un transistor bipolaire
JPH1032274A (ja) * 1996-04-12 1998-02-03 Texas Instr Inc <Ti> Ｃｍｏｓプロセスによるバイポーラートランジスタ作製方法
US5994162A (en) * 1998-02-05 1999-11-30 International Business Machines Corporation Integrated circuit-compatible photo detector device and fabrication process
KR100270965B1 (ko) * 1998-11-07 2000-12-01 윤종용 고속 바이폴라 트랜지스터 및 그 제조방법
US6670255B2 (en) * 2001-09-27 2003-12-30 International Business Machines Corporation Method of fabricating lateral diodes and bipolar transistors

Also Published As

Publication number Publication date
US6897545B2 (en) 2005-05-24
US20030025125A1 (en) 2003-02-06
FR2824666A1 (fr) 2002-11-15

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Effective date: 20080131