FR2848726B1 - Transistor mis a grille auto-alignee et son procede de fabrication - Google Patents
Transistor mis a grille auto-alignee et son procede de fabricationInfo
- Publication number
- FR2848726B1 FR2848726B1 FR0215916A FR0215916A FR2848726B1 FR 2848726 B1 FR2848726 B1 FR 2848726B1 FR 0215916 A FR0215916 A FR 0215916A FR 0215916 A FR0215916 A FR 0215916A FR 2848726 B1 FR2848726 B1 FR 2848726B1
- Authority
- FR
- France
- Prior art keywords
- self
- manufacturing
- same
- grid transistor
- aligned grid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28238—Making the insulator with sacrificial oxide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28114—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor characterised by the sectional shape, e.g. T, inverted-T
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66545—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66613—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation
- H01L29/66628—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation recessing the gate by forming single crystalline semiconductor material at the source or drain location
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7834—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with a non-planar structure, e.g. the gate or the source or the drain being non-planar
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0215916A FR2848726B1 (fr) | 2002-12-16 | 2002-12-16 | Transistor mis a grille auto-alignee et son procede de fabrication |
EP03809986A EP1573793A2 (fr) | 2002-12-16 | 2003-12-15 | Transistor mis a grille auto-alignee et son procede de fabrication |
PCT/FR2003/050173 WO2004057658A2 (fr) | 2002-12-16 | 2003-12-15 | Transistor mis a grille auto-alignee et son procede de fabrication |
US10/539,928 US20070001239A1 (en) | 2002-12-16 | 2003-12-15 | Mis transistor with self-aligned gate and method for making same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0215916A FR2848726B1 (fr) | 2002-12-16 | 2002-12-16 | Transistor mis a grille auto-alignee et son procede de fabrication |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2848726A1 FR2848726A1 (fr) | 2004-06-18 |
FR2848726B1 true FR2848726B1 (fr) | 2005-11-04 |
Family
ID=32338828
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0215916A Expired - Fee Related FR2848726B1 (fr) | 2002-12-16 | 2002-12-16 | Transistor mis a grille auto-alignee et son procede de fabrication |
Country Status (4)
Country | Link |
---|---|
US (1) | US20070001239A1 (fr) |
EP (1) | EP1573793A2 (fr) |
FR (1) | FR2848726B1 (fr) |
WO (1) | WO2004057658A2 (fr) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8698230B2 (en) * | 2012-02-22 | 2014-04-15 | Eastman Kodak Company | Circuit including vertical transistors with a conductive stack having reentrant profile |
JP5944285B2 (ja) | 2012-09-18 | 2016-07-05 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
US9000539B2 (en) * | 2012-11-08 | 2015-04-07 | Texas Instruments Incorporated | Metal-gate MOS transistor and method of forming the transistor with reduced gate-to-source and gate-to-drain overlap capacitance |
US10734498B1 (en) * | 2017-10-12 | 2020-08-04 | Hrl Laboratories, Llc | Method of making a dual-gate HEMT |
EP3753051A4 (fr) | 2018-02-14 | 2021-11-17 | Hrl Laboratories, Llc | Structures hemt au gan linéaires très échelonnées |
US11404541B2 (en) | 2018-02-14 | 2022-08-02 | Hrl Laboratories, Llc | Binary III-nitride 3DEG heterostructure HEMT with graded channel for high linearity and high power applications |
TWI736300B (zh) * | 2020-06-01 | 2021-08-11 | 國立陽明交通大學 | 射頻積體電路及其製造方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5289030A (en) * | 1991-03-06 | 1994-02-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with oxide layer |
FR2757312B1 (fr) * | 1996-12-16 | 1999-01-08 | Commissariat Energie Atomique | Transistor mis a grille metallique auto-alignee et son procede de fabrication |
JP3544833B2 (ja) * | 1997-09-18 | 2004-07-21 | 株式会社東芝 | 半導体装置及びその製造方法 |
US6127233A (en) * | 1997-12-05 | 2000-10-03 | Texas Instruments Incorporated | Lateral MOSFET having a barrier between the source/drain regions and the channel region |
