FR2873492B1 - Nanocomposite photoactif et son procede de fabrication - Google Patents

Nanocomposite photoactif et son procede de fabrication

Info

Publication number
FR2873492B1
FR2873492B1 FR0451607A FR0451607A FR2873492B1 FR 2873492 B1 FR2873492 B1 FR 2873492B1 FR 0451607 A FR0451607 A FR 0451607A FR 0451607 A FR0451607 A FR 0451607A FR 2873492 B1 FR2873492 B1 FR 2873492B1
Authority
FR
France
Prior art keywords
manufacturing
same
photoactive nanocomposite
nanocomposite
photoactive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0451607A
Other languages
English (en)
Other versions
FR2873492A1 (fr
Inventor
Muriel Firon
Bernard Drevillon
I Morral Anna Fonctcuberta
Serge Palacin
I Cabaroccas Pere Roca
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR0451607A priority Critical patent/FR2873492B1/fr
Priority to JP2007521999A priority patent/JP2008507146A/ja
Priority to EP05792198A priority patent/EP1774605A1/fr
Priority to US11/658,041 priority patent/US7713779B2/en
Priority to PCT/FR2005/050605 priority patent/WO2006018575A1/fr
Publication of FR2873492A1 publication Critical patent/FR2873492A1/fr
Application granted granted Critical
Publication of FR2873492B1 publication Critical patent/FR2873492B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H10K30/35—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles
    • H10K30/352—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles the inorganic nanostructures being nanotubes or nanowires, e.g. CdTe nanotubes in P3HT polymer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/30—Doping active layers, e.g. electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electromagnetism (AREA)
  • Composite Materials (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Photovoltaic Devices (AREA)
FR0451607A 2004-07-21 2004-07-21 Nanocomposite photoactif et son procede de fabrication Expired - Fee Related FR2873492B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR0451607A FR2873492B1 (fr) 2004-07-21 2004-07-21 Nanocomposite photoactif et son procede de fabrication
JP2007521999A JP2008507146A (ja) 2004-07-21 2005-07-21 光活性ナノコンポジットおよびその製造方法
EP05792198A EP1774605A1 (fr) 2004-07-21 2005-07-21 Nanocomposite photoactif et son procede de fabrication
US11/658,041 US7713779B2 (en) 2004-07-21 2005-07-21 Photoactive nanocomposite and method for the production thereof
PCT/FR2005/050605 WO2006018575A1 (fr) 2004-07-21 2005-07-21 Nanocomposite photoactif et son procede de fabrication

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0451607A FR2873492B1 (fr) 2004-07-21 2004-07-21 Nanocomposite photoactif et son procede de fabrication

Publications (2)

Publication Number Publication Date
FR2873492A1 FR2873492A1 (fr) 2006-01-27
FR2873492B1 true FR2873492B1 (fr) 2006-11-24

Family

ID=34946399

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0451607A Expired - Fee Related FR2873492B1 (fr) 2004-07-21 2004-07-21 Nanocomposite photoactif et son procede de fabrication

Country Status (5)

Country Link
US (1) US7713779B2 (fr)
EP (1) EP1774605A1 (fr)
JP (1) JP2008507146A (fr)
FR (1) FR2873492B1 (fr)
WO (1) WO2006018575A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
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RU2462793C2 (ru) * 2007-12-28 2012-09-27 Юниверсите Де Ля Медитерране Экс-Марсель Ii Гибридные нанокомпозиционные материалы