US6180978B1 (en) * | 1997-12-30 | 2001-01-30 | Texas Instruments Incorporated | Disposable gate/replacement gate MOSFETs for sub-0.1 micron gate length and ultra-shallow junctions |
US5994191A (en) * | 1998-07-09 | 1999-11-30 | Advanced Micro Devices, Inc. | Elevated source/drain salicide CMOS technology |
US6077733A (en) * | 1999-09-03 | 2000-06-20 | Taiwan Semiconductor Manufacturing Company | Method of manufacturing self-aligned T-shaped gate through dual damascene |
JP2002026310A (ja) * | 2000-06-30 | 2002-01-25 | Toshiba Corp | 半導体装置及びその製造方法 |
JP4447128B2 (ja) * | 2000-07-12 | 2010-04-07 | 富士通マイクロエレクトロニクス株式会社 | 絶縁ゲート型半導体装置の製造方法 |
KR100342306B1 (ko) * | 2000-09-05 | 2002-07-02 | 윤종용 | 트랜지스터 및 이의 형성 방법 |
KR100398874B1 (ko) * | 2001-11-21 | 2003-09-19 | 삼성전자주식회사 | 티자형의 게이트 전극을 갖는 모스 트랜지스터 및 그 제조방법 |
US6452229B1 (en) * | 2002-02-21 | 2002-09-17 | Advanced Micro Devices, Inc. | Ultra-thin fully depleted SOI device with T-shaped gate and method of fabrication |
-
2002
- 2002-12-16 FR FR0215916A patent/FR2848726B1/fr not_active Expired - Fee Related
-
2003
- 2003-12-15 WO PCT/FR2003/050173 patent/WO2004057658A2/fr active Application Filing
- 2003-12-15 EP EP03809986A patent/EP1573793A2/fr not_active Withdrawn
- 2003-12-15 US US10/539,928 patent/US20070001239A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US20070001239A1 (en) | 2007-01-04 |
WO2004057658A3 (fr) | 2004-08-19 |
FR2848726A1 (fr) | 2004-06-18 |
WO2004057658A2 (fr) | 2004-07-08 |
EP1573793A2 (fr) | 2005-09-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR2852734B1 (fr) | Transistor ayant une structure sonos a grille encocheee et procede de fabrication | |
FR2816109B1 (fr) | Circuit integre a transistor a grille isolee et procede de fabrication | |
FR2841631B1 (fr) | Structure de raccord de tuyau et son procede de fabrication | |
FR2757312B1 (fr) | Transistor mis a grille metallique auto-alignee et son procede de fabrication | |
FR2822293B1 (fr) | Transistor a effet de champ et double grille, circuit integre comportant ce transistor, et procede de fabrication de ce dernier | |
FR2792458B1 (fr) | Dispositif a semi-conducteur et son procede de fabrication | |
FR2886761B1 (fr) | Transistor a canal a base de germanium enrobe par une electrode de grille et procede de fabrication d'un tel transistor | |
FR2873492B1 (fr) | Nanocomposite photoactif et son procede de fabrication | |
FR2838237B1 (fr) | Procede de fabrication d'un transistor a effet de champ a grille isolee a canal contraint et circuit integre comprenant un tel transistor | |
FR2891664B1 (fr) | Transistor mos vertical et procede de fabrication | |
FR2798219B1 (fr) | Inductance et procede de fabrication | |
FR2864706B1 (fr) | Dispositif electrolumninescent organique et son procede de fabrication | |
HK1083041A1 (en) | Method for fabricating a self-aligned bipolar transistor and related structure | |
FR2842443B1 (fr) | Plaque metallique, son procede de fabrication et son procede de pliage | |
FR2824666B1 (fr) | Transistor bipolaire a fonctionnement lateral et procede de fabrication correspondant | |
FR2853134B1 (fr) | Procede de fabrication d'un transistor a grille metallique, et transistor correspondant | |
FR2848726B1 (fr) | Transistor mis a grille auto-alignee et son procede de fabrication | |
FR2810792B1 (fr) | Transistor mos vertical a grille enterree et procede de fabrication de celui-ci | |
FR2834922B1 (fr) | Procede de fabrication d'un element structurel et element prevu par ledit procede | |
FR2801650B1 (fr) | Ensemble a boulon et agrafe de retenue, et son procede de fabrication | |
FR2864199B1 (fr) | Conduit a attenuateurs acoustiques integres et son procede fabrication | |
FR2852146B1 (fr) | Imageur x a conversion directe et son procede de fabrication | |
FR2872836B1 (fr) | Geocomposite de drainage et son procede de fabrication | |
FR2774812B1 (fr) | Procede de fabrication de transistors mos a deux tensions | |
FR2840453B1 (fr) | Procede de fabrication d'un transistor mos de longueur de grille reduite, et circuit integre comportant un tel transistor |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20130830 |