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SI2022108T1 (sl) 2006-05-01 2009-10-31 Univ Wake Forest Organske optoelektronske naprave in uporabe le-teh
US7741647B2 (en) 2006-05-22 2010-06-22 Hewlett-Packard Development Company Utilizing nanowire for different applications
US20080149178A1 (en) * 2006-06-27 2008-06-26 Marisol Reyes-Reyes Composite organic materials and applications thereof
ATE528803T1 (de) 2006-08-07 2011-10-15 Univ Wake Forest Herstellung von organischen verbundmaterialien
DE102006041534A1 (de) * 2006-09-05 2008-03-13 Siemens Ag Transparente Elektrode und Verwendung davon sowie daraus hergestellte organische elektronische Vorrichtungen
FR2921759B1 (fr) * 2007-09-27 2010-01-01 Commissariat Energie Atomique Matrices hybrides pour transistors a couches minces
AU2007363281B2 (en) * 2007-12-28 2014-07-10 Centre National De La Recherche Scientifique (C.N.R.S.) Hybrid nanocomposite
US8269985B2 (en) 2009-05-26 2012-09-18 Zena Technologies, Inc. Determination of optimal diameters for nanowires
US8507840B2 (en) 2010-12-21 2013-08-13 Zena Technologies, Inc. Vertically structured passive pixel arrays and methods for fabricating the same
US8748799B2 (en) 2010-12-14 2014-06-10 Zena Technologies, Inc. Full color single pixel including doublet or quadruplet si nanowires for image sensors
US9000353B2 (en) 2010-06-22 2015-04-07 President And Fellows Of Harvard College Light absorption and filtering properties of vertically oriented semiconductor nano wires
US20110115041A1 (en) * 2009-11-19 2011-05-19 Zena Technologies, Inc. Nanowire core-shell light pipes
US8274039B2 (en) 2008-11-13 2012-09-25 Zena Technologies, Inc. Vertical waveguides with various functionality on integrated circuits
US8835831B2 (en) 2010-06-22 2014-09-16 Zena Technologies, Inc. Polarized light detecting device and fabrication methods of the same
US8546742B2 (en) 2009-06-04 2013-10-01 Zena Technologies, Inc. Array of nanowires in a single cavity with anti-reflective coating on substrate
US8866065B2 (en) 2010-12-13 2014-10-21 Zena Technologies, Inc. Nanowire arrays comprising fluorescent nanowires
US8519379B2 (en) 2009-12-08 2013-08-27 Zena Technologies, Inc. Nanowire structured photodiode with a surrounding epitaxially grown P or N layer
US8384007B2 (en) * 2009-10-07 2013-02-26 Zena Technologies, Inc. Nano wire based passive pixel image sensor
US8791470B2 (en) 2009-10-05 2014-07-29 Zena Technologies, Inc. Nano structured LEDs
US9478685B2 (en) 2014-06-23 2016-10-25 Zena Technologies, Inc. Vertical pillar structured infrared detector and fabrication method for the same
US9515218B2 (en) 2008-09-04 2016-12-06 Zena Technologies, Inc. Vertical pillar structured photovoltaic devices with mirrors and optical claddings
US9406709B2 (en) 2010-06-22 2016-08-02 President And Fellows Of Harvard College Methods for fabricating and using nanowires
US8229255B2 (en) 2008-09-04 2012-07-24 Zena Technologies, Inc. Optical waveguides in image sensors
US8735797B2 (en) 2009-12-08 2014-05-27 Zena Technologies, Inc. Nanowire photo-detector grown on a back-side illuminated image sensor
US9343490B2 (en) 2013-08-09 2016-05-17 Zena Technologies, Inc. Nanowire structured color filter arrays and fabrication method of the same
US9299866B2 (en) 2010-12-30 2016-03-29 Zena Technologies, Inc. Nanowire array based solar energy harvesting device
US9082673B2 (en) 2009-10-05 2015-07-14 Zena Technologies, Inc. Passivated upstanding nanostructures and methods of making the same
US8890271B2 (en) 2010-06-30 2014-11-18 Zena Technologies, Inc. Silicon nitride light pipes for image sensors
US8889455B2 (en) * 2009-12-08 2014-11-18 Zena Technologies, Inc. Manufacturing nanowire photo-detector grown on a back-side illuminated image sensor
US20100304061A1 (en) * 2009-05-26 2010-12-02 Zena Technologies, Inc. Fabrication of high aspect ratio features in a glass layer by etching
US8299472B2 (en) 2009-12-08 2012-10-30 Young-June Yu Active pixel sensor with nanowire structured photodetectors
JP4368934B1 (ja) 2009-02-09 2009-11-18 アイランド ジャイアント デベロップメント エルエルピー 液体収容システム、液体収容容器、および液体導出制御方法
KR101230401B1 (ko) * 2011-03-02 2013-02-07 한국화학연구원 무기 반도체 감응형 광전소자
US9416456B1 (en) 2011-05-20 2016-08-16 University Of South Florida Nano-hybrid structured regioregular polyhexylthiophene (RRPHTh) blend films for production of photoelectrochemical energy
KR101316375B1 (ko) * 2011-08-19 2013-10-08 포항공과대학교 산학협력단 태양전지 및 이의 제조방법
CN107068871A (zh) 2013-03-11 2017-08-18 沙特基础工业公司 平面供体‑受体异质结及包含其的光伏电池
CN105026406A (zh) 2013-03-11 2015-11-04 沙特基础工业公司 第ⅲ族金属的芳氧基-酞菁
CN103681962B (zh) * 2013-11-21 2016-02-17 中国科学院上海技术物理研究所 基于竖直排列半导体纳米线的光电探测器制备方法
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CN104733616A (zh) * 2013-12-24 2015-06-24 香港城市大学 一种太阳能电池及其制备方法
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Publication number Priority date Publication date Assignee Title
RU2462793C2 (ru) * 2007-12-28 2012-09-27 Юниверсите Де Ля Медитерране Экс-Марсель Ii Гибридные нанокомпозиционные материалы

Also Published As

Publication number Publication date
US20070290197A1 (en) 2007-12-20
JP2008507146A (ja) 2008-03-06
EP1774605A1 (fr) 2007-04-18
WO2006018575A1 (fr) 2006-02-23
FR2873492A1 (fr) 2006-01-27
US7713779B2 (en) 2010-05-11

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Effective date: 20140